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    검사 방법 및 장치, 검사 방법 및 장치에서 사용되는 기판, 및 디바이스 제조 방법
    1.
    发明公开
    검사 방법 및 장치, 검사 방법 및 장치에서 사용되는 기판, 및 디바이스 제조 방법 审中-公开
    检查方法和装置基板及其使用方法和装置制造方法

    公开(公告)号：KR20180019783A

    公开(公告)日：2018-02-26

    申请号：KR20187004695

    申请日：2014-05-02

    Applicant: ASML NETHERLANDS BV

    Inventor： BOGAART ERIK ,  BIJNEN FRANCISCUS ,  DEN BOEF ARIE ,  MATHIJSSEN SIMON GIJSBERT JOSEPHUS

    IPC: G03F7/20 ,  G01N21/65 ,  G01N21/95 ,  G01N21/956 ,  H01L21/66

    CPC classification number: G03F7/70483 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/656 ,  G03F7/70625

    Abstract: 기판에는디바이스구조물및 계측구조물(800)이제공된다. 디바이스구조물은하나이상의파장의여기방사선의비탄성산란을나타내는재료를포함한다. 디바이스구조물은하나이상의치수에서충분히작아서비탄성산란의특성이양자구속에의하여크게영향받게하는구조를포함한다. 계측구조물(800)은조성및 치수에있어서디바이스피쳐와유사한디바이스-유사구조물(800b), 및교정구조물(800a)을포함한다. 교정구조물은조성에있어서디바이스피쳐와유사하지만적어도하나의치수에있어서상이하다. 라만분광을구현하는검사장치및 방법을사용하면, 디바이스-유사구조물의치수는디바이스-유사구조물및 교정구조물로부터비탄성적으로산란된방사선의스펙트럼피쳐를비교함으로써측정될수 있다.

    Abstract translation: 衬底配备有器件结构和度量结构（800）。 器件结构包括显示一个或多个波长的激发辐射的非弹性散射的材料。 器件结构包括在一个或多个维度上足够小的结构，非弹性散射的特性受量子限制的显着影响。 度量结构（800）包括类似于器件特征和校准结构（800a）的组成和尺寸的器件状结构（800b）。 校准结构与组成装置中的装置特征类似，但在至少一个维度上不同。 使用实施拉曼光谱学的检查设备和方法，可以通过比较来自类似装置的结构和校准结构的非弹性散射辐射的光谱特征来测量装置状结构的尺寸。

    A METHOD TO DETERMINE THE USEFULNESS OF ALIGNMENT MARKS TO CORRECT OVERLAY, AND A COMBINATION OF A LITHOGRAPHIC APPARATUS AND AN OVERLAY MEASUREMENT SYSTEM
    2.
    发明申请
    A METHOD TO DETERMINE THE USEFULNESS OF ALIGNMENT MARKS TO CORRECT OVERLAY, AND A COMBINATION OF A LITHOGRAPHIC APPARATUS AND AN OVERLAY MEASUREMENT SYSTEM 审中-公开
    确定对准标记的有效性以校正重叠的方法，以及地平线设备和叠加测量系统的组合

    公开(公告)号：WO2013178404A3

    公开(公告)日：2014-03-20

    申请号：PCT/EP2013058375

    申请日：2013-04-23

    Applicant: ASML NETHERLANDS BV

    Inventor： LYULINA IRINA ,  BIJNEN FRANCISCUS ,  EDART REMI ,  KIERS ANTOINE ,  KUBIS MICHAEL

    IPC: G03F9/00 ,  G03F7/20

    CPC classification number: G03F7/70141 ,  G01B11/14 ,  G03F7/70633 ,  G03F9/7046

    Abstract: A method to determine the usefulness of an alignment mark of a first pattern in transferring a second pattern to a substrate relative to the first pattern already present on the substrate includes measuring the position of the alignment mark, modeling the position of the alignment mark, determining the model error between measured and modeled position, measuring a corresponding overlay error between first and second pattern and comparing the model error with the overlay error to determine the usefulness of the alignment mark. Subsequently this information can be used when processing next substrates thereby improving the overlay for these substrates. A lithographic apparatus and/or overlay measurement system may be operated in accordance with the method.

    Abstract translation: 确定第一图案的对准标记在基板上相对于已经存在于基板上的第一图案的第二图案的有用性的方法包括测量对准标记的位置，对对准标记的位置进行建模，确定 测量和建模位置之间的模型误差，测量第一和第二模式之间的对应覆盖误差，并将模型误差与覆盖误差进行比较，以确定对准标记的有用性。 随后，当处理下一个基板时，可以使用该信息，从而改善这些基板的覆盖层。 可以根据该方法操作光刻设备和/或覆盖测量系统。

    ALIGNMENT MEASUREMENT ARRANGEMENT, ALIGNMENT MEASUREMENT METHOD, DEVICE MANUFACTURING METHOD AND LITHOGRAPHIC APPARATUS.
    5.
    发明专利
    ALIGNMENT MEASUREMENT ARRANGEMENT, ALIGNMENT MEASUREMENT METHOD, DEVICE MANUFACTURING METHOD AND LITHOGRAPHIC APPARATUS. 未知

    公开(公告)号：NL2004216A

    公开(公告)日：2010-09-28

    申请号：NL2004216

    申请日：2010-02-10

    Applicant: ASML NETHERLANDS BV

    Inventor： BIJNEN FRANCISCUS ,  HAREN RICHARD ,  WEI XIUHONG

    IPC: G03F9/00

    Abstract: An alignment measurement arrangement includes a source, an optical system and a detector. The source generates a radiation beam with a plurality of wavelength ranges. The optical system receives the radiation beam, produces an alignment beam, directs the alignment beam to a mark located on an object, receives alignment radiation back from the mark, and transmits the received radiation. The detector receives the alignment radiation and detects an image of the alignment mark and outputs a plurality of alignment signals, r, each associated with one of the wavelength ranges. A processor, in communication with the detector, receives the alignment signals, determines signal qualities of the alignment signals; determines aligned positions of the alignment signals, and calculates a position of the alignment mark based on the signal qualities, aligned positions, and a model relating the aligned position to the range of wavelengths and mark characteristics, including mark depth and mark asymmetry.

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