Abstract:
A method and apparatus for analyzing an input electron microscope image of a first area on a first wafer are disclosed. The method comprises obtaining a plurality of mode images from the input electron microscope image corresponding to a plurality of interpretable modes. The method further comprises evaluating the plurality of mode images, and determining, based on evaluation results, contributions from the plurality of interpretable modes to the input electron microscope image. The method also comprises predicting one or more characteristics in the first area on the first wafer based on the determined contributions. In some embodiments, a method and apparatus for performing an automatic root cause analysis based on an input electron microscope image of a wafer are also disclosed.
Abstract:
A lithographic apparatus including an optical column to project a beam on a target portion of a substrate is disclosed, the optical column having a projection system configured to project the beam onto the target portion. The apparatus further includes an actuator to move the optical column or at least part thereof with respect to the substrate and a window (940) between the moving part of the optical column and the target portion of the substrate and/or between the moving part of the optical column and a non -moving part of the optical column, the window constructed and arranged within the apparatus to reduce or minimize movement of the window.
Abstract:
A target structure (402) such as an alignment mark on a semiconductor substrate (400) becomes obscured by an opaque layer (408) so that it cannot be located by an alignment sensor (AS). A position for the mark is determined using an edge position sensor (412) and relative position information that defines the position of the mark relative to one or more edge portions of the substrate is stored prior to formation of the opaque layer. A window (410) can be opened in the opaque layer, based on the determined position. After revealing the target structure, the alignment sensor can if desired measure more accurately the position of the target structure, for use in controlling further lithographic steps. The edge position sensor may be a camera having an angle-selective behaviour. The edge position sensor may be integrated within the alignment sensor hardware.
Abstract:
A method of controlling a lithographic apparatus having an exposure mode configured to expose a wafer held by a substrate table to an image of a pattern on a production reticle via a projection system, wherein in the exposure mode the production reticle is held at a reticle stage and is protected by a pellicle. The method comprises determining characteristics of the projecting in a calibration mode. The determining comprises moving the reticle stage holding a further reticle protected by a further pellicle, the further reticle having a mark. During the moving the further reticle is illuminated with radiation to form an aerial image of the mark, the aerial image is projected via the projection system onto a sensor and the projected aerial image is sensed as received at the sensor. The characteristics of the sensed aerial image are determined.
Abstract:
A lithographic apparatus comprises an illumination system configured to condition a radiation beam, a support to support a patterning device, a substrate table to hold a substrate; and a projection system to project the patterned radiation beam onto a target portion of the substrate. The support is provided with a transparent layer to protect the pattering device. The apparatus further comprises a transparent layer deformation-determining device to determine a deformation profile of the transparent layer, the deformation profile of the transparent layer expressing a deformation of the transparent layer during a scanning movement of the lithographic apparatus, a compensator device which is configured to control at least one of the projection system, the substrate table and the support in response to the deformation profile of the transparent layer to compensate for the deformation of the transparent layer during the scanning movement of the apparatus.
Abstract:
A patterning device support (1100) for controlling a temperature of a patterning device (1102) can include a movable component (1104). The movable component can include a gas inlet (1108) for supplying a gas flow across a surface of the patterning device and a gas outlet (1110) for extracting the gas flow. The patterning device support can also include a gas flow generator (1118) coupled to a duct (1114, 1116) for recirculating the gas flow from the gas outlet to the gas inlet.
Abstract:
The invention relates to a lithographic apparatus comprising one or more optical columns capable of projecting a beam on a target portion on a substrate held by the substrate support. The one or more optical columns may comprise one or more self-emissive contrast devices to emit the beam. The optical column may comprise a projection system to project the beam onto the target portion. The target portion has a height in a scanning direction of the substrate and a tangential width mainly perpendicular to the scanning direction, wherein a scanning speed of the substrate in the scanning direction divided by the height substantially corresponds with a rotating speed of the optical column or a part thereof divided by the tangential width of the target portion.
Abstract:
A system and method are provided for determining deformation of a patterning device and/or shift position of the patterning device relative. The system includes a first sensing sub-system that measures respective positions of a plurality of reference marks on the patterning device, and a second sensing sub-system that measures positions of the edge of the patterning device relative to the support. The system further includes a controller to determine an absolute position of the patterned portion and change in the absolute position based on measured respective positions of marks on the patterning device, determine a change in a relative position of the edge of the patterned device based on the measured edge positions, and estimate a change in a position of the patterning device relative to the support and a change in a pattern distortion of the patterned portion of the patterning device over a time period.
Abstract:
Systems and methods are disclosed for controlling the heating of a reticle. In one embodiment, a plurality of radiation sources generates a plurality of radiation beams (206) and delivers them to a patterning device (210) that absorbs a portion of the radiation from the beams and develops a spatially dependent heating profile. In a further embodiment, a plurality of resistive heating sources (906) generates heat in response to an applied voltage or current. The generated heat is absorbed by the patterning device from the resistive heating sources and leads to the development of a spatially dependent heating profile. Thermal stresses, strains, and deformations can be controlled by controlling the spatially dependent heating profile.
Abstract:
The invention relates to a lithographic apparatus with a substrate table constructed to hold a substrate and an optical column 924, 930) capable of creating a pattern on a target portion of the substrate. The apparatus has an actuator (928) to move the optical column or part thereof with respect to the substrate. The movement of the optical column or part thereof through a medium causes a heat load on the optical column or part thereof. The apparatus is constructed or operated to reduce the influence of the heat load on the operation of the apparatus.