公开(公告)号：WO2021043936A1

公开(公告)日：2021-03-11

申请号：PCT/EP2020/074663

申请日：2020-09-03

Applicant: ASML NETHERLANDS B.V.

Inventor： KOOIMAN, Marleen ,  PISARENCO, Maxim ,  SLACHTER, Abraham ,  MASLOW, Mark, John ,  OYARZUN RIVERA, Bernardo, Andres ,  TEL, Wim, Tjibbo ,  MAAS, Ruben, Cornelis

IPC: G03F7/20 ,  H01L21/66

Abstract: Described herein is a method of training a model configured to predict whether a feature associated with an imaged substrate will be defective after etching of the imaged substrate and determining etch conditions based on the trained model. The method includes obtaining, via a metrology tool, (i) an after development image of the imaged substrate at a given location, the after development image including a plurality of features, and (ii) an after etch image of the imaged substrate at the given location; and training, using the after development image and the after etch image, the model configured to determine defectiveness of a given feature of the plurality of features in the after development image. In an embodiment, the determining of defectiveness is based on comparing the given feature in the after development image with a corresponding etch feature in the after etch image.

公开(公告)号：WO2019115431A1

公开(公告)日：2019-06-20

申请号：PCT/EP2018/084109

申请日：2018-12-10

Applicant: ASML NETHERLANDS B.V.

Inventor： KOOIMAN, Marleen ,  WUISTER, Sander, Frederik

IPC: G03F7/20 ,  G01N21/956 ,  H01L21/66

Abstract: Disclosed is a method of predicting the dominant failure mode and/or the failure rate of a plurality of features formed on a substrate, and an associated inspection apparatus. The method comprises determining a placement metric for each feature, the placement metric comprising a measure of whether the feature is in an expected position, and comparing a distribution of the placement metric to a reference (e.g., Gaussian) distribution. The placement metric may comprise a boundary metric for a plurality of boundary points on a boundary defining each feature, the boundary metric comprising a measure of whether a boundary point is in an expected position. The dominant failure mode and/or the failure rate of the plurality of features is predicted from the comparison.

公开(公告)号：WO2021165419A1

公开(公告)日：2021-08-26

申请号：PCT/EP2021/054064

申请日：2021-02-18

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN INGEN SCHENAU, Koenraad ,  SLACHTER, Abraham ,  TIMOSHKOV, Vadim Yourievich ,  KOOIMAN, Marleen ,  VAN LARE, Marie-Claire ,  DILLEN, Hermanus, Adrianus ,  HUNSCHE, Stefan ,  COLINA, Luis, Alberto, Colina, Santamaría ,  JIANG, Aiqin ,  WANG, Fuming ,  RAGHUNATHAN, Sudharshanan

IPC: G03F7/20

Abstract: Described herein are methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associated with manufacturing of a chip. A method includes obtaining a plurality of dose-focus settings, and a reference distribution based on measured values of the characteristic of a printed pattern associated with each setting of the plurality of dose-focus settings. The method further includes, based on an adjustment model and the plurality of dose-focus settings, determining the probability density function (PDF) of the characteristic such that an error between the PDF and the reference distribution is reduced. The PDF can be a function of the adjustment model and variance associated with dose, the adjustment model being configured to change a proportion of non-linear dose sensitivity contribution to the PDF. A process window can be adjusted based on the determined PDF of the characteristic.

公开(公告)号：WO2023061678A1

公开(公告)日：2023-04-20

申请号：PCT/EP2022/075369

申请日：2022-09-13

Applicant: ASML NETHERLANDS B.V.

Inventor： KOOIMAN, Marleen ,  VAN BREE, Joost

IPC: G06T7/00 ,  G06T7/37

Abstract: A method of determining offsets between a plurality of data sets, each data set representing a sampling area of a pattern formed on a sample, wherein each sampling area derives from a predetermined portion of a mask pattern, the method comprising: detecting a fingerprint of the mask pattern in noise of the data sets; and determining offsets based on the fingerprint of the mask pattern.

公开(公告)号：WO2022135948A1

公开(公告)日：2022-06-30

申请号：PCT/EP2021/084913

申请日：2021-12-09

Applicant: ASML NETHERLANDS B.V.

Inventor： XU, Huina ,  MATSUSHITA, Yana ,  HASAN, Tanbir ,  KOU, Ren-Jay ,  GOEL, Namita ,  LI, Hongmei ,  PISARENCO, Maxim ,  KOOIMAN, Marleen ,  BATISTAKIS, Chrysostomos ,  ONVLEE, Johannes

IPC: G06T7/00

Abstract: A method and apparatus for analyzing an input electron microscope image of a first area on a first wafer are disclosed. The method comprises obtaining a plurality of mode images from the input electron microscope image corresponding to a plurality of interpretable modes. The method further comprises evaluating the plurality of mode images, and determining, based on evaluation results, contributions from the plurality of interpretable modes to the input electron microscope image. The method also comprises predicting one or more characteristics in the first area on the first wafer based on the determined contributions. In some embodiments, a method and apparatus for performing an automatic root cause analysis based on an input electron microscope image of a wafer are also disclosed.

公开(公告)号：WO2021160523A1

公开(公告)日：2021-08-19

申请号：PCT/EP2021/052726

申请日：2021-02-05

Applicant: ASML NETHERLANDS B.V.

Inventor： KOOIMAN, Marleen

IPC: G03F7/20

Abstract: An image analysis method for identifying features in an image of a part of an array of features formed by a multi-step process, the method comprising: analyzing variations in features visible in the image; and associating features of the image with steps of the multi-step process based at least in part on results of the analyzing.

公开(公告)号：WO2020114752A1

公开(公告)日：2020-06-11

申请号：PCT/EP2019/081426

申请日：2019-11-15

Applicant: ASML NETHERLANDS B.V.

Inventor： KOOIMAN, Marleen

IPC: G03F7/20

Abstract: A method of reducing variability of an error associated with a structure on a wafer in a lithography process is disclosed. The method includes determining, based on an image (or images) obtained based on a scan of the wafer by a scanning electron microscope (SEM), a first error due to a SEM distortion in the image. The method also includes determining, based on the image, a second error associated with a real error of the structure, where the error associated with the structure comprises the first error and the second error. A command is generated by a data processor that enables a modification of the lithography process and an associated reduction of the variability of the error based on reducing any of the first error or the second error.

公开(公告)号：WO2019162275A1

公开(公告)日：2019-08-29

申请号：PCT/EP2019/054098

申请日：2019-02-19

Applicant: ASML NETHERLANDS B.V.

Inventor： KOOIMAN, Marleen

IPC: G03F7/20

Abstract: A method, involving computing a first intensity of a first aerial image and a second intensity of a second aerial image, the first aerial image corresponding to a first location within a resist layer and the second aerial image corresponding to a second location within the resist layer. The method further involves, performing, by a hardware computer system using a resist model, a computer simulation of the resist layer to obtain a value of a parameter for a resist layer feature based on a difference between the first and second intensities or on a difference between a resist model result for the first intensity and a resist model result for the second intensity.

公开(公告)号：WO2019122250A1

公开(公告)日：2019-06-27

申请号：PCT/EP2018/086415

申请日：2018-12-20

Applicant: ASML NETHERLANDS B.V.

Inventor： KOOIMAN, Marleen ,  RIO, David, Marie ,  WUISTER, Sander, Frederik

IPC: G03F7/20

Abstract: Described herein is a method for calibrating a resist model. The method includes the steps of: generating a modeled resist contour of a resist structure based on a simulated aerial image of the resist structure and parameters of the resist model, and predicting a metrology contour of the resist structure from the modeled resist contour based on information of an actual resist structure obtained by a metrology device. The method includes adjusting the parameters of the resist model based on a comparison of the predicted metrology contour and an actual metrology contour of the actual resist structure obtained by the metrology device.

公开(公告)号：EP4163869A1

公开(公告)日：2023-04-12

申请号：EP21202040.8

申请日：2021-10-11

Applicant: ASML Netherlands B.V.

Inventor： KOOIMAN, Marleen

IPC: G06T7/00 ,  G06T7/37

Abstract: A method of determining offsets between a plurality of data sets, each data set representing a sampling area of a pattern formed on a sample, wherein each sampling area derives from a predetermined portion of a mask pattern, the method comprising:
detecting a fingerprint of the mask pattern in noise of the data sets; and
determining offsets based on the fingerprint of the mask pattern.