公开(公告)号：JP2002110080A

公开(公告)日：2002-04-12

申请号：JP2001223304

申请日：2001-07-24

Applicant: AXCELIS TECH INC

Inventor： BIKUTAA MOORISU BENBENISUTE ,  YE JOHN ,  DIVERGILIO WILLIAM FRANK

IPC: G21K5/04 ,  H01J37/05 ,  H01J37/317 ,  H01L21/265 ,  H01P11/00

Abstract: PROBLEM TO BE SOLVED: To provide an ion implantation device, a waveguide and a mass analyzer therefor, and a method of distributing microwave output to a beam guide of the mass analyzer. SOLUTION: The ion implantation device according to the invention comprises a beam guide 200 of mass analysis magnet, a power source for providing electric field, and a magnetic device 170 providing a multicusped magnetic field and having multiple magnets 220. The power source and the magnets 220 interact with each other and cause resonance of an electron cyclotron along a passage. The multicusped magnetic field is superimposed on the dipole field at a specified field strength in the passage of the mass analyzer where it interacts with the electric field of RF or microwaves. The waveguide 250 according to the invention combines the electric field with beam plasma along the passage of the mass analyzer, thereby improving the ECR status. In the invention, beam plasma is enhanced in the dipole field of the mass analyzer for low-energy ion beams, without introducing plasma generated outside.

公开(公告)号：DE60134091D1

公开(公告)日：2008-07-03

申请号：DE60134091

申请日：2001-07-13

Applicant: AXCELIS TECH INC

Inventor： BENVENISTE VICTOR MAURICE ,  YE JOHN ,  DIVERGILIO WILLIAM FRANK

IPC: G21K5/04 ,  H01J37/317 ,  H01J37/02 ,  H01J37/05 ,  H01J37/32 ,  H01L21/265 ,  H01P3/16 ,  H01P11/00

Abstract: An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet (114) mounted in a passageway (139, 202) along the path (129) of an ion beam, a power source (174) adapted to provide an electric field in the passageway (139, 202), and a magnetic device (170) adapted to provide a multi-cusped magnetic field in the passageway (139, 202), which may include a plurality of magnets (220) mounted along at least a portion of the passageway (139, 202). The power source (174) and the magnets (220) may cooperatively interact to provide an electron cyclotron resonance (ECR) condition along at least a portion of the passageway (139, 202). The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway to interact with an electric field of a known RF or microwave frequency for a given low energy ion beam. The invention further comprises a mass analyzer waveguide (250) adapted to couple the electric field to the beam plasma consistently along the length of the mass analyzer passageway (202) to thereby improve the creation of the ECR condition. The invention thus provides enhancement of beam plasma within a mass analyzer dipole magnetic field for low energy ion beams without the introduction of externally generated plasma. The invention further includes a method (300) of providing ion beam containment in a low energy ion implantation system, as well as an ion implantation system.

公开(公告)号：WO2007111822A3

公开(公告)日：2008-04-03

申请号：PCT/US2007006069

申请日：2007-03-09

Applicant: AXCELIS TECH INC ,  WEIGUO QUE ,  HUANG YONGZHANG ,  YE JOHN ,  TAO DAVID ,  SPLINTER PATRICK

Inventor： WEIGUO QUE ,  HUANG YONGZHANG ,  YE JOHN ,  TAO DAVID ,  SPLINTER PATRICK

IPC: H01J37/248 ,  H01J37/24 ,  H01J37/304 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/241 ,  H01J37/248 ,  H01J37/304

Abstract: The present invention is directed to a circuit and method for quickly quenching an arc that may form between high voltage extraction and/or suppression electrodes associated with an ion source of an ion implantation system to shorten the duration of the arc and mitigate non-uniform ion implantations, for example. The circuit and method also facilitates repainting the ion beam over those areas where an arc was detected to recover any dose loss during such arcing. A high voltage high speed switching circuit is added between each high voltage supply and its respective electrode to quickly extinguish the arc which may otherwise substantially discharge a HV capacitor of the supply and disrupt ion beam current which slowly recovers. The high voltage switch is controlled by a trigger circuit which detects voltage or current changes to each electrode. Protection circuits for the HV switch absorb energy from reactive components and clamp any overvoltages to protect the HV switches.

Abstract translation: 本发明涉及用于快速淬灭与离子注入系统的离子源相关的高电压提取和/或抑制电极之间形成的电弧的电路和方法，以缩短电弧的持续时间并减轻非均匀离子 植入例如。 电路和方法还有助于在检测到电弧的那些区域上再次离子束，以在这种电弧过程中恢复任何剂量损失。 在每个高压电源和其各自的电极之间增加一个高电压高速开关电路，以快速熄灭电弧，否则电弧可能会大大放电电源的HV电容器，并破坏缓慢恢复的离子束电流。 高压开关由触发电路控制，该触发电路检测每个电极的电压或电流变化。 HV开关的保护电路从无功元件吸收能量，并夹紧任何过电压以保护HV开关。

公开(公告)号：WO2007143110A2

公开(公告)日：2007-12-13

申请号：PCT/US2007012966

申请日：2007-06-01

Applicant: AXCELIS TECH INC ,  HUANG YONGZHANG ,  YE JOHN ,  GRAF MICHAEL ,  FREER BRIAN ,  GODFREY CHRISTOPHER ,  SPLINTER PATRICK

Inventor： HUANG YONGZHANG ,  YE JOHN ,  GRAF MICHAEL ,  FREER BRIAN ,  GODFREY CHRISTOPHER ,  SPLINTER PATRICK

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/31703

Abstract: A method derives a terminal return current to adjust and/or compensate for variations in beam current during ion implantation. One or more individual upstream current measurements are obtained from a region of an ion implantation system. A terminal return current, or composite upstream current, is derived from the one or more current measurements. The terminal return current is then employed to adjust scanning or dose of an ion beam in order to facilitate beam current uniformity at a target wafer.

Abstract translation: 一种方法导出终端返回电流来调整和/或补偿离子注入期间束流的变化。 从离子注入系统的区域获得一个或多个单独的上游电流测量。 从一个或多个电流测量导出终端返回电流或复合上游电流。 然后使用端子返回电流来调整离子束的扫描或剂量，以便于目标晶片处的束电流均匀性。

公开(公告)号：WO2007106395A2

公开(公告)日：2007-09-20

申请号：PCT/US2007006073

申请日：2007-03-09

Applicant: AXCELIS TECH INC ,  WEIGUO QUE ,  HUANG YONGZHANG ,  YE JOHN ,  TAO DAVID

Inventor： WEIGUO QUE ,  HUANG YONGZHANG ,  YE JOHN ,  TAO DAVID

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J37/241 ,  H01J2237/0206 ,  H01J2237/2485

Abstract: The present invention is directed to a circuit for quenching an arc that may form between high voltage extraction or suppression electrodes associated with an ion source of an ion implantation system to mitigate an erratic ion beam current and avoid non-uniform ion implantations, for example. High voltage high speed switching circuits are added in series with the high voltage supplies for the suppression and/or extraction electrodes to extinguish the harmful arcs which may nearly discharge the high voltage capacitors of such HV power supplies, which dramatically affects the ion beam current and takes considerable time thereafter to recover. The high voltage switches are controlled by trigger circuits which detect current or voltages changes in the HV supplies to the electrodes. The arc quenching circuit also comprises protection circuits for the HV switches that absorb excess energy from reactive components and clamp any overvoltages to protect the HV switches.

Abstract translation: 本发明涉及一种用于淬灭电弧的电路，其可以在与离子注入系统的离子源相关联的高电压提取或抑制电极之间形成，以减轻例如不规则的离子束电流并避免例如不均匀的离子注入。 高电压高速开关电路与用于抑制和/或提取电极的高电压电源串联，以消除可能几乎放电这些高压电源的高压电容器的有害电弧，这极大地影响离子束电流和 此后需要相当长的时间来恢复。 高压开关由触发电路控制，触发电路检测到电极的HV电源中的电流或电压变化。 灭弧电路还包括用于HV开关的保护电路，其从反应部件吸收多余的能量并夹紧任何过电压以保护HV开关。