公开(公告)号：SG11201700491TA

公开(公告)日：2017-02-27

申请号：SG11201700491T

申请日：2015-07-24

Applicant: BASF SE

Inventor： STRAUTMANN JULIA ,  PACIELLO ROCCO ,  SCHAUB THOMAS ,  SCHIERLE-ARNDT KERSTIN ,  LÖFFLER DANIEL ,  WILMER HAGEN ,  EICKEMEYER FELIX ,  BLASBERG FLORIAN ,  LIMBURG CAROLIN

IPC: C23C16/18 ,  C23C16/455

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. More specifically, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R11, R12, R13, R14, R15, R16, R17, R18 are independent of each other hydrogen, an alkyl group, an aryl group, or a trialkylsilyl group, R21, R22, R23, R24 are independent of each other an alkyl group, an aryl group, or a trialkylsilyl group, n is 1 or 2, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 3.

公开(公告)号：SG11201700569VA

公开(公告)日：2017-02-27

申请号：SG11201700569V

申请日：2015-07-22

Applicant: BASF SE

Inventor： STRAUTMANN JULIA ,  PACIELLO ROCCO ,  SCHAUB THOMAS ,  EICKEMEYER FELIX ,  LÖFFLER DANIEL ,  WILMER HAGEN ,  RADIUS UDO ,  BERTHEL JOHANNES ,  HERING FLORIAN

IPC: C23C16/18 ,  C23C16/455

公开(公告)号：SG11201606042SA

公开(公告)日：2016-08-30

申请号：SG11201606042S

申请日：2015-01-22

Applicant: BASF SE

Inventor： XU KE ,  SCHILDKNECHT CHRISTIAN ,  SPIELMANN JAN ,  FRANK JÜRGEN ,  BLASBERG FLORIAN ,  GÄRTNER MARTIN ,  LÖFFLER DANIEL ,  WEIGUNY SABINE ,  SCHIERLE-ARNDT KERSTIN ,  FEDERSEL KATHARINA ,  ABELS FALKO

IPC: C23C16/455 ,  C07F3/00

Abstract: The present invention relates to a process for the generation of thin inorganic films on substrates, in particular an atomic layer deposition process. This process comprises bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4,R5, and R6 are independent of each other hydrogen,an alkyl group,or a trialkylsilyl group, n isan integer from 1 to 3, M is a metal or semimetal, 1 X is a ligand which coordinates M, and m is an integer from 0 to 4.