POLISHING END POINT DETECTION METHOD AND POLISHING END POINT DETECTION APPARATUS
    1.
    发明申请
    POLISHING END POINT DETECTION METHOD AND POLISHING END POINT DETECTION APPARATUS 审中-公开
    抛光端点检测方法和抛光端点检测装置

    公开(公告)号:US20150183084A1

    公开(公告)日:2015-07-02

    申请号:US14583505

    申请日:2014-12-26

    Abstract: There is provided a polishing end point detection method of improving the accuracy of detecting a polishing end point. The polishing end point detection method emits light toward a polishing object including a hybrid film made of a nanocarbon material and a light-transmissive material while polishing the polishing object (Step S102). Then, the polishing end point detection method receives light reflected from the polishing object (Step S103). Then, the polishing end point detection method subjects the received reflected light to signal processing (Step S104). Then, the polishing end point detection method determines the polishing end point of the polishing object based on the result of the signal processing (Step S105), and detects the polishing end point (Step S106).

    Abstract translation: 提供了一种提高抛光终点检测精度的抛光终点检测方法。 抛光终点检测方法在抛光抛光对象的同时向包括由纳米碳材料和透光材料制成的混合膜的抛光对象发光(步骤S102)。 然后,研磨终点检测方法接收从研磨对象反射的光(步骤S103)。 然后,抛光终点检测方法使接收到的反射光进行信号处理(步骤S104)。 然后,抛光终点检测方法基于信号处理的结果确定研磨对象的研磨终点,(步骤S105),并检测研磨终点(步骤S106)。

    POLISHING APPARATUS
    2.
    发明公开
    POLISHING APPARATUS 审中-公开

    公开(公告)号:US20240033876A1

    公开(公告)日:2024-02-01

    申请号:US18352325

    申请日:2023-07-14

    CPC classification number: B24B37/015 B24B37/34

    Abstract: A polishing apparatus is disclosed, which is capable of heating and maintaining a temperature distribution of a polishing pad at a predetermined temperature distribution with a simple structure. The polishing apparatus has a pad-temperature regulating apparatus for regulating a temperature of a polishing surface, and the pad-temperature regulating apparatus includes a heating-fluid nozzle arranged above and spaced apart from the polishing surface. The heating-fluid nozzle includes: a nozzle body; a slit formed along a longitudinal direction of the nozzle body for ejecting a heating fluid toward the polishing surface; a header tube which is formed within the nozzle body and into which the heating fluid is supplied; a buffer tube which is formed within the nozzle body and communicates with the slit, and a plurality of branch tubes for coupling the header tube to the buffer tube.

    SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20230321696A1

    公开(公告)日:2023-10-12

    申请号:US18128892

    申请日:2023-03-30

    Abstract: A substrate processing system capable of supplying a processing liquid containing fine bubbles at a high concentration without generating large sized bubbles in a middle of a supply line of the processing liquid is disclosed. There is provided a substrate processing system comprising: a gas dissolved water generation tank; a chemical liquid dilution module; and a substrate processing module. The substrate processing module comprises a processing liquid supply nozzle configured to supply the processing liquid onto a substrate. The processing liquid supply nozzle has a decompression release portion configured to generate fine bubbles of a gas from a diluted chemical liquid. The processing liquid supply nozzle is configured to supply the diluted chemical liquid containing fine bubbles in a process scrubbing the substrate.

    POLISHING METHOD, POLISHING APPARATUS, AND COMPUTER-READABLE STORAGE MEDIUM STORING PROGRAM

    公开(公告)号:US20230139947A1

    公开(公告)日:2023-05-04

    申请号:US17909966

    申请日:2021-02-02

    Abstract: The present invention relates to a polishing method and a polishing apparatus for polishing a substrate, such as a wafer. The present invention further relates to a computer-readable storage medium storing a program for causing the polishing apparatus to perform the polishing method. The polishing method includes: rotating a polishing table (3); and polishing a substrate (W) by pressing the substrate (W) against a polishing surface (2a). Polishing the substrate (W) includes a film-thickness profile adjustment process and a polishing-end-point detection process. The film-thickness profile adjustment process includes adjusting pressing forces on the substrate (W) against the polishing surface (2a) based on a plurality of film thicknesses, and determining a point in time at which a film-thickness index value has reached a film-thickness threshold value. The film-thickness index value is determined from at least one of the plurality of film thicknesses. The polishing-end-point detection process includes measuring a torque for rotating the polishing table (3) and determining a polishing end point based on the torque.

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