公开(公告)号：US20180012929A1

公开(公告)日：2018-01-11

申请号：US15711737

申请日：2017-09-21

Applicant: Epistar Corporation

Inventor： Shao-Ping LU ,  Yi-Ming CHEN ,  Yu-Ren PENG ,  Chun-Yu LIN ,  Chun-Fu TSAI ,  Tzu-Chieh HSU

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/00

CPC classification number: H01L27/153 ,  H01L33/005 ,  H01L33/08

Abstract: A light-emitting device comprises a carrier; a first semiconductor element formed on the carrier and comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is, the first semiconductor structure comprises a first active layer emitting a first light having a first dominant wavelength during a normal operation, and the second semiconductor structure comprises a second active layer; and a bridge on a side surface of the second active layer of the second semiconductor structure.

公开(公告)号：US20190081213A1

公开(公告)日：2019-03-14

申请号：US16128604

申请日：2018-09-12

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu CHANG ,  Hsin-Chan CHUNG ,  Hung-Ta CHENG ,  Wen-Luh LIAO ,  Shih-Chang LEE ,  Chih-Chiang LU ,  Yi-Ming CHEN ,  Yao-Ning CHAN ,  Chun-Fu TSAI

IPC: H01L33/38 ,  H01L33/30

CPC classification number: H01L33/38 ,  H01L33/30

Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle θ1, a second curve having a second angle θ2 and a third curve having a third angle θ3, wherein θ3>θ2>θ1 ∘

公开(公告)号：US20170025567A1

公开(公告)日：2017-01-26

申请号：US14808295

申请日：2015-07-24

Applicant: EPISTAR CORPORATION

Inventor： Shao-Ping LU ,  Yi-Ming CHEN ,  Yu-Ren PENG ,  Chun-Yu LIN ,  Chun-Fu TSAI ,  Tzu-Chieh HSU

IPC: H01L33/06 ,  H01L33/10 ,  H01L33/00

CPC classification number: H01L27/153 ,  H01L33/005 ,  H01L33/08

Abstract: A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation.

Abstract translation: 发光装置包括载体; 以及包括第一半导体结构和第二半导体结构的第一半导体元件，其中所述第二半导体结构比所述第一半导体结构靠近所述载体更靠近所述载流子，所述第一半导体结构包括构造成发射第一半导体结构的第一半导体结构 在正常操作期间具有第一主波长的光，并且第二半导体结构包括在正常操作期间被配置为不发光的第二MQW结构。