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公开(公告)号：US20160343913A1
公开(公告)日：2016-11-24
申请号：US14719694
申请日：2015-05-22
Applicant: Epistar Corporation
Inventor： Wei-Fan KE , Tzu-Chieh HSU , Yu-Ren PENG
Abstract: The present disclosure provides a light-emitting device. The light-emitting device comprises a light-emitting stack comprising an active layer and a first surface comprising a roughened area; a smoothing layer on the first surface, wherein the smoothing layer has a surface smoother than the first surface; and a transparent conductive layer on the smoothing layer. A method for forming the light-emitting device is also disclosed.
Abstract translation: 本发明提供一种发光装置。 发光装置包括发光堆叠，其包括有源层和包括粗糙区域的第一表面; 在所述第一表面上的平滑层，其中所述平滑层具有比所述第一表面更光滑的表面; 和平滑层上的透明导电层。 还公开了一种用于形成发光器件的方法。
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公开(公告)号：US20180012929A1
公开(公告)日：2018-01-11
申请号：US15711737
申请日：2017-09-21
Applicant: Epistar Corporation
Inventor： Shao-Ping LU , Yi-Ming CHEN , Yu-Ren PENG , Chun-Yu LIN , Chun-Fu TSAI , Tzu-Chieh HSU
CPC classification number: H01L27/153 , H01L33/005 , H01L33/08
Abstract: A light-emitting device comprises a carrier; a first semiconductor element formed on the carrier and comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is, the first semiconductor structure comprises a first active layer emitting a first light having a first dominant wavelength during a normal operation, and the second semiconductor structure comprises a second active layer; and a bridge on a side surface of the second active layer of the second semiconductor structure.
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公开(公告)号：US20170263820A1
公开(公告)日：2017-09-14
申请号：US15066095
申请日：2016-03-10
Applicant: EPISTAR CORPORATION
Inventor： Chih-Chiang LU , Yi-Chieh LIN , Rong-Ren LEE , Yu-Ren PENG , Ming-Siang HUANG , Ming-Ta CHIN , Yi-Ching LEE
IPC: H01L33/46 , H01L25/075 , H01L33/60
CPC classification number: H01L33/46 , H01L25/0753 , H01L33/04 , H01L33/10 , H01L33/60
Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer emitting first light having a peak wavelength λ nm; and an adjusting element stacked electrically connected to the active layer in series for tuning a forward voltage of the light-emitting device; wherein the forward voltage of the light-emitting device is between (1240/0.8λ) volt and (1240/0.5λ) volt.
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公开(公告)号：US20140070250A1
公开(公告)日：2014-03-13
申请号：US13856220
申请日：2013-04-03
Applicant: Epistar Corporation
Inventor： Shih-I CHEN , Tsung-Xian LEE , Yi-Ming CHEN , Wei-Yu CHEN , Ching- Pei LIN , Min-Hsun HSIEH , Cheng-Nan HAN , Tien-Yang WANG , Hsing-Chao CHEN , Hsin-Mao LIU , Zong-Xi CHEN , Tzu-Chieh HSU , Chien-Fu HUANG , Yu-Ren PENG
IPC: H01L33/50
CPC classification number: H01L33/502 , H01L25/0753 , H01L33/44 , H01L33/505 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.
Abstract translation: 本申请的实施方式的发光装置包括：基板; 形成在所述基板上的第一半导体发光结构，其中所述第一半导体发光结构包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在所述第一半导体层之间的第一有源层 层和第二半导体层，其中第一有源层能够发射具有第一主波长的第一光; 以及形成在所述第一光的路径上的第一热敏层，其中所述第一热敏层包括随温度变化而变化的材料特性。
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公开(公告)号：US20180269358A1
公开(公告)日：2018-09-20
申请号：US15983964
申请日：2018-05-18
Applicant: EPISTAR CORPORATION
Inventor： Chih-Chiang LU , Yi-Chieh LIN , Rong-Ren LEE , Yu-Ren PENG , Ming-Siang HUANG , Ming-Ta CHIN , Yi-Ching LEE
IPC: H01L33/46 , H01L33/10 , H01L33/04 , H01L33/60 , H01L25/075
CPC classification number: H01L33/46 , H01L25/0753 , H01L33/04 , H01L33/10 , H01L33/60
Abstract: A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.
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Patent Agency Ranking
公开(公告)号：US20170256678A1
公开(公告)日：2017-09-07
申请号：US15602421
申请日：2017-05-23
Applicant: EPISTAR CORPORATION
Inventor： Wen-Luh LIAO , Shao-Ping LU , Hung-Ta CHENG , Shih-I CHEN , Chia-Liang HSU , Shou-Chin WEI , Ching-Pei LIN , Yu-Ren PENG , Chien-Fu HUANG , Wei-Yu CHEN , Chun-Hsien CHANG
Abstract: A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.
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公开(公告)号：US20170025567A1
公开(公告)日：2017-01-26
申请号：US14808295
申请日：2015-07-24
Applicant: EPISTAR CORPORATION
Inventor： Shao-Ping LU , Yi-Ming CHEN , Yu-Ren PENG , Chun-Yu LIN , Chun-Fu TSAI , Tzu-Chieh HSU
CPC classification number: H01L27/153 , H01L33/005 , H01L33/08
Abstract: A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation.
Abstract translation: 发光装置包括载体; 以及包括第一半导体结构和第二半导体结构的第一半导体元件，其中所述第二半导体结构比所述第一半导体结构靠近所述载体更靠近所述载流子，所述第一半导体结构包括构造成发射第一半导体结构的第一半导体结构 在正常操作期间具有第一主波长的光，并且第二半导体结构包括在正常操作期间被配置为不发光的第二MQW结构。
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公开(公告)号：US20140346544A1
公开(公告)日：2014-11-27
申请号：US14286685
申请日：2014-05-23
Applicant: EPISTAR CORPORATION
Inventor： Wen-Luh LIAO , Shao-Ping LU , Hung-Ta CHEN , Shih-I CHEN , Chia-Liang HSU , Shou-Chin WEI , Ching-Pei LIN , Yu-Ren PENG , Chien-Fu HUANG , Wei-Yu CHEN , Chun-Hsien CHANG
CPC classification number: H01L33/22 , H01L33/30 , H01L33/405 , H01L33/42 , H01L33/46 , H01L2224/48091 , H01L2224/73265 , H01L2933/0091 , H01L2924/00014
Abstract: A light-emitting element includes a reflective layer; a first transparent layer on the reflective layer; a light-emitting stack having an active layer on the first transparent layer; and a cavity formed in the first transparent layer.
Abstract translation: 发光元件包括反射层; 在反射层上的第一透明层; 在所述第一透明层上具有活性层的发光层; 以及形成在第一透明层中的空腔。
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公开(公告)号：US20180069157A1
公开(公告)日：2018-03-08
申请号：US15796241
申请日：2017-10-27
Applicant: EPISTAR CORPORATION
Inventor： Chih-Chiang LU , Yi-Chieh LIN , Rong-Ren LEE , Yu-Ren PENG , Ming-Siang HUANG , Ming-Ta CHIN , Yi-Ching LEE
IPC: H01L33/46 , H01L25/075 , H01L33/60
CPC classification number: H01L33/46 , H01L25/0753 , H01L33/04 , H01L33/10 , H01L33/60
Abstract: A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength λ nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8λ) volt and (1240/0.5λ) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.
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10.发明申请公开(公告)号：US20160211414A1
公开(公告)日：2016-07-21
申请号：US15083743
申请日：2016-03-29
Applicant: EPISTAR CORPORATION
Inventor： Wen-Luh LIAO , Shao-Ping LU , Hung-Ta CHENG , Shih-I CHEN , Chia-Liang HSU , Shou-Chin WEI , Ching-Pei LIN , Yu-Ren PENG , Chien-Fu HUANG , Wei-Yu CHEN , Chun-Hsien CHANG
CPC classification number: H01L33/22 , H01L33/30 , H01L33/405 , H01L33/42 , H01L33/46 , H01L2224/48091 , H01L2224/73265 , H01L2933/0091 , H01L2924/00014
Abstract: An optoelectronic element comprises a semiconductor stack comprising an active layer, wherein the semiconductor stack has a first surface and a second surface opposite to the first surface; a first transparent layer on the second surface; a plurality of cavities in the first transparent layer; and a layer on the first transparent layer, wherein the first transparent layer comprises oxide or diamond-like carbon.
Abstract translation: 光电元件包括包含有源层的半导体堆叠，其中半导体堆叠具有与第一表面相对的第一表面和第二表面; 第二表面上的第一透明层; 第一透明层中的多个空腔; 和第一透明层上的层，其中第一透明层包含氧化物或类金刚石碳。
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