公开(公告)号：US20160163917A1

公开(公告)日：2016-06-09

申请号：US14908886

申请日：2013-07-29

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang LU ,  Yi-Ming CHEN ,  Chun-Yu LIN ,  Ching-Pei LIN ,  Chung-Hsun CHIEN ,  Chien-Fu HUANG ,  Hao-Min KU ,  Min-Hsun HSIEH ,  Tzu-Chieh HSU

IPC: H01L33/00 ,  H01L33/62 ,  H01L21/683

CPC classification number: H01L33/0079 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2933/0066

Abstract: A method of selectively transferring semiconductor devices comprises the steps of providing a substrate having a first surface and a second surface; providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein a adhesion between the first semiconductor epitaxial stack and the substrate is different from a adhesion between the second semiconductor epitaxial stack and the substrate; and selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.

Abstract translation: 选择性地转移半导体器件的方法包括提供具有第一表面和第二表面的衬底的步骤; 在所述第一表面上提供多个半导体外延堆叠，其中所述多个半导体外延堆叠中的每一个包括第一半导体外延堆叠和第二半导体外延堆叠，并且所述第一半导体外延堆叠体与所述第二半导体外延堆叠体分离，以及 其中所述第一半导体外延叠层和所述基板之间的粘合不同于所述第二半导体外延叠层和所述基板之间的粘附; 以及从衬底选择性地分离第一半导体外延层或第二半导体外延层。

公开(公告)号：US20170033259A1

公开(公告)日：2017-02-02

申请号：US15295226

申请日：2016-10-17

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang LU ,  Yi-Ming CHEN ,  Chun-Yu LIN ,  Ching-Pei LIN ,  Chung-Hsun CHIEN ,  Chien-Fu HUANG ,  Hao-Min KU ,  Min-Hsun HSIEH ,  Tzu-Chieh HSU

IPC: H01L33/00 ,  H01L21/683 ,  H01L33/62

CPC classification number: H01L33/0079 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2933/0066

Abstract: A semiconductor device comprises a substrate, a first semiconductor unit on the substrate, and an first adhesion structure between the substrate and the first semiconductor unit, and directly contacting the first semiconductor unit and the substrate, wherein the first adhesion structure comprises an adhesion layer and a sacrificial layer, and the adhesion layer and the sacrificial layer are made of different materials, and wherein an adhesion between the first semiconductor unit and the adhesion layer is different from that between the first semiconductor unit and the sacrificial layer.

Abstract translation: 半导体器件包括衬底，衬底上的第一半导体单元以及衬底和第一半导体单元之间的第一粘附结构，并且直接接触第一半导体单元和衬底，其中第一粘附结构包括粘附层和 牺牲层，并且粘合层和牺牲层由不同的材料制成，并且其中第一半导体单元和粘附层之间的粘附力与第一半导体单元和牺牲层之间的粘合不同。