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    LIGHT-EMITTING DEVICE
    3.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20150155444A1

    公开(公告)日：2015-06-04

    申请号：US14579807

    申请日：2014-12-22

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-I CHEN ,  Wei-Yu CHEN ,  Yi-Ming CHEN ,  Ching-Pei LIN ,  Tsung-Xian LEE

    IPC: H01L33/42

    CPC classification number: H01L33/42 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

    Abstract translation: 公开了一种发光器件，其包括具有长度，宽度，第一导电类型半导体层，第一导电类型半导体层上的有源层和有源层上的第二导电类型半导体层的发光堆叠， 其中所述第一导电类型半导体层，所述有源层和所述第二导电类型半导体层在堆叠方向上堆叠。 第一电极耦合到第一导电类型半导体层并且在平行于堆叠方向的方向上延伸，并且第二电极耦合到第二导电类型半导体层并且在平行于层叠方向的方向上延伸。 电介质层设置在第一电极和第二电极之间。

    LIGHT-EMITTING DEVICE
    5.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：US20180294383A1

    公开(公告)日：2018-10-11

    申请号：US16003866

    申请日：2018-06-08

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-I CHEN ,  Wei-Yu CHEN ,  Yi-Ming CHEN ,  Ching-Pei LIN ,  Tsung-Xian LEE

    IPC: H01L33/42 ,  H01L33/38

    Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

    METHOD OF SELECTIVELY TRANSFERRING SEMICONDUCTOR DEVICE
    7.
    发明申请
    METHOD OF SELECTIVELY TRANSFERRING SEMICONDUCTOR DEVICE 有权
    选择性传输半导体器件的方法

    公开(公告)号：US20160163917A1

    公开(公告)日：2016-06-09

    申请号：US14908886

    申请日：2013-07-29

    Applicant: EPISTAR CORPORATION

    Inventor： Chih-Chiang LU ,  Yi-Ming CHEN ,  Chun-Yu LIN ,  Ching-Pei LIN ,  Chung-Hsun CHIEN ,  Chien-Fu HUANG ,  Hao-Min KU ,  Min-Hsun HSIEH ,  Tzu-Chieh HSU

    IPC: H01L33/00 ,  H01L33/62 ,  H01L21/683

    CPC classification number: H01L33/0079 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2933/0066

    Abstract: A method of selectively transferring semiconductor devices comprises the steps of providing a substrate having a first surface and a second surface; providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein a adhesion between the first semiconductor epitaxial stack and the substrate is different from a adhesion between the second semiconductor epitaxial stack and the substrate; and selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.

    Abstract translation: 选择性地转移半导体器件的方法包括提供具有第一表面和第二表面的衬底的步骤; 在所述第一表面上提供多个半导体外延堆叠，其中所述多个半导体外延堆叠中的每一个包括第一半导体外延堆叠和第二半导体外延堆叠，并且所述第一半导体外延堆叠体与所述第二半导体外延堆叠体分离，以及 其中所述第一半导体外延叠层和所述基板之间的粘合不同于所述第二半导体外延叠层和所述基板之间的粘附; 以及从衬底选择性地分离第一半导体外延层或第二半导体外延层。

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