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    LIGHT EMITTING DEVICE AND THE MANUFACTURING METHOD
    1.
    发明申请
    LIGHT EMITTING DEVICE AND THE MANUFACTURING METHOD 审中-公开

    公开(公告)号：US20200227591A1

    公开(公告)日：2020-07-16

    申请号：US16828462

    申请日：2020-03-24

    Applicant: EPISTAR CORPORATION

    Inventor： Min-Hsun HSIEH ,  Tzer-Perng CHEN ,  Jen-Chau WU ,  Yuh-Ren SHIEH ,  Chuan-Cheng TU

    IPC: H01L33/22 ,  H01L33/00 ,  H01L23/00

    Abstract: The present disclosure provides a light-emitting apparatus comprising a board having a plurality of first metal contacts and a plurality of second metal contacts on a top surface; a plurality of LEDs being bonded to the board, the each of the LEDs comprising a first cladding layer on the substrate, an active layer on the first cladding layer, a second cladding layer on the active layer, an upper surface on the second cladding layer, a first metal layer, and a second metal layer, wherein the first metal layer and the second metal layer are between the active layer and the board; an opaque layer between the adjacent LEDs and comprising a polymer mixed with a plurality of inorganic particles; and an encapsulating layer on the upper surfaces and opposite to the board, wherein the encapsulating layer does not cover a side wall of the active layer; and an underfill material between the board and the plurality of LEDs, wherein the underfill material surrounds each of the first metal layer and the second metal layer.

    LIGHT EMITTING DEVICE AND MANUFACTURE METHOD THEREOF
    3.
    发明申请
    LIGHT EMITTING DEVICE AND MANUFACTURE METHOD THEREOF 有权
    发光装置及其制造方法

    公开(公告)号：US20140131760A1

    公开(公告)日：2014-05-15

    申请号：US14157369

    申请日：2014-01-16

    Applicant: EPISTAR CORPORATION

    Inventor： Tzer-Perng CHEN ,  Jen-Chau WU ,  Chuan-Cheng TU ,  Yuh-Ren SHIEH

    IPC: H01L33/62

    CPC classification number: H01L33/385 ,  H01L25/0753 ,  H01L33/36 ,  H01L33/38 ,  H01L33/387 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    Abstract: A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer. The first conductive layer includes a rough surface so as to improve a light extraction efficiency.

    Abstract translation: 提供了包括发光结构，第一介电层，第一金属层，第二金属层和第二介电层的倒装LED。 发光结构包括第一导电层，有源层和第二导电层。 有源层设置在第一导电层上，第二导电层设置在有源层上。 第一金属层设置在发光结构上并与第一导电层接触，第一金属层的一部分设置在第一介电层上。 第二金属层设置在发光结构上并与第二导电层接触，第二金属层的一部分设置在第一介电层上。 第二电介质层设置在第一电介质层上。 第一导电层包括粗糙表面以提高光提取效率。

    INTERGRATED LIGHTING APPARATUS AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    INTERGRATED LIGHTING APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权
    互动照明装置及其制造方法

    公开(公告)号：US20140361319A1

    公开(公告)日：2014-12-11

    申请号：US14466284

    申请日：2014-08-22

    Applicant: Epistar Corporation

    Inventor： Hsin-Mao LIU ,  Min-Hsun HSIEH ,  Tzer-Perng CHEN ,  Meng-Yuan HONG ,  Cheng Nan HAN ,  Tsung-Xian LEE ,  Ta-Cheng HSU ,  Chih-Chiang LU

    IPC: H01L33/62 ,  H01L27/15

    CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L27/153 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An integrated lighting apparatus comprises a first control device including a semiconductor substrate, an integrated circuit block formed above a first portion of the semiconductor substrate, and a plurality of power pads formed above the integrated circuit block; a first light emitting device formed above a second portion of the semiconductor substrate; and a through plug passing through the semiconductor substrate for electrically connecting the first control device and the first light emitting device.

    Abstract translation: 集成照明装置包括：第一控制装置，包括半导体衬底，形成在半导体衬底的第一部分上方的集成电路块;以及形成在集成电路块之上的多个电源焊盘; 形成在所述半导体衬底的第二部分上方的第一发光器件; 以及穿过所述半导体基板的贯穿插头，用于电连接所述第一控制装置和所述第一发光装置。

    LIGHT EMITTING DEVICE AND MANUFACTURE METHOD THEREOF
    9.
    发明申请
    LIGHT EMITTING DEVICE AND MANUFACTURE METHOD THEREOF 有权
    发光装置及其制造方法

    公开(公告)号：US20140186979A1

    公开(公告)日：2014-07-03

    申请号：US14082960

    申请日：2013-11-18

    Applicant: EPISTAR CORPORATION

    Inventor： Chuan-Cheng TU ,  Jen-Chau WU ,  Yuh-Ren SHIEH ,  Tzer-Perng CHEN ,  Min-Hsun HSIEH

    IPC: H01L33/08 ,  H01L33/52 ,  H01L33/50

    CPC classification number: H01L33/52 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/38 ,  H01L33/504 ,  H01L2224/13 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present disclosure provides a method for forming a light-emitting apparatus, comprising providing a first board having a plurality of first metal contacts, providing a substrate, forming a plurality of light-emitting stacks and trenches on the substrate, wherein the light-emitting stacks are apart from each other by the plurality of the trenches, bonding the light-emitting stacks to the first board, forming an encapsulating material commonly on the plurality of the light-emitting stacks, and cutting the first board and the encapsulating material to form a plurality of chip-scale LED units.

    Abstract translation: 本公开提供了一种形成发光装置的方法，包括提供具有多个第一金属触点的第一板，提供基板，在所述基板上形成多个发光叠层和沟槽，其中所述发光 堆叠通过多个沟槽彼此分开，将发光叠层结合到第一板，在多个发光叠层上通常形成封装材料，并切割第一板和封装材料以形成 多个芯片级LED单元。

    OPTOELECTRONIC SEMICONDUCTOR DEVICE
    10.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR DEVICE 有权
    光电半导体器件

    公开(公告)号：US20130015584A1

    公开(公告)日：2013-01-17

    申请号：US13625139

    申请日：2012-09-24

    Applicant: EPISTAR CORPORATION

    Inventor： Wei-Yo CHEN ,  Yen-Wen CHEN ,  Chien-Yuan WANG ,  Min-Hsun HSIEH ,  Tzer-Perng CHEN

    IPC: H01L23/482

    CPC classification number: H01L33/38 ,  H01L24/02 ,  H01L31/022408 ,  H01L31/022433 ,  H01L33/382 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  Y02E10/50 ,  H01L2924/00

    Abstract: An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad, a second conductivity type bonding pad, a first conductivity type extension electrode, and a second conductivity type extension electrode wherein the first conductivity type extension electrode and the second conductivity type extension electrode have three-dimensional crossover, and partial of the first conductivity type extension electrode and the first conductivity type contact zone or the first conductivity type bonding pad are on the opposite sides of the active layer.

    Abstract translation: 光电子半导体器件包括衬底，具有形成在衬底上的有源层和形成在半导体系统上的电极结构的半导体系统，其中具有至少第一导电类型接触区或第一导电类型的电极结构的布局 接合焊盘，第二导电型接合焊盘，第一导电型延伸电极和第二导电型延伸电极，其中第一导电类型延伸电极和第二导电类型延伸电极具有三维交叉，部分第一导电性 第一导电型接触区或第一导电型接合垫位于有源层的相对侧上。

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