公开(公告)号：JPH10306126A

公开(公告)日：1998-11-17

申请号：JP26827897

申请日：1997-10-01

Applicant: HOECHST AG ,  HNA HOLDINGS INC

Inventor： ASLAM MOHAMMAD ,  VICARI RICHARD ,  DAMMEL RALPH ,  LINGNAU JUERGEN ,  DOESSEL KARL-FRIEDRICH

IPC: B01J27/02 ,  B01J27/06 ,  B01J27/24 ,  C07B61/00 ,  C07C45/54 ,  C07C45/63 ,  C07C67/297 ,  C07C69/157 ,  C08F8/12 ,  C08F12/00 ,  C08F12/14 ,  C08F112/14

Abstract: PROBLEM TO BE SOLVED: To obtain a poly(halogen-substituted-4-hydroxystyrene) by reacting 4-hydroxyacetophenone with a halogenated reagent to give a corresponding 3-mono or 3,5-dihalogen-substituted derivative, esterifying the derivative, reducing the ester to give an ethanol compound, dehydrating the ethanol compound to give a styrene compound, subjecting the styrene compound to radical polymerization to give a polymer, and hydrolyzing the polymer. SOLUTION: 4-Hydroxyacetophenone represented by the formula (wherein R1 is H or a 1-10C alkyl; and R2 and R3 are each H, alkyl, alkoxy or halogeno) is reacted with a halogenated reagent to give a corresponding 3-mono or 3,5- dihalogen-substituted-4-hydroxyacetophenone, which is esterified to form 4- acetoxyacetophenone. This ester is reduced with a sufficient amount of a reducing agent to give acetoxyphenyl ethanol, which is dehydrated to give 4- acetoxystyrene. The 4-acetoxystyrene is subjected to free-radical polymerization to give a polymer having a molecular weight of 1,000 to 800,000, and this polymer is hydrolyzed to give an objective material.

公开(公告)号：ZA9202813B

公开(公告)日：1992-11-25

申请号：ZA9202813

申请日：1992-04-16

Applicant: HOECHST AG

Inventor： PAWLOWSKI GEORG ,  GEORG PAWLOWSKI ,  ROESCHERT HORST ,  HORST ROESCHERT ,  SPIESS WALTER ,  WALTER SPIESS ,  DAMMEL RALPH ,  RALPH DAMMEL

IPC: C09K11/00 ,  C07C235/08 ,  C07C271/16 ,  C07C275/04 ,  C07C275/24 ,  C07C275/28 ,  C07C323/10 ,  C07D317/54 ,  C08G69/00 ,  C08G71/00 ,  G01D15/14 ,  G03F7/004 ,  G03F7/039 ,  C07C ,  C07D ,  G03F

CPC classification number: G03F7/039 ,  C07C271/16 ,  C07C275/24 ,  C07D317/54 ,  C08G69/00 ,  C08G71/00 ,  G03F7/0045 ,  Y10S430/106

公开(公告)号：BR9200681A

公开(公告)日：1992-11-10

申请号：BR9200681

申请日：1992-02-27

Applicant: HOECHST AG

Inventor： ROESCHERT HORST ,  MERREM HANS-JOACHIM ,  PAWLOWSKI GEORG ,  FUCHS JUERGEN ,  DAMMEL RALPH

IPC: C08F8/30 ,  C08F12/00 ,  C08F12/14 ,  C08F212/14 ,  C08F220/20 ,  G03F7/039 ,  C08F8/14

Abstract: The invention relates to radiation-sensitive polymers, to a mixture essentially containing these radiation-sensitive polymers as binders and to a process for preparing the radiation-sensitive polymeric binder and also to a positive-working radiation-sensitive recording material which is produced using the radiation-sensitive mixture.

公开(公告)号：ZA9201510B

公开(公告)日：1992-10-28

申请号：ZA9201510

申请日：1992-02-28

Applicant: HOECHST AG

Inventor： PRZYBILLA KLAUS JUERGEN ,  KLAUS JUERGEN PRZYBILLA ,  DAMMEL RALPH ,  RALPH DAMMEL ,  PAWLOWSKI GEORG ,  GEORG PAWLOWSKI

IPC: C07C69/96 ,  C08F20/30 ,  G03F7/039 ,  C07C ,  C07D ,  G03F ,  H01L

CPC classification number: C07C69/96 ,  C08F20/30 ,  G03F7/039 ,  Y02P20/55

公开(公告)号：AU1125392A

公开(公告)日：1992-09-03

申请号：AU1125392

申请日：1992-02-27

Applicant: HOECHST AG

Inventor： MERREM HANS-JOACHIM ,  ROESCHERT HORST ,  PAWLOWSKI GEORGE ,  FUCHS JUERGEN ,  DAMMEL RALPH

IPC: B41M5/26 ,  C08F12/00 ,  C08F212/14 ,  G03F7/023 ,  H01L21/027 ,  G03F7/004

Abstract: The invention relates to radiation-sensitive polymers, to a mixture essentially containing these radiation-sensitive polymers as binders and, furthermore, to a process for preparing the radiation-sensitive polymeric binder and also to a positive-working radiation-sensitive recording material which is produced using the radiation-sensitive mixture.

公开(公告)号：ZA90168B

公开(公告)日：1991-04-24

申请号：ZA90168

申请日：1990-01-10

Applicant: HOECHST AG

Inventor： WILHARM PETER ,  PETER WILHARM ,  PAWLOWSKI GEORG ,  GEORG PAWLOWSKI ,  MERREM HANS-JOACHIM ,  HANS-JOACHIM MERREM ,  DAMMEL RALPH ,  RALPH DAMMEL

IPC: G03F7/039 ,  A61K8/00 ,  A61Q17/04 ,  C07C245/18 ,  C07C271/10 ,  C07C271/20 ,  C07C271/24 ,  C07C275/10 ,  C07C275/26 ,  C07C275/32 ,  C07C275/40 ,  C07C323/12 ,  C07D209/48 ,  C07D251/34 ,  C07D295/14 ,  C08F2/50 ,  C09K3/00 ,  G03C1/52 ,  G03F7/004 ,  G03F7/016 ,  H01L21/027 ,  H01L21/30 ,  G03F ,  G03C

Abstract: Multifunctional alpha -diazo- beta -ketoesters of the general formula I are described … … in which… R denotes an aliphatic, cycloaliphatic or araliphatic or aromatic radical having 4 to 20 carbon atoms, where individual CH2 groups can be replaced by oxygen or sulphur atoms or by … … or NH groups and/or contain keto groups,… X denotes an aliphatic, cycloaliphatic, carbocyclic, heterocyclic or araliphatic radical having 2 to 22 carbon atoms, where individual CH2 groups can be replaced by oxygen or sulphur atoms or by the groups -NR -, -C(O)-O-, -C(O)-NR -, -C(O)- … … -NR -C(O)-NR -, -O-C(O)-NR -, -O-C(O)- … … -O-C(O)-O- or CH groups can be replaced by … … in which R and R independently of one another stand for hydrogen or an aliphatic, carbocyclic or araliphatic radical,… m denotes an integer from 2 to 10 and… n denotes an integer from 0 to 2,… with the proviso that… m-n is >/= 2. … The compounds mentioned are used as photoactive components in radiation-sensitive mixtures.

公开(公告)号：ZA9001797B

公开(公告)日：1990-11-28

申请号：ZA9001797

申请日：1990-03-08

Applicant: HOECHST AG

Inventor： DAMMEL RALPH ,  RALPH DAMMEL ,  PAWLOWSKI GEORG ,  GEORG PAWLOWSKI ,  LINGNAU JUERGEN ,  JUERGEN LINGNAU ,  THEIS JUERGEN ,  JUERGEN THEIS

IPC: G03F7/039 ,  G03F7/004 ,  H01L21/027 ,  G03F

CPC classification number: G03F7/0045

公开(公告)号：FI901179A0

公开(公告)日：1990-03-08

申请号：FI901179

申请日：1990-03-08

Applicant: HOECHST AG

Inventor： DAMMEL RALPH ,  LINGNAU JURGEN ,  PAWLOWSKI GEORG ,  THEIS JURGEN

IPC: G03F7/039 ,  C07C271/28 ,  C07C275/50 ,  C08K5/00 ,  C08L61/00 ,  C08L61/04 ,  G03F7/004 ,  H01L21/027 ,  G03F

Abstract: A radiation-curable mixture is proposed which contains a compound which forms an acid when exposed to high-energy radiation and a compound which is acid-cleavable, and which is characterised in that the compound which forms an acid contains aliphatically bound halogen (chlorine or bromine) and has a pKa of less than 12 or is a derivative of a compound having such a pKa, which derivative can be converted into the free compound by acid catalysis. The composition claimed, and in particular the recording material prepared therefrom, has a higher sensitivity and an improved resolution, and in addition exhibits no image haze after development.

公开(公告)号：FI901178A0

公开(公告)日：1990-03-08

申请号：FI901178

申请日：1990-03-08

Applicant: HOECHST AG

Inventor： DAMMEL RALPH ,  LINGNAU JURGEN ,  PAWLOWSKI GEORG ,  THEIS JURGEN

IPC: G03F7/039 ,  G03F7/004 ,  H01L21/027 ,  G03F

Abstract: A positive radiation-sensitive mixture is disclosed which contains a compound which forms an acid under the action of high-energy radiation, and an acid-cleavable compound, wherein the compound which forms an acid contains aliphatically bound halogen (chlorine or bromine) and has a pKa value of less than about 12 or is a derivative of a compound having such a pKa value which can be converted into the free compound by acid catalysis. A positive recording material and a process for recording high-energy radiation using the material are also disclosed. The mixture, and in particular the recording material produced therefrom, has relatively high sensitivity and improved resolution and, in addition, does not exhibit image fogging after development.

公开(公告)号：SG43323A1

公开(公告)日：1997-10-17

申请号：SG1996008358

申请日：1989-06-16

Applicant: HOECHST AG

Inventor： DAMMEL RALPH ,  DOESSEL KARL-FRIEDRICH ,  LINGNAU JUERGEN ,  THEIS JUERGEN

IPC: G03F7/004 ,  G03F7/029 ,  G03F7/038 ,  H01L21/027 ,  H01L21/30 ,  G03F

Abstract: A radiation-curable composition which comprises a compound that forms an acid under the action of high-energy radiation and an acid-hardening substance, wherein the compound forming an acid contains aromatically linked chlorine or bromine and has a pKa value below 12. The composition and the recording material prepared therefrom display increased sensitivity, improved resolution and a high etch resistance after development.