公开(公告)号：EP2130276A4

公开(公告)日：2012-01-18

申请号：EP08744599

申请日：2008-03-28

Applicant: IBM

Inventor： ABOU-KHALIL MICHEL J ,  GAUTHIER ROBERT ,  LI HONGMEI ,  LI JUNJUN ,  MITRA SOUVICK ,  PUTNAM CHRISTOPHER S

IPC: H02H9/00 ,  H01L27/02

CPC classification number: H01L27/0277 ,  H01L27/0262 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：WO2011002612A3

公开(公告)日：2011-03-10

申请号：PCT/US2010038934

申请日：2010-06-17

Applicant: IBM ,  ABOU-KHALIL MICHEL J ,  LEE TOM C ,  LI JUNJUN ,  GAUTHIER ROBERT J JR ,  PUTNAM CHRISTOPHER S ,  MITRA SOUVICK

Inventor： ABOU-KHALIL MICHEL J ,  LEE TOM C ,  LI JUNJUN ,  GAUTHIER ROBERT J JR ,  PUTNAM CHRISTOPHER S ,  MITRA SOUVICK

IPC: H01L21/82 ,  H01L27/02

CPC classification number: G11C17/16 ,  G11C11/5692 ,  H01L23/5252 ,  H01L23/5256 ,  H01L27/101 ,  H01L27/112 ,  H01L27/11206 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/14 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed are embodiments of an e-fuse programming/re-programming circuit. In one embodiment, the e-fuse (150) has two short high atomic diffusion resistance conductor layers (110, 130) positioned on opposite sides (121, 122) and at a same end (123) of a long low atomic diffusion resistance conductor layer (120). A voltage source (170) is used to vary the polarity and, optionally, the magnitude of voltage applied to the terminals (first terminal = 170/161/110; second terminal = 170/162/130; third terminal = 170/163/proximate end 123 of conductor layer 120; and, fourth terminal = 170/164/distal end 124 of conductor layer 120) in order to control bi-directional flow of electrons within the long conductor layer and, thereby formation of opens and/or shorts at the long conductor layer-short conductor layer interfaces (125, 126). The formation of such opens and/or shorts can be used to achieve different programming states (11, 01, 10, 00). Other circuit structure embodiments incorporate e-fuses (650) with additional conductor layers and additional terminals so as to allow for even more programming states. Also disclosed are embodiments of associated e-fuse programming and re-programming methods.

Abstract translation: 公开了电子熔丝编程/重新编程电路的实施例。 在一个实施例中，电子熔丝（150）具有两个短的高原子扩散电阻导体层（110,130），其位于长的低原子扩散电阻导体（110,130）的相对侧（121,122）上和同一端（123） 层（120）。 使用电压源（170）来改变施加到端子（第一端= 170/161/110;第二端= 170/162/130;第三端= 170/163 / 以控制导体层120的近端123;以及导体层120的第四端子= 170/164 /远端124），以便控制长导体层内电子的双向流动，从而形成开路和/或短路 在长导体层 - 短导体层界面（125,126）处。 这种开路和/或短路的形成可以用来实现不同的编程状态（11,01,10,00）。 其他电路结构实施例将e熔丝（650）与额外的导体层和额外的端子结合，以允许更多的编程状态。 还公开了相关联的电子熔丝编程和重新编程方法的实施例。

公开(公告)号：GB2483612A

公开(公告)日：2012-03-14

申请号：GB201200546

申请日：2010-06-17

Applicant: IBM

Inventor： ABOU-KHALIL MICHEL J ,  LEE TOM C ,  GAUTHIER JR ROBERT J ,  PUTNAM CHRISTOPHER S ,  MITRA SOUVICK ,  LI JUNJUN

IPC: H01L21/82 ,  H01L27/02

Abstract: Disclosed are embodiments of an e-fuse programming/re-programming circuit. In one embodiment, the e-fuse (150) has two short high atomic diffusion resistance conductor layers (110, 130) positioned on opposite sides (121, 122) and at a same end (123) of a long low atomic diffusion resistance conductor layer (120). A voltage source (170) is used to vary the polarity and, optionally, the magnitude of voltage applied to the terminals (first terminal = 170/161/110; second terminal = 170/162/130; third terminal = 170/163/proximate end 123 of conductor layer 120; and, fourth terminal = 170/164/distal end 124 of conductor layer 120) in order to control bi-directional flow of electrons within the long conductor layer and, thereby formation of opens and/or shorts at the long conductor layer-short conductor layer interfaces (125, 126). The formation of such opens and/or shorts can be used to achieve different programming states (11, 01, 10, 00). Other circuit structure embodiments incorporate e-fuses (650) with additional conductor layers and additional terminals so as to allow for even more programming states. Also disclosed are embodiments of associated e-fuse programming and re-programming methods.

公开(公告)号：DE112010002791B4

公开(公告)日：2014-03-20

申请号：DE112010002791

申请日：2010-06-17

Applicant: IBM

Inventor： ABOU-KHALIL MICHEL J ,  LEE TOM C ,  LI JUNJUN ,  GAUTHIER ROBERT J JR ,  PUTNAM CHRISTOPHER S ,  MITRA SOUVICK

IPC: H01L23/525 ,  H01L21/768 ,  H01L27/02 ,  H01L27/112

Abstract: Schaltkreisstruktur (100), die Folgendes umfasst: eine Sicherung (150) mit einer ersten Leiterschicht (110), mit einer zweiten Leiterschicht (120) auf der ersten Leiterschicht (110) und mit einer dritten Leiterschicht (130) oberhalb der zweiten Leiterschicht (120), wobei die erste Leiterschicht (110) und die dritte Leiterschicht (130) jeweils einen höheren Atomdiffusionswiderstand als die zweite Leiterschicht (120) aufweisen; eine Spannungsquelle (170); und elektrische Verbindungen (161–164) zwischen der Spannungsquelle (170) und der ersten Leiterschicht (110), zwischen der Spannungsquelle (170) und entgegengesetzten Enden (121, 122) der zweiten Leiterschicht (120) und zwischen der Spannungsquelle (170) und der dritten Leiterschicht (130), wobei die Spannungsquelle (170) selektiv gesteuert werden kann, damit -eine Polarität der Spannung an ausgewählten elektrischen Verbindungen (161–164) geändert werden kann, wodurch ein bidirektionaler Elektronenfluss (220, 320, 420, 520) innerhalb der zweiten Leiterschicht (120) und dadurch eine zerstörungsfreie Bildung von entweder Leitungsunterbrechungen (201, 403, 501, 503) oder Kurzschlüssen innerhalb der zweiten Leiterschicht (120) an den Grenzflächen (125, 126) zur ersten Leiterschicht (110) und zur dritten Leiterschicht (130) selektiv gesteuert wird, wodurch reversibel aufgrund diffundierender Atome von den Grenzflächen (125, 126) weg aus den Kurzschlüssen die Leitungsunterbrechungen (201, 403, 501, 503) entstehen.

公开(公告)号：GB2483612B

公开(公告)日：2013-07-10

申请号：GB201200546

申请日：2010-06-17

Applicant: IBM

Inventor： ABOU-KHALIL MICHEL J ,  LEE TOM C ,  GAUTHIER JR ROBERT J ,  PUTNAM CHRISTOPHER S ,  MITRA SOUVICK ,  LI JUNJUN

IPC: H01L21/82 ,  H01L27/02

Abstract: In one embodiment of an e-fuse programming/re-programming circuit, the e-fuse has two short high atomic diffusion resistance conductor layers positioned on opposite sides and at a same end of a long low atomic diffusion resistance conductor layer. A voltage source is used to vary the polarity and, optionally, the magnitude of voltage applied to the terminals in order to control bi-directional flow of electrons within the long conductor layer and, thereby formation of opens and/or shorts at the long conductor layer-short conductor layer interfaces. The formation of such opens and/or shorts can be used to achieve different programming states. Other circuit structure embodiments incorporate e-fuses with additional conductor layers and additional terminals so as to allow for even more programming states. Also disclosed are embodiments of associated e-fuse programming and re-programming methods.

公开(公告)号：GB2497704A

公开(公告)日：2013-06-19

申请号：GB201306287

申请日：2011-09-14

Applicant: IBM

Inventor： ABOU-KHALIL MICHEL J ,  GAUTHIER JR ROBERT J ,  LEE TOM C ,  LI JUNJUN ,  MITRA SOUVICK ,  PUTNAM CHRISTOPHER S

IPC: H01L27/02

Abstract: Bi-directional back-to-back stacked SCRs for high-voltage pin ESD protection, methods of manufacture and design structures are provided. The device includes a symmetrical bi-directional back-to-back stacked silicon controlled rectifier (SCR). An anode (10a) of a first of the back-to-back stacked SCR (10) is connected to an input (30). An anode (20a) of a second of the back-to-back stacked SCR (20) is connected to ground (GND). Cathodes (10b, 20b) of the first and second of the back- to-back stacked SCR are connected together. Each of the symmetrical bi-directional back-to-back SCRs include a pair of diodes (Di, D2) directing current towards the cathodes which, upon application of a voltage, become reverse biased effectively deactivating elements from one of the symmetrical bi-directional back-to-back SCRs while the diodes (D3, D4) of another of the symmetrical bi-directional back-to-back SCRs direct current in the same direction as the reverse biased diodes.