公开(公告)号：CA1330193C

公开(公告)日：1994-06-14

申请号：CA594665

申请日：1989-03-23

Applicant: IBM

Inventor： GRAF VOLKER ,  MUELLER CARL A

IPC: C30B23/08 ,  C01G1/00 ,  C23C14/08 ,  C23C14/24 ,  C30B25/02 ,  C30B29/22 ,  H01B12/00 ,  H01B13/00 ,  H01L39/12 ,  H01L39/24

Abstract: This is a method for making layered structures of artificial high-Tc superconductor compounds by which on top of a seed crystal (7) having a lattice structure matching the lattice structure of the superconductor compound to be made, oxide layers (4, 5, 6) of all constituent components are epitaxially grown in a predetermined sequence so as to create a sandwich structure not found in natural crystals. The epitaxial deposition of the constituent components is performed in a reaction chamber having evaporation facilities, inlets for metal-organic gases, and inlets for background gases including oxygen.

公开(公告)号：CA1315015C

公开(公告)日：1993-03-23

申请号：CA582214

申请日：1988-11-03

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  MUELLER CARL A ,  WOLF HANS P

IPC: H01L39/22 ,  H01L39/14

Abstract: SZ 9-87-012 A Field-Effect Device with a Superconducting Channel. A field-effect structure, formed on a substrate (20) and comprising a channel (21) with source (22) and drain (23) as well as a gate (25) that is separated from the channel by an insulating layer (24). The channel is made of a high-Tc metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 1021/cm3 and a correlation length of about .2 nm. The channel thickness is in the order of 1 nm, it is single crystalline and oriented such that the superconducting behaviour is strongest in the plane parallel to the substrate. With a signal of a few Volt applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched between "zero" (undepleted, superconducting) and "very high" (depleted).

公开(公告)号：HUT49422A

公开(公告)日：1989-09-28

申请号：HU26388

申请日：1988-01-22

Applicant: IBM

Inventor： BEDNORZ JOHANNES G ,  MUELLER CARL A ,  TAKASHIGE MASAAKI

IPC: C04B35/45 ,  H01L39/12 ,  H01L39/24 ,  H01B12/00

Abstract: The superconductive compounds are oxides of the general formula RE2-xAExTM.O4-y , wherein RE is a rare earth, AE is a member of the group of alkaline earths or a combination of at least two member of that group, and TM is a transition metal, and wherein x

公开(公告)号：CA2058780A1

公开(公告)日：1992-07-08

申请号：CA2058780

申请日：1992-01-06

Applicant: IBM

Inventor： BEDNORZ JOHANNES G ,  MANNHART JOCHEN D ,  MUELLER CARL A

IPC: H01L39/22 ,  B05D5/12 ,  H01B12/00 ,  H01L21/336 ,  H01L39/14 ,  H01L39/24

Abstract: SZ9-90-015 SUPERCONDUCTING FIELD-EFFECT TRANSISTORS WITH INVERTED MISFET STRUCTURE AND METHOD FOR MAKING THE SAME This field-effect transistor comprises a conductive substrate serving as the gate electrode, an insulating barrier layer, and a superconducting channel layer on top of the barrier layer. The superconductor layer carries a pair of mutually spaced electrodes forming source and drain, respectively. The substrate is provided with an appropriate gate contact. The substrate consists of a material belonging to the same crystallographic family as the barrier layer. In a preferred embodiment, the substrate is niobium-doped strontium titanate, the barrier layer is undoped strontium titanate, and the superconductor is a thin film of a material having a lattice constant at least approximately similar to the one of the materials of the substrate and barrier layers. A preferred material of this type is YBa2Cu3O7-.delta., where O ? .delta. ? 0.5.

公开(公告)号：CA1216961A

公开(公告)日：1987-01-20

申请号：CA469778

申请日：1984-12-11

Applicant: IBM

Inventor： GRAF VOLKER ,  GUERET PIERRE L ,  MUELLER CARL A

IPC: H01L29/15 ,  H01L39/22

Abstract: LOW TEMPERATURE TUNNELING TRANSISTOR The low temperature tunneling transistor comprises a source electrode and a drain electrode, with a semiconductor tunnel channel arranged therebetween. A gate for applying control signals is coupled to the channel. The semiconductor, at low temperatures, behaves like an insulator with a low barrier through which charge carriers can tunnel under the influence of an applied drain voltage. The tunnel current can be controlled by a gate voltage which modifies the barrier height between source and drain thereby changing the tunnel probability.