公开(公告)号：AT150593T

公开(公告)日：1997-04-15

申请号：AT92810786

申请日：1992-10-14

Applicant: IBM

Inventor： BROOM RONALD F DR

IPC: G02B6/42 ,  H01L33/48 ,  H01L33/54 ,  H01S5/00 ,  H01S5/022 ,  H01S3/025 ,  H01L33/00

Abstract: Encapsulation of semiconductor light emitting diodes (40), in particular laser diodes, characterized in that a gap (47) is formed in an encapsulant (45), which is situated in front of the light emitting facet of the diode (40), said gap preventing the encapsulant (45) from adhering to this facet.

公开(公告)号：DE69218431T2

公开(公告)日：1997-09-25

申请号：DE69218431

申请日：1992-10-14

Applicant: IBM

Inventor： BROOM RONALD F DR

IPC: G02B6/42 ,  H01L33/48 ,  H01L33/54 ,  H01S5/00 ,  H01S5/022 ,  H01S3/025 ,  H01L33/00

Abstract: Encapsulation of semiconductor light emitting diodes (40), in particular laser diodes, characterized in that a gap (47) is formed in an encapsulant (45), which is situated in front of the light emitting facet of the diode (40), said gap preventing the encapsulant (45) from adhering to this facet.

公开(公告)号：ES2101074T3

公开(公告)日：1997-07-01

申请号：ES92810786

申请日：1992-10-14

Applicant: IBM

Inventor： BROOM RONALD F DR

IPC: G02B6/42 ,  H01L33/48 ,  H01L33/54 ,  H01S5/00 ,  H01S5/022 ,  H01S3/025 ,  H01L33/00

Abstract: Encapsulation of semiconductor light emitting diodes (40), in particular laser diodes, characterized in that a gap (47) is formed in an encapsulant (45), which is situated in front of the light emitting facet of the diode (40), said gap preventing the encapsulant (45) from adhering to this facet.

公开(公告)号：DE69218431D1

公开(公告)日：1997-04-24

申请号：DE69218431

申请日：1992-10-14

Applicant: IBM

Inventor： BROOM RONALD F DR

IPC: G02B6/42 ,  H01L33/48 ,  H01L33/54 ,  H01S5/00 ,  H01S5/022 ,  H01S3/025 ,  H01L33/00

Abstract: Encapsulation of semiconductor light emitting diodes (40), in particular laser diodes, characterized in that a gap (47) is formed in an encapsulant (45), which is situated in front of the light emitting facet of the diode (40), said gap preventing the encapsulant (45) from adhering to this facet.

公开(公告)号：DE69006353T2

公开(公告)日：1994-06-23

申请号：DE69006353

申请日：1990-05-25

Applicant: IBM

Inventor： BROOM RONALD F DR ,  GASSER MARCEL ,  HARDER CHRISTOPH DR ,  LATTA ERNST-EBERHARD DR ,  OOSENBRUG ALBERTUS ,  RICHARD HEINZ ,  VETTIGER PETER

IPC: B28D5/00 ,  H01L21/301 ,  H01S5/00 ,  H01S5/02 ,  H01L21/00

Abstract: A method for cleaving semiconductor wafers, or segments thereof, which comprises placing the wafer (11), provided with scribe lines (15) defining the planes where cleaving is to take place, inbetween a pair of flexible transport bands (12,13) and guiding it around a curved, large radius surface (21) thereby applying a bending moment. With a moment of sufficient magnitude, individual bars (22) are broken off the wafer as this is advanced, the bars having front- and rear-end facets. On cleaving, each bar, while still pressed against the curved surface, is automatically separated whereby mutual damage of the facets of neighbouring bars is prevented. For further handling, e.g. for the transport of the bars to an evaporation station for passivation layer deposition, provisions are made to keep the bars separated. Cleaving and the subsequent passivation coating can be carried out in-situ in a vacuum system to prevent facet contamination prior to applying the passivation.

公开(公告)号：DE69006353D1

公开(公告)日：1994-03-10

申请号：DE69006353

申请日：1990-05-25

Applicant: IBM

Inventor： BROOM RONALD F DR ,  GASSER MARCEL ,  HARDER CHRISTOPH DR ,  LATTA ERNST-EBERHARD DR ,  OOSENBRUG ALBERTUS ,  RICHARD HEINZ ,  VETTIGER PETER

IPC: B28D5/00 ,  H01L21/301 ,  H01S5/00 ,  H01S5/02 ,  H01L21/00

Abstract: A method for cleaving semiconductor wafers, or segments thereof, which comprises placing the wafer (11), provided with scribe lines (15) defining the planes where cleaving is to take place, inbetween a pair of flexible transport bands (12,13) and guiding it around a curved, large radius surface (21) thereby applying a bending moment. With a moment of sufficient magnitude, individual bars (22) are broken off the wafer as this is advanced, the bars having front- and rear-end facets. On cleaving, each bar, while still pressed against the curved surface, is automatically separated whereby mutual damage of the facets of neighbouring bars is prevented. For further handling, e.g. for the transport of the bars to an evaporation station for passivation layer deposition, provisions are made to keep the bars separated. Cleaving and the subsequent passivation coating can be carried out in-situ in a vacuum system to prevent facet contamination prior to applying the passivation.