公开(公告)号：AT464654T

公开(公告)日：2010-04-15

申请号：AT01972244

申请日：2001-09-27

Applicant: IBM

Inventor： CANAPERI DONALD ,  CHU JACK ,  D EMIC CHRISTOPHER ,  HUANG LIJUAN ,  OTT JOHN ,  WONG HON-SUM

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/338 ,  H01L21/76 ,  H01L27/12 ,  H01L29/778 ,  H01L29/786 ,  H01L29/812

Abstract: A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) is described incorporating growing epitaxial Si1-yGey layers on a semiconductor substrate, implanting hydrogen into a selected Si1-yGey layer to form a hydrogen-rich defective layer, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and separating two substrates at the hydrogen-rich defective layer. The separated substrates may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC.

公开(公告)号：DE60141843D1

公开(公告)日：2010-05-27

申请号：DE60141843

申请日：2001-09-27

Applicant: IBM

Inventor： CANAPERI DONALD ,  CHU JACK OON ,  D EMIC CHRISTOPHER ,  HUANG LIJUAN ,  OTT JOHN ALBERT ,  WONG HON-SUM PHILIP

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/338 ,  H01L21/76 ,  H01L27/12 ,  H01L29/778 ,  H01L29/786 ,  H01L29/812

Abstract: A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) is described incorporating growing epitaxial Si1-yGey layers on a semiconductor substrate, implanting hydrogen into a selected Si1-yGey layer to form a hydrogen-rich defective layer, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and separating two substrates at the hydrogen-rich defective layer. The separated substrates may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC.