公开(公告)号：EP1794781A4

公开(公告)日：2010-10-20

申请号：EP05728347

申请日：2005-03-17

Applicant: IBM

Inventor： CALLEGARI ALESSANDRO C ,  COHEN STEPHAN A ,  DOANY FUAD E

IPC: H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

CPC classification number: H01L21/76801 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02354 ,  H01L21/268 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  Y10T428/249978

公开(公告)号：WO2006022856A3

公开(公告)日：2007-01-11

申请号：PCT/US2005009112

申请日：2005-03-17

Applicant: IBM ,  CALLEGARI ALESSANDRO C ,  COHEN STEPHAN A ,  DOANY FUAD E

Inventor： CALLEGARI ALESSANDRO C ,  COHEN STEPHAN A ,  DOANY FUAD E

IPC: H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

CPC classification number: H01L21/76801 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02354 ,  H01L21/268 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  Y10T428/249978

Abstract: A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dieletric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.

Abstract translation: 与现有技术的电介质膜相比，包括具有改进的绝缘性能的Si，C，O和H原子（以下称为SiCOH）的电介质膜的制造方法，包括不经受本发明的深层超导体的现有技术的SiCOH介电膜， 紫色（DUV）。 改进的性能包括减少的电流泄漏，其在不影响（增加）SiCOH薄膜的介电常数的情况下实现。 根据本发明，通过使沉积的SiCOH电介质膜进行DUV激光退火，获得了表现出减小的电流泄漏和改进的可靠性的SiCOH电介质膜。 本发明的DUV激光退火工序可能从膜中除去弱结合的C，从而提高漏电流。

公开(公告)号：WO2012170142A3

公开(公告)日：2013-05-16

申请号：PCT/US2012037212

申请日：2012-05-10

Applicant: IBM ,  YANG CHIH-CHAO ,  COHEN STEPHAN A ,  BAOZHEN LI

Inventor： YANG CHIH-CHAO ,  COHEN STEPHAN A ,  BAOZHEN LI

IPC: H01L29/00 ,  H01L21/205 ,  H01L21/8238

CPC classification number: B82Y10/00 ,  H01L23/5252 ,  H01L29/413 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A switching device (140 or 240) including a first dielectric layer (102 or 207) having a first top surface (108 or 218), two conductive features (104, 106 or 214, 216) embedded in the first dielectric layer (102 or 207), each conductive feature (104, 106 or 214, 216) having a second top surface (110, 112 or 220, 222) that is substantially coplanar with the first top surface (108 or 218) of the first dielectric layer (102 or 207), and a set of discrete islands of a low diffusion mobility metal (114a-c or 204a-c) between the two conductive features (104, 106 or 214, 216). The discrete islands of the low diffusion mobility metal (114a-c or 204a-c) may be either on the first top surface (108) or embedded in the first dielectric layer (207). The electric conductivity across the two conductive features (104, 106 or 214, 216) of the switching device (140 or 240) increases when a prescribed voltage is applied to the two conductive features (104, 106 or 214, 216). A method of forming such a switching device (140 or 240) is also provided.

Abstract translation: 一种包括具有第一顶表面（108或218）的第一介电层（102或207），嵌入第一介电层（102或210）中的两个导电特征（104,106或214,216）的开关装置（140或240） 每个导电特征（104,106或214,216）具有与第一介电层（102）的第一顶表面（108或218）基本上共面的第二顶表面（110,112或220,222） 或207），以及一组在两个导电特征（104,106或214,216）之间的低扩散迁移率金属（114a-c或204a-c）的离散岛。 低扩散迁移率金属（114a-c或204a-c）的离散岛可以在第一顶表面（108）上或嵌入在第一介电层（207）中。 当规定的电压施加到两个导电特征（104,106或214,216）时，开关装置（140或240）的两个导电特征（104,106或214,216）的电导率增加。 还提供了一种形成这种开关装置（140或240）的方法。

公开(公告)号：GB2504879B

公开(公告)日：2014-09-10

申请号：GB201319512

申请日：2012-05-10

Applicant: IBM

Inventor： YANG CHIH-CHAO ,  COHEN STEPHAN A ,  BAOZHEN LI

IPC: H01L23/525

Abstract: A switching device including a first dielectric layer having a first top surface, two conductive features embedded in the first dielectric layer, each conductive feature having a second top surface that is substantially coplanar with the first top surface of the first dielectric layer, and a set of discrete islands of a low diffusion mobility metal between the two conductive features. The discrete islands of the low diffusion mobility metal may be either on the first top surface or embedded in the first dielectric layer. The electric conductivity across the two conductive features of the switching device increases when a prescribed voltage is applied to the two conductive features. A method of forming such a switching device is also provided.

公开(公告)号：DE112012001656T5

公开(公告)日：2014-01-16

申请号：DE112012001656

申请日：2012-05-10

Applicant: IBM

Inventor： COHEN STEPHAN A ,  LI BAOZHEN ,  YANG CHIH-CHAO

IPC: H01L29/00 ,  H01L21/205 ,  H01L21/8238

Abstract: Eine Schalteinheit (140 oder 240), umfassend eine erste dielektrische Schicht (102 oder 207), die eine erste Oberfläche (108 oder 218) hat, zwei leitfähige Strukturelemente (104, 106 oder 214, 216), die in die erste dielektrische Schicht (102 oder 207) eingebettet sind, wobei jedes leitfähige Strukturelement (104, 106 oder 214, 216) eine zweite Oberfläche (110, 112 oder 220, 222) hat, die im Wesentlichen koplanar zur ersten Oberfläche (108 oder 218) der ersten dielektrischen Schicht (102 oder 207) ist, und einen Satz einzelner Inseln aus einem Metall mit niedriger Diffusionsmobilität (114a–c oder 204a–c) zwischen den zwei leitfähigen Strukturelementen (104, 106 oder 214, 216). Die einzelnen Inseln aus dem Metall mit niedriger Diffusionsmobilität (114a–c oder 204a–c) können entweder auf der ersten Oberfläche (108) liegen oder in die erste dielektrische Schicht (207) eingebettet sein. Die elektrische Leitfähigkeit durch die zwei leitfähigen Strukturelemente (104, 106 oder 214, 216) der Schalteinheit (140 oder 240) nimmt zu, wenn eine vorgeschriebene Spannung an die zwei leitfähigen Strukturelemente (104, 106 oder 214, 216) angelegt wird. Auch ein Verfahren zum Bilden solch einer Schalteinheit (140 oder 240) wird bereitgestellt.

公开(公告)号：GB2504879A

公开(公告)日：2014-02-12

申请号：GB201319512

申请日：2012-05-10

Applicant: IBM

Inventor： YANG CHIH-CHAO ,  COHEN STEPHAN A ,  BAOZHEN LI

IPC: H01L23/525

Abstract: A switching device (140 or 240) including a first dielectric layer (102 or 207) having a first top surface (108 or 218), two conductive features (104, 106 or 214, 216) embedded in the first dielectric layer (102 or 207), each conductive feature (104, 106 or 214, 216) having a second top surface (110, 112 or 220, 222) that is substantially coplanar with the first top surface (108 or 218) of the first dielectric layer (102 or 207), and a set of discrete islands of a low diffusion mobility metal (114a-c or 204a-c) between the two conductive features (104, 106 or 214, 216). The discrete islands of the low diffusion mobility metal (114a-c or 204a-c) may be either on the first top surface (108) or embedded in the first dielectric layer (207). The electric conductivity across the two conductive features (104, 106 or 214, 216) of the switching device (140 or 240) increases when a prescribed voltage is applied to the two conductive features (104, 106 or 214, 216). A method of forming such a switching device (140 or 240) is also provided.