公开(公告)号：EP2283513A4

公开(公告)日：2012-11-14

申请号：EP08823312

申请日：2008-09-23

Applicant: IBM

Inventor： YANG CHIH-CHAO ,  GIGNAC LYNNE M

IPC: H01L21/02 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/53238 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2342743A4

公开(公告)日：2012-05-16

申请号：EP09819613

申请日：2009-07-21

Applicant: IBM

Inventor： GIGNAC LYNNE M ,  HU CHAO-KUN ,  MITTAL SURBHI ,  YANG CHIH-CHAO

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L23/53238 ,  H01L21/02362 ,  H01L21/76849 ,  H01L21/76865 ,  H01L21/76868 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：WO2009139962A3

公开(公告)日：2010-01-07

申请号：PCT/US2009038380

申请日：2009-03-26

Applicant: IBM ,  GIGNAC LYNNE M ,  HU CHAO-KUN ,  YANG CHIH-CHAO

Inventor： GIGNAC LYNNE M ,  HU CHAO-KUN ,  YANG CHIH-CHAO

IPC: H01L23/52 ,  H01L23/525 ,  H01L23/532

CPC classification number: H01L23/53295 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76844 ,  H01L21/76888 ,  H01L23/5226 ,  H01L23/5256 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure. The fuse structure includes a conductive material embedded within an interconnect dielectric in which the upper surface of the conductive material has a high concentration of oxygen present therein. A dielectric capping layer is located atop the dielectric material and the conductive material. The presence of the surface oxide layer at the interface between the conductive material and the dielectric capping layer degrades the adhesion between the conductive material and the dielectric capping layer. As such, when current is provided to the fuse structure electromigration of the conductive material occurs and over time an opening is formed in the conductive material blowing the fuse element.

Abstract translation: 提供了一种半导体结构，其包括互连结构和位于相同互连级别内的不同区域中的熔丝结构。 互连结构具有高的电迁移率，而与互连结构相比，熔丝结构具有较低的电迁移电阻。 熔丝结构包括嵌入在互连电介质内的导电材料，其中导电材料的上表面具有存在于其中的高浓度的氧。 电介质覆盖层位于电介质材料和导电材料的顶部。 在导电材料和电介质覆盖层之间的界面处的表面氧化物层的存在降低了导电材料和电介质覆盖层之间的粘合性。 因此，当电流提供给熔丝结构时，导电材料的电迁移发生，并且随着时间的推移，在引导熔丝元件的导电材料中形成开口。

公开(公告)号：SG188903A1

公开(公告)日：2013-04-30

申请号：SG2013019146

申请日：2009-07-21

Applicant: IBM

Inventor： GIGNAC LYNNE M ,  HU CHAO-KUN ,  MITTAL SURBHI ,  YANG CHIH-CHAO

Abstract: DISCONTINUOUS/NON-UNIFORM METAL CAP STRUCTURE AND PROCESS FOR INTERCONNECT INTEGRATIONAbstractAn interconnect structure including a noble metal-containing cap that is present at least on some portion of an upper surface of at least one conductive material that is embedded within an interconnect dielectric material is provided. In one embodiment, the noble metal-containing cap is discontinuous, e.g., exists as nuclei or islands on the surface of the at least one conductive material. In another embodiment, the noble metal-containing cap has a non-uniform thickness across the surface of the at least one conductive material.Fig. 4E

公开(公告)号：GB2365216B

公开(公告)日：2004-10-13

申请号：GB0102506

申请日：2001-02-01

Applicant: IBM

Inventor： COHEN STEPHEN ALAN ,  DALTON TIMOTHY JOSEPH ,  FITZSIMMONS JOHN ANTHONY ,  GATES STEPHEN MCCONNELL ,  GIGNAC LYNNE M ,  JAMISON PAUL CHARLES ,  LEE KANG-WOOK ,  PURUSHOTHAMAN SAMPATH ,  RESTAINO DARRYL D ,  SIMONYI EVA ,  WILDMAN HORATIO SEYMOUR

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/314

Abstract: A semiconductor device containing a diffusion barrier layer is provided. The semiconductor device includes at least a semiconductor substrate containing conductive metal elements; and, a diffusion barrier layer applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer having an upper surface and a lower surface and a central portion, and being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is more concentrated near the lower and upper surfaces of the diffusion barrier layer as compared to the central portion of the diffusion barrier layer. Methods for making the semiconductor devices are also provided.

公开(公告)号：GB2365216A

公开(公告)日：2002-02-13

申请号：GB0102506

申请日：2001-02-01

Applicant: IBM

Inventor： COHEN STEPHEN ALAN ,  DALTON TIMOTHY JOSEPH ,  FITZSIMMONS JOHN ANTHONY ,  GATES STEPHEN MCCONNELL ,  GIGNAC LYNNE M ,  JAMISON PAUL CHARLES ,  LEE KANG-WOOK ,  PURUSHOTHAMAN SAMPATH ,  RESTAINO DARRYL D ,  SIMONYI EVA ,  WILDMAN HORATIO SEYMOUR

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/314

Abstract: A semiconductor device contains a diffusion barrier layer 14a, 14b, 14c. The semiconductor device preferably includes a semiconductor substrate 8 and a dielectric layer 10 containing conductive metal elements 12; and the diffusion barrier layer 14 is applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is typically more concentrated near the lower and upper surfaces 14a, 14b of the diffusion barrier layer as compared to the central portion 14c of the diffusion barrier layer. It is found that this process leads to improved adhesion of the diffusion barrier layer, but without raising the dielectric constant too much. The diffusion barrier layer may also include oxygen. The diffusion barrier layer may be formed by atomic layer deposition or by PECVD.

公开(公告)号：BRPI0914051A2

公开(公告)日：2015-11-03

申请号：BRPI0914051

申请日：2009-07-21

Applicant: IBM

Inventor： HU CHAO-KUN ,  YANG CHIN-CHAO ,  GIGNAC LYNNE M ,  MITTAL SURBHI

IPC: H01L21/70 ,  H01L21/00

公开(公告)号：IE20010123A1

公开(公告)日：2001-09-19

申请号：IE20010123

申请日：2001-02-09

Applicant: IBM

Inventor： COHEN STEPHEN ALAN ,  PURUSHOTHAMAN SAMPATH ,  GIGNAC LYNNE M ,  GATES STEPHEN MCCONNELL ,  SIMONYI EVA ,  WILDMAN HORATIO SEYMOUR ,  RESTAINO DARRYL D ,  DALTON TIMOTHY JOSEPH ,  FITZSIMMONS JOHN ANTHONY ,  JAMISON PAUL CHARLES ,  LEE KANG-WOOK

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/223

Abstract: A semiconductor device containing a diffusion barrier layer is provided. The semiconductor device includes at least a semiconductor substrate containing conductive metal elements; and, a diffusion layer applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer having an upper surface and a lower surface and a central portion, and being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is more concentrated near the lower and upper surfaces of the diffusion barrier layer as compared to the central portion of the diffusion barrier layer. Methods for making the semiconductor devices are also provided.