公开(公告)号：JP2000101012A

公开(公告)日：2000-04-07

申请号：JP21489799

申请日：1999-07-29

Applicant: IBM

Inventor： BLASI CHARLES J ,  DAS GOBINDA ,  MOTIKA FRANCO

IPC: H01L23/12 ,  G01R1/067 ,  H01L23/50 ,  H01L23/64 ,  H01L25/00 ,  H01L25/16 ,  H05K1/02

Abstract: PROBLEM TO BE SOLVED: To provide a reformed-type structure which raises the effect of a decoupling capacitor by reducing the influence of the inductance concerned with the decoupling capacitor. SOLUTION: A multilayer ceramic module includes a multilayer ceramic substrate 20 having upside and downside, at least one semiconductor chip 25 attached to the upside of the substrate, a plurality of module pins 23 projected from the downside of the substrate, and at least one decoupling capacitor 21 attached to the substrate between adjacent module pins under the substrate.

公开(公告)号：CA1090005A

公开(公告)日：1980-11-18

申请号：CA281576

申请日：1977-06-28

Applicant: IBM

Inventor： BEYER KLAUS D ,  DAS GOBINDA ,  POPONIAK MICHAEL R ,  YEH TSU-HSING

IPC: H01L29/73 ,  H01L21/265 ,  H01L21/28 ,  H01L21/322 ,  H01L21/331 ,  H01L21/70

Abstract: SEMICONDUCTOR FABRICATION METHOD FOR IMPROVED DEVICE YIELD A method for fabricating bipolar semiconductor devices of large scale integration in which the formation of pipes, which result in shorts or leakages between two conductivity types of the semiconductor devices, is minimized. Prior to forming the emitters in the bipolar transistors, nucleation sites for crystallographic defects such as dislocation loops are formed in the base region near its surface. The emitters are then formed in base regions containing the nucleation sites and the sites are converted into electrically harmless dislocation loops during diffusion of the emitter impurity. Preferably, the nucleation sites are formed by implanting non-doping impurities, such as helium, neon, argon, krypton, xenon, silicon, and oxygen.

公开(公告)号：DE2728985A1

公开(公告)日：1978-01-05

申请号：DE2728985

申请日：1977-06-28

Applicant: IBM

Inventor： BEYER KLAUS DIETRICH ,  DAS GOBINDA ,  POPONIAK MICHAEL ROBERT ,  YEH TSU-HSING

IPC: H01L29/73 ,  H01L21/265 ,  H01L21/28 ,  H01L21/322 ,  H01L21/331 ,  H01L29/32

Abstract: A method for fabricating bipolar semiconductor devices of large scale integration in which the formation of pipes, which result in shorts or leakages between two conductivity types of the semiconductor devices, is minimized. Prior to forming the emitters in the bipolar transistors, nucleation sites for crystallographic defects such as dislocation loops are formed in the base region near its surface. The emitters are then formed in base regions containing the nucleation sites and the sites are converted into electrically harmless dislocation loops during diffusion of the emitter impurity. Preferably, the nucleation sites are formed by implanting non-doping impurities, such as helium, neon, argon, krypton, xenon, silicon, and oxygen.

公开(公告)号：DE69026118T2

公开(公告)日：1996-10-02

申请号：DE69026118

申请日：1990-11-21

Applicant: IBM

Inventor： DAS GOBINDA ,  VIAU THOMAS ,  BERNDLMAIER ERICH

IPC: H01L21/60 ,  H01L21/603 ,  H01L23/485

公开(公告)号：DE69026118D1

公开(公告)日：1996-04-25

申请号：DE69026118

申请日：1990-11-21

Applicant: IBM

Inventor： DAS GOBINDA ,  VIAU THOMAS ,  BERNDLMAIER ERICH

IPC: H01L21/60 ,  H01L21/603 ,  H01L23/485

公开(公告)号：FR2357065A1

公开(公告)日：1978-01-27

申请号：FR7717613

申请日：1977-06-02

Applicant: IBM

Inventor： BEYER KLAUS D ,  DAS GOBINDA ,  POPONIAK MICHAEL R ,  YEH TSU-HSING

IPC: H01L29/73 ,  H01L21/265 ,  H01L21/28 ,  H01L21/322 ,  H01L21/331

Abstract: A method for fabricating bipolar semiconductor devices of large scale integration in which the formation of pipes, which result in shorts or leakages between two conductivity types of the semiconductor devices, is minimized. Prior to forming the emitters in the bipolar transistors, nucleation sites for crystallographic defects such as dislocation loops are formed in the base region near its surface. The emitters are then formed in base regions containing the nucleation sites and the sites are converted into electrically harmless dislocation loops during diffusion of the emitter impurity. Preferably, the nucleation sites are formed by implanting non-doping impurities, such as helium, neon, argon, krypton, xenon, silicon, and oxygen.