公开(公告)号：SG104319A1

公开(公告)日：2004-06-21

申请号：SG200202503

申请日：2002-04-25

Applicant: IBM

Inventor： FARIBORZ ASSADERAGHI ,  TZE-CHIANG CHEN ,  K PAUL MILLER ,  EDWARD JOSEPH NOWAK ,  GHAVAM G SHAHIDI

IPC: H01L21/336 ,  H01L21/28 ,  H01L29/41 ,  H01L29/78 ,  H01L29/786 ,  H01L21/84

Abstract: Short channel effects are effectively suppressed by steep impurity concentration gradients which can be placed with improved accuracy of location and geometry while relaxing process tolerances by implanting impurities in a polysilicon seed adjacent a conduction channel of a transistor and diffusing impurities therefrom into the conduction channel. The polysilicon seed also allows the epitaxial growth of polysilicon source/drain contacts therefrom having a configuration which minimizes current density and path length therein while providing further mechanical advantages.

公开(公告)号：SG97204A1

公开(公告)日：2003-07-18

申请号：SG200106328

申请日：2001-10-12

Applicant: IBM

Inventor： JAMES W ADKISSON ,  PAUL D AGNELLO ,  ARNE W BALLANTINE ,  RAMA DIVAKARUNI ,  ERIN JONES ,  EDWARD JOSEPH NOWAK ,  JED H RANKIN

IPC: H01L29/161 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/08 ,  H01L27/088 ,  H01L27/092 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L29/78

Abstract: A double gated silicon-on-insulator (SOI) MOSFET is fabricated by forming epitaxially grown channels, followed by a damascene gate. The double gated MOSFET features narrow channels, which increases current drive per layout width and provides low out conductance.