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Patent Agency Ranking
公开(公告)号：WO2007096359A3
公开(公告)日：2008-01-10
申请号：PCT/EP2007051622
申请日：2007-02-20
Applicant: IBM , IBM UK , HEDRICK JAMES LUPTON , FROMMER JANE ELIZABETH , WINDELN JOHANNES , DUERIG URS , LEE VICTOR YEE-WAY , GOTSMANN BERND , MILLER ROBERT DENNIS , HAGBERG ERIK , MAGBITANG TEDDIE , KNOLL ARMIN , PRATT RUSSELL CLAYTON , WADE CHARLES
Inventor： HEDRICK JAMES LUPTON , FROMMER JANE ELIZABETH , WINDELN JOHANNES , DUERIG URS , LEE VICTOR YEE-WAY , GOTSMANN BERND , MILLER ROBERT DENNIS , HAGBERG ERIK , MAGBITANG TEDDIE , KNOLL ARMIN , PRATT RUSSELL CLAYTON , WADE CHARLES
CPC classification number: G11B9/149 , B82Y10/00 , C08G73/101 , C08G73/1046 , C08G73/105 , C08G73/1053 , C08G73/1064 , G11B9/1409 , G11B9/1454 , G11B11/007 , G11B2005/0021 , Y10T428/265 , Y10T428/31721
Abstract: An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyimide oligomers are used as the recording layers in atomic force data storage device, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles. Additionally, the cross-linked polyimide oligomers are suitable for use in nano-scale imaging.
Abstract translation: 提出了一种用于设计用于纳米级热机械存储装置的聚合物层的方法。 交联聚酰亚胺低聚物用作原子力数据存储装置中的记录层，与先前报道的交联和线性聚合物相比，显着提高了性能。 可以调整聚酰亚胺低聚物的交联以匹配读写擦除周期中所需的热和强度参数。 另外，交联聚酰亚胺低聚物适用于纳米级成像。
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公开(公告)号：AT435255T
公开(公告)日：2009-07-15
申请号：AT07726443
申请日：2007-02-20
Applicant: IBM
Inventor： HEDRICK JAMES LUPTON , FROMMER JANE ELIZABETH , WINDELN JOHANNES , DUERIG URS , LEE VICTOR YEE-WAY , GOTSMANN BERND , MILLER ROBERT DENNIS , HAGBERG ERIK , MAGBITANG TEDDIE , KNOLL ARMIN , PRATT RUSSELL CLAYTON , WADE CHARLES
Abstract: An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyimide oligomers are used as the recording layers in atomic force data storage device, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles. Additionally, the cross-linked polyimide oligomers are suitable for use in nano-scale imaging.
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公开(公告)号：DE602007001458D1
公开(公告)日：2009-08-13
申请号：DE602007001458
申请日：2007-02-20
Applicant: IBM
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公开(公告)号：DE69021284T2
公开(公告)日：1996-04-18
申请号：DE69021284
申请日：1990-05-21
Applicant: IBM
Inventor： ARNETT PATRICK CLINTON , BRYANT ANDRES , FOSTER JOHN STUART , FROMMER JANE ELIZABETH , IWATA JON ASAO CARY
IPC: G01Q60/00 , G03F1/00 , G03F7/20 , H01J37/317 , H01L21/027 , H01L21/30
Abstract: A high resolution lithographic mask having a desired pattern is generated and used to replicate the pattern onto a film in a one-step process. A film of phase-changeable material in one state is provided on a conductive substrate. By scanning tunneling microscope techniques, the state and thereby the conductivity or other property of the material in selected areas (a min -c min ) of the film is changed to a second state to provide from the film a mask (19) having a desired pattern defined by crystalline areas. Amorphous material need not be removed from the mask. To replicate the pattern on another film (16), the latter is placed on another conductive substrate (17); the mask is positioned (21p-21r) with its patterned side within electron tunneling distance (19p-19r) of said other film; and the pattern is replicated in a single step by applying a voltage between the mask and other film. The voltage charge on said mask is positive and negative on said other film to cause current to flow in the crystalline areas of said mask and, by electron flow from said film to the mask, eliminate backscattering and insure high resolution. As the state changes (e.g., from crystalline to amorphous) in the pattern areas of said other film, conductivity in the crystalline areas will progressively decrease and, by causing a corresponding reduction in current flow in the crystalline areas, minimize the risk of undesired broadening of exposed areas of said other film.
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公开(公告)号：DE69021284D1
公开(公告)日：1995-09-07
申请号：DE69021284
申请日：1990-05-21
Applicant: IBM
Inventor： ARNETT PATRICK CLINTON , BRYANT ANDRES , FOSTER JOHN STUART , FROMMER JANE ELIZABETH , IWATA JON ASAO CARY
IPC: G01Q60/00 , G03F1/00 , G03F7/20 , H01J37/317 , H01L21/027 , H01L21/30
Abstract: A high resolution lithographic mask having a desired pattern is generated and used to replicate the pattern onto a film in a one-step process. A film of phase-changeable material in one state is provided on a conductive substrate. By scanning tunneling microscope techniques, the state and thereby the conductivity or other property of the material in selected areas (a min -c min ) of the film is changed to a second state to provide from the film a mask (19) having a desired pattern defined by crystalline areas. Amorphous material need not be removed from the mask. To replicate the pattern on another film (16), the latter is placed on another conductive substrate (17); the mask is positioned (21p-21r) with its patterned side within electron tunneling distance (19p-19r) of said other film; and the pattern is replicated in a single step by applying a voltage between the mask and other film. The voltage charge on said mask is positive and negative on said other film to cause current to flow in the crystalline areas of said mask and, by electron flow from said film to the mask, eliminate backscattering and insure high resolution. As the state changes (e.g., from crystalline to amorphous) in the pattern areas of said other film, conductivity in the crystalline areas will progressively decrease and, by causing a corresponding reduction in current flow in the crystalline areas, minimize the risk of undesired broadening of exposed areas of said other film.
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