公开(公告)号：EP2013659A4

公开(公告)日：2011-12-07

申请号：EP07760816

申请日：2007-04-18

Applicant: IBM

Inventor： CHEN KUANG-JUNG ,  KHOJASTEH MAHMOUD ,  KWONG RANEE WAI-LING ,  LAWSON MARGARET C ,  LI WENJIE ,  PATEL KAUSHAL S ,  VARANASI PUSHKARA R

IPC: G03F7/09 ,  C08F220/28

CPC classification number: G03F7/091 ,  C08F220/28 ,  C08F222/40 ,  C08F232/08 ,  Y10S430/151

公开(公告)号：JP2009009131A

公开(公告)日：2009-01-15

申请号：JP2008162996

申请日：2008-06-23

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： HUANG WU-SONG ,  JAMES J BUCCHIGNANO ,  VARANASI PUSHKARA R ,  YU ROY R

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/031 ,  G03F7/38 ,  H01L21/027

CPC classification number: G03F7/0045 ,  G03F7/0392 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126 ,  Y10S430/143

Abstract: PROBLEM TO BE SOLVED: To provide a condensed aromatic structure and a method for photolithographic application.
SOLUTION: A resist composition and a method for forming a patterned feature on a substrate are provided. The composition comprises a molecular glass having at least one condensed polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, and a photosensitive acid generator. The method includes providing a composition including a photosensitive acid generator and a molecular glass having at least one condensed polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, forming a film of the composition on the substrate, patternwise imaging the film, wherein at least one region of the film is exposed to radiation or a beam of particles, resulting in production of an acid catalyst in the exposed region, baking the film, developing the film, resulting in removal of base-soluble exposed regions, wherein a patterned feature from the film remains following the removal.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供冷凝芳族结构和光刻应用的方法。 提供了一种抗蚀剂组合物和在基材上形成图案化特征的方法。 该组合物包含具有至少一个稠合多环部分和至少一个被酸不稳定保护基团保护的碱可溶官能团的分子玻璃和光敏酸产生剂。 该方法包括提供包含光敏酸产生剂和具有至少一个稠合多环部分的分子玻璃和至少一个被酸不稳定保护基团保护的碱可溶官能团的组合物，在该基质上形成该组合物的膜，图案成像 所述膜，其中所述膜的至少一个区域暴露于辐射或颗粒束，导致在所述暴露区域中产生酸催化剂，烘烤所述膜，显影所述膜，导致去除可溶于碱的暴露区域 ，其中来自膜的图案化特征在去除之后保持不变。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2005196209A

公开(公告)日：2005-07-21

申请号：JP2005000960

申请日：2005-01-05

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： LI WENJIE ,  VARANASI PUSHKARA R

IPC: C08F220/18 ,  C08F220/28 ,  C08F220/38 ,  C08F232/04 ,  G03C1/76 ,  G03F7/004 ,  G03F7/039 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/0397 ,  G03F7/0046 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111

Abstract: PROBLEM TO BE SOLVED: To provide a positive photoresist composition that exhibits excellent solubility in an aqueous base developer, and its usage.
SOLUTION: The positive photoresist composition contains a radiation sensitive acid generator and a polymer, wherein this polymer can contain a first repeating unit derived from a sulfonamide monomer containing a fluorosulfonamido functional group and a second repeating unit that can contain an acid-labile pendant moiety. This positive photoresist composition can further contain at least one selected from a solvent, a quenching agent and a surfactant. A pattern formed photoresist layer produced from this positive photoresist composition is formed on a substrate, this positive photoresist layer is exposed with an irradiation pattern for imaging, and parts exposed with the irradiation pattern for imaging in the positive photoresist layer are removed, whereby the corresponding pattern formed substrate can be exposed and is prepared for subsequent processing of semiconductor device production.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供在碱性显影剂水溶液中表现出优异的溶解性的正性光致抗蚀剂组合物及其用途。 解决方案：正性光致抗蚀剂组合物含有辐射敏感性酸产生剂和聚合物，其中该聚合物可以含有源自含有氟磺酰氨基官能团的磺酰胺单体的第一重复单元和可含有酸不稳定性的第二重复单元 吊坠部分。 该正性光致抗蚀剂组合物可以进一步含有选自溶剂，猝灭剂和表面活性剂中的至少一种。 由该正性光致抗蚀剂组合物形成的图案形成的光致抗蚀剂层形成在基板上，利用用于成像的照射图案曝光该正性光致抗蚀剂层，除去在正性光致抗蚀剂层中用于成像的照射图案的部分， 图案形成的基板可以被曝光并且准备用于半导体器件生产的后续处理。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：WO2011022221A3

公开(公告)日：2011-06-30

申请号：PCT/US2010044631

申请日：2010-08-06

Applicant: IBM ,  HUANG WU-SONG ,  LIU SEN ,  LI WAI-KIN ,  GOLDFARB DARIO L ,  VYKLICKY LIBOR ,  GLODDE MARTIN ,  VARANASI PUSHKARA R

Inventor： HUANG WU-SONG ,  LIU SEN ,  LI WAI-KIN ,  GOLDFARB DARIO L ,  VYKLICKY LIBOR ,  GLODDE MARTIN ,  VARANASI PUSHKARA R

IPC: C09B67/10 ,  C08J5/18 ,  C08K5/17 ,  C08L63/00 ,  H01L21/02

CPC classification number: G03F7/091 ,  G03F9/7026

Abstract: A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine -based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near- infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

Abstract translation: 包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及含有固体近红外吸收膜的涂层的微电子基板以及在近红外线吸收膜位于微电子基板之间的情况下图案化涂布在微电子基板上的光刻胶层的方法 和光刻胶膜。

公开(公告)号：WO2007121456A3

公开(公告)日：2008-03-27

申请号：PCT/US2007066841

申请日：2007-04-18

Applicant: IBM ,  CHEN KUANG-JUNG ,  KHOJASTEH MAHMOUD ,  KWONG RANEE WAI-LING ,  LAWSON MARGARET C ,  LI WENJIE ,  PATEL KAUSHAL S ,  VARANASI PUSHKARA R

Inventor： CHEN KUANG-JUNG ,  KHOJASTEH MAHMOUD ,  KWONG RANEE WAI-LING ,  LAWSON MARGARET C ,  LI WENJIE ,  PATEL KAUSHAL S ,  VARANASI PUSHKARA R

IPC: G03C1/00

CPC classification number: G03F7/091 ,  C08F220/28 ,  C08F222/40 ,  C08F232/08 ,  Y10S430/151

Abstract: The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.

Abstract translation: 本发明公开了一种用于在基材表面和正性光致抗蚀剂组合物之间施加的抗反射涂料组合物。 抗反射涂料组合物可在含水碱性显影剂中显影。 抗反射涂料组合物包括聚合物，其包含至少一种含有一个或多个选自内酯，马来酰亚胺和N-烷基马来酰亚胺的部分的单体单元; 和含有一个或多个吸收部分的至少一个单体单元。 聚合物不包含酸不稳定基团。 本发明还公开了一种通过在光刻中使用本发明的抗反射涂料组合物来形成和转印浮雕图像的方法。

公开(公告)号：WO2009091704A2

公开(公告)日：2009-07-23

申请号：PCT/US2009030792

申请日：2009-01-13

Applicant: IBM ,  LI WENJIE ,  HUANG WU-SONG S ,  VARANASI PUSHKARA R ,  LIU SEN ,  POPOVA IRENE Y

Inventor： LI WENJIE ,  HUANG WU-SONG S ,  VARANASI PUSHKARA R ,  LIU SEN ,  POPOVA IRENE Y

IPC: G03F7/004 ,  C07C317/14 ,  G03F7/26

CPC classification number: C07C309/59 ,  C07C25/18 ,  C07C309/40 ,  C07C381/12 ,  G03F7/0045 ,  G03F7/0397

Abstract: Fluorine-free photoacid generators and photoresist compositions containing fluorine-free photoacid generators are enabled as alternatives to PFOS/PFAS photoacid generator-containing photoresists. The photoacid generators are characterized by the presence of a fluorine-free aromatic sulfonate anionic component having one or more electron withdrawing groups. The photoacid generators preferably contain a fluorine-free onium cationic component, more preferably a sulfonium cationic component. The photoresist compositions preferably contain an acid sensitive imaging polymer having a lactone functionality. The compositions are especially useful for forming material patterns using 193nm (ArF) imaging radiation.

Abstract translation: 含有无氟光致酸发生剂的无氟光致酸发生剂和光致抗蚀剂组合物可用作具有PFOS / PFAS光致酸产生剂的光致抗蚀剂的替代品。 光酸产生剂的特征在于存在具有一个或多个吸电子基团的无氟芳族磺酸盐阴离子组分。 光酸产生剂优选含有无氟鎓阳离子成分，更优选含有阳离子锍组分。 光致抗蚀剂组合物优选含有具有内酯官能度的酸敏感成像聚合物。 组合物特别适用于使用193nm（ArF）成像辐射形成材料图案。

公开(公告)号：JP2008003592A

公开(公告)日：2008-01-10

申请号：JP2007159967

申请日：2007-06-18

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： HUANG WU-SONG ,  LI WENJIE ,  VARANASI PUSHKARA R

IPC: G03F7/11 ,  C08F222/18 ,  H01L21/027

CPC classification number: G03F7/091 ,  G03F7/0046 ,  G03F7/0752 ,  Y10S438/952

Abstract: PROBLEM TO BE SOLVED: To provide a composition suitable for use as a top surface antireflection coating and barrier layer for 193 nm dry lithography. SOLUTION: The composition suitable for use as a top surface antireflection coating and barrier layer for 193 nm lithography is soluble in an aqueous base solution and has a low refractive index at 193 nm. The composition contains a polymer comprising a main chain and a fluorinated half ester moiety and soluble in an aqueous base solution. The fluorinated half ester moiety is a pendant group from the main chain. The present invention also discloses a method for forming a patterned layer on a substrate by using the composition in lithography. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供适合用作193nm干光刻的顶表面抗反射涂层和阻挡层的组合物。 解决方案：适合用作193nm光刻的顶表面抗反射涂层和阻挡层的组合物可溶于碱性水溶液中，并且在193nm具有低折射率。 组合物含有包含主链和氟化半酯部分并且可溶于碱性水溶液的聚合物。 氟化半酯部分是来自主链的侧基。 本发明还公开了一种通过在光刻中使用该组合物在衬底上形成图案层的方法。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007017976A

公开(公告)日：2007-01-25

申请号：JP2006185110

申请日：2006-07-05

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： HUANG WU-SONG S ,  TEMPLE KAREN ,  VARANASI PUSHKARA R

IPC: G03F7/11 ,  C08F28/06 ,  H01L21/027

CPC classification number: G03F7/094 ,  G06F17/5072

Abstract: PROBLEM TO BE SOLVED: To provide an underlayer composition compatible with a typical photoresist and having optical properties to be used as an ARC (antireflection coating).
SOLUTION: The composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The composition comprises a polymer containing a heterocyclic aromatic moiety. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The composition provides a planarizing underlayer having outstanding optical properties, mechanical properties, and etching selectivity properties. The present invention also encompasses a lithographic structure containing the underlayer prepared from the above composition, a method of making the lithographic structure, and a method of using the lithographic structure to pattern an underlying material layer on a substrate.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供与典型光致抗蚀剂相容并具有用作ARC（抗反射涂层）的光学性质的底层组合物。 公开了适用于多层光刻工艺中的平坦化底层的组合物。 组合物包含含有杂环芳族部分的聚合物。 另一方面，组合物还包含酸生成剂。 在另一方面，组合物还包含交联剂。 该组合物提供具有突出的光学性能，机械性能和蚀刻选择性的平坦化底层。 本发明还包括含有由上述组合物制备的底层的光刻结构，制备光刻结构的方法，以及使用该光刻结构在基底上图形化下层材料层的方法。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005222059A

公开(公告)日：2005-08-18

申请号：JP2005028828

申请日：2005-02-04

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： WENJII LEE ,  VARANASI PUSHKARA R ,  HAMAD ALYSSANDREA H

IPC: G03F7/004 ,  G03C1/76 ,  G03F7/033 ,  G03F7/038 ,  H01L21/027

CPC classification number: G03F7/0382 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/115

Abstract: PROBLEM TO BE SOLVED: To provide a negative photoresist, an exposed photoresist of which is free of swelling and/or micro-bridging when dissolved in a developer solution, in order to avoid limit of spatial resolution in photolithography use.
SOLUTION: A negative photoresist composition is provided which includes: a radiation sensitive acid generator; an additive; and a resist polymer derived from at least a first monomer including a hydroxyl group. The first monomer may be acidic or approximately pH neutral. The resist polymer may be further derived from a second monomer having an aqueous base soluble moiety. The additive has a moiety typified by an N-alkoxymethyl group and may include one or more alicyclic structures. The acid generator is adapted to generate an acid upon exposure to radiation. The resist polymer is adapted to chemically react with the additive in the presence of the acid to generate a non-crosslinking reaction product that is insoluble in an aqueous alkaline developer solution.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供负光致抗蚀剂，当曝光的光致抗蚀剂溶解在显影剂溶液中时，其曝光的光致抗蚀剂不溶胀和/或微桥接，以避免光刻用途中的空间分辨率的限制。 解决方案：提供负性光致抗蚀剂组合物，其包括：辐射敏感酸产生剂; 添加剂 以及衍生自至少包含羟基的第一单体的抗蚀剂聚合物。 第一单体可以是酸性的或大致pH中性的。 抗蚀剂聚合物可以进一步衍生自具有碱性水溶性部分的第二单体。 添加剂具有以N-烷氧基甲基为代表的部分，并且可以包括一种或多种脂环族结构。 酸产生器适于在暴露于辐射时产生酸。 抗蚀剂聚合物适于在酸存在下与添加剂发生化学反应以产生不溶于碱性显影剂水溶液的非交联反应产物。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：GB2484880B

公开(公告)日：2012-09-26

申请号：GB201203472

申请日：2010-08-06

Applicant: IBM

Inventor： HUANG WU-SONG ,  LIU SEN ,  LI WAI-KIN ,  GOLDFARB DARIO L ,  VYKLICKY LIBOR ,  GLODDE MARTIN ,  VARANASI PUSHKARA R

IPC: G03F7/09 ,  G03F9/00