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公开(公告)号：EP1546813A4
公开(公告)日：2006-08-30
申请号：EP03815294
申请日：2003-09-11
Applicant: IBM
Inventor： KHOJASTEH MAHMOUD M , WONG RANEE W , CHEN KUANG-JUNG , VARANASI PUSHKARA RAO , ALLEN ROBERT D , BROCK PHILLIP , HOULE FRANCES , SOORIYAKUMARAN RATNAM
CPC classification number: G03F7/094 , G03F7/0397 , G03F7/0758 , Y10S430/106 , Y10S430/111 , Y10S430/115
Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.
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2.发明专利Method for forming feature of 50 nm or less half-pitch width by using chemically amplified resist imaging 有权通过使用化学放大电阻成像形成50纳米或更少的半平面宽度的特征的方法
公开(公告)号：JP2005018063A
公开(公告)日：2005-01-20
申请号：JP2004183531
申请日：2004-06-22
Applicant: Internatl Business Mach Corp
, インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation Inventor： MEDEIROS DAVID R , HUANG WU-SONG , WALLRAFF GREGORY M , HINSBERG BILL , HOULE FRANCES
Abstract: PROBLEM TO BE SOLVED: To provide a lithographic imaging method for use in the manufacture of an integrated circuit composed of patterned structure or other similarly patterned structures of very high resolution, the patterned structure having especially a feature with a half pitch of about 50 nm or less.
SOLUTION: Lithographic imaging of a 50 nm (or less) half-pitch feature in a chemically amplified resist (usually used in the manufacture of an integrated circuit) is made possible by the use of reduced temperature post-exposure processing and a low activation energy chemically amplified resist. The post-exposure processing preferably involves ambient to moderately elevated temperature and the presence of a deprotection reaction-dependent co-reactant (e.g. water).
COPYRIGHT: (C)2005,JPO&NCIPIAbstract translation: 要解决的问题：为了提供一种平版印刷成像方法，用于制造由图案化结构或其它具有非常高分辨率的类似图案化结构组成的集成电路，该图案化结构特别地具有半间距为约 50nm以下。 解决方案：化学放大型抗蚀剂（通常用于制造集成电路）中的50nm（或更少）半间距特征的平版印刷成像可以通过使用降低温度的曝光后处理和 低活化能化学放大抗蚀剂。 曝光后处理优选包括环境温度至适度升高的温度和脱保护反应依赖性共反应物（例如水）的存在。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：AU2003303304A1
公开(公告)日：2004-08-23
申请号：AU2003303304
申请日：2003-09-11
Applicant: IBM
Inventor： WONG RANEE W , CHEN KUANG-JUNG , VARANASI PUSHKARA RAO , ALLEN ROBERT D , BROCK PHILLIP , HOULE FRANCES , SOORIYAKUMARAN RATNAM , KHOJASTEH MAHMOUD M
Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.
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