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    Silicon-containing resist system with cyclic ketal protecting group
    3.
    发明专利
    Silicon-containing resist system with cyclic ketal protecting group 审中-公开
    具有循环保护组的含硅电阻系统

    公开(公告)号：JP2005148752A

    公开(公告)日：2005-06-09

    申请号：JP2004332288

    申请日：2004-11-16

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： HUANG WU-SONG ,  ALLEN ROBERT D ,  ANGELOPOULOS MARIE ,  KWONG RANEE W ,  SOORIYAKUMARAN RATNAM

    IPC: G03F7/039 ,  C08G77/22 ,  G03C1/492 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  G03F7/11 ,  G03F7/20 ,  H01L21/027

    CPC classification number: G03F7/094 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0757

    Abstract: PROBLEM TO BE SOLVED: To provide silsesquioxane polymers and photoresist compositions that contain such silsesquioxane polymers.
    SOLUTION: At least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silsesquioxane polymer contains pendant solubility inhibiting cyclic ketal acid-labile moieties that have low activation energy for acid-catalyzed cleaving. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive photoresist compositions. The invention encompasses methods of using such photoresist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g., bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提供含有这种倍半硅氧烷聚合物的倍半硅氧烷聚合物和光致抗蚀剂组合物。 解决方案：至少一部分倍半硅氧烷聚合物含有氟化部分，并且至少一部分倍半硅氧烷聚合物含有对酸催化裂解具有低活化能的侧链溶解性抑制性环状缩酮酸不稳定部分。 本发明的聚合物还含有侧链极性部分，其促进抗蚀剂在碱性水溶液中的碱溶性。 本发明的聚合物特别可用于正性光致抗蚀剂组合物。 本发明包括使用这种光致抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如，双层）光刻方法，该方法能够在诸如193nm和157nm的波长下产生高分辨率图像。 版权所有（C）2005，JPO＆NCIPI

    RADIATION-SENSITIVE RESIN COMPOSITION
    4.
    发明专利
    RADIATION-SENSITIVE RESIN COMPOSITION 审中-公开

    公开(公告)号：JP2003241383A

    公开(公告)日：2003-08-27

    申请号：JP2002046520

    申请日：2002-02-22

    Applicant: JSR CORP ,  IBM

    Inventor： NISHIMURA YUKIO ,  HOSHI MICHIAKI ,  SOYANO AKIMASA ,  KAJITA TORU ,  ALLEN ROBERT D ,  VARANASI PUSHKARA RAO

    IPC: G03F7/039 ,  C08F220/26 ,  C08F220/34 ,  C08F220/38 ,  C08F222/06 ,  C08F232/08 ,  G03F7/004 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition excellent in contrast, capable of forming a fine resist pattern with a high degree of accuracy and excellent also in transparency to a radiation, sensitivity and resolution. SOLUTION: The radiation-sensitive resin composition comprises (A) a resin comprising an acid-dissociable group-containing norbornene compound typified by 5-[(1-methylcyclohexyl)oxycarbonyl]norbornene or 5-(2-methyl-1- adamantyloxycarbonyl)norbornene and maleic anhydride, (B) a radiation-sensitive acid generator and (C) a compound typified by a di-t-butyl 1,3- adamantanedicarboxylate or 2,5-dimethyl-2,5-di(1-adamantylcarbonyloxy)hexane. Preferably the resin (A) further comprises a polar group-containing alicyclic ester of (meth)acrylic acid typified by 3-hydroxy-1-adamantyl (meth)acrylate. COPYRIGHT: (C)2003,JPO

    LOW-ACTIVATION ENERGY SILICON-CONTAINING RESIST SYSTEM
    5.
    发明申请
    LOW-ACTIVATION ENERGY SILICON-CONTAINING RESIST SYSTEM 审中-公开
    低活化能含硅抗蚀剂体系

    公开(公告)号：WO2005040918A3

    公开(公告)日：2005-12-15

    申请号：PCT/US2004035253

    申请日：2004-10-22

    Applicant: IBM ,  HUANG WU-SONG ,  ALLEN ROBERT D ,  ANGELOPOULOS MARIE ,  KWONG RANEE W ,  SOORIYAKUMARAN RATNAM

    Inventor： HUANG WU-SONG ,  ALLEN ROBERT D ,  ANGELOPOULOS MARIE ,  KWONG RANEE W ,  SOORIYAKUMARAN RATNAM

    IPC: G03C1/76 ,  G03F20060101 ,  G03F7/004 ,  G03F7/075

    CPC classification number: G03F7/0757 ,  G03F7/0045 ,  G03F7/0046

    Abstract: Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193nm and 157nm.

    Abstract translation: 提供了本发明的倍半硅氧烷聚合物，并且提供了包含这种倍半硅氧烷聚合物的抗蚀剂组合物，其中所述倍半硅氧烷聚合物的至少一部分含有氟化部分，并且所述倍半硅氧烷聚合物的至少一部分含有悬挂溶解度抑制酸不稳定部分， 用于酸催化裂解的活化能以及高光密度部分的存在被最小化或避免。 本发明的聚合物还含有促进抗蚀剂在碱性水溶液中的碱溶性的侧链极性部分。 本发明的聚合物在正型抗蚀剂组合物中特别有用。 本发明包括使用这种抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如双层）光刻方法，该方法能够在诸如193nm和157nm的波长产生高分辨率图像。

    RADIATION-SENSITIVE RESIN COMPOSITION
    7.
    发明专利
    RADIATION-SENSITIVE RESIN COMPOSITION 审中-公开

    公开(公告)号：JP2003255539A

    公开(公告)日：2003-09-10

    申请号：JP2002056522

    申请日：2002-03-01

    Applicant: JSR CORP ,  IBM

    Inventor： NISHIMURA YUKIO ,  ISHII HIROYUKI ,  KOBAYASHI HIDEKAZU ,  TOMAS I WOROU ,  ALLEN ROBERT D ,  VARANASI PUSHKARA RAO

    IPC: G03F7/039 ,  C08F220/18 ,  C08F220/28 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition having high transparency to a radiation and suitable for use as a chemically amplified resist excellent in basic performances as a resist, such as sensitivity, resolution, dry etching resistance and pattern shape. SOLUTION: The radiation-sensitive resin composition comprises (A) an alkali-insoluble or slightly alkali-soluble resin which has a repeating unit represented by formula (1-1) (where R 1 is H or methyl) and a (meth)acrylic repeating unit typified by 2-ethyl-2-adamantyl (meth)acrylate, 2-norbornyl-2-(meth) acryloyloxypropane or 1-methylcyclopentyl (meth)acrylate as essential units and becomes alkali-soluble under the action of an acid and (B) a radiation- sensitive acid generator. COPYRIGHT: (C)2003,JPO

    RADIATION-SENSITIVE RESIN COMPOSITION
    8.
    发明专利
    RADIATION-SENSITIVE RESIN COMPOSITION 审中-公开

    公开(公告)号：JP2003248313A

    公开(公告)日：2003-09-05

    申请号：JP2002046974

    申请日：2002-02-22

    Applicant: JSR CORP ,  IBM

    Inventor： NISHIMURA YUKIO ,  ISHII HIROYUKI ,  KATAOKA ATSUKO ,  TOMAS I WOROU ,  ALLEN ROBERT D ,  VARANASI PUSHKARA RAO

    IPC: G03F7/039 ,  C08F222/06 ,  C08F232/08 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide a new radiation-sensitive resin composition having high transparency to a radiation, excellent in basic physical properties as a resist, such as sensitivity, resolution, pattern shape and adhesion to a substrate, causing no development defect in microfabrication and capable of producing semiconductor devices in a high yield. SOLUTION: The radiation-sensitive resin composition comprises (A) an acid-dissociable group-containing resin having a repeating unit represented by formula (I) and a repeating unit represented by formula (II) and (B) a radiation-sensitive acid generator. In the formula (I), X is methylene or carbonyl; R 1 and R 2 are each H, a 1-4C alkyl, a monovalent O-containing polar group or a monovalent N-containing polar group; R 3 is H, a 1-6C alkyl, a 1-6C alkoxyl or a 2-7C alkoxycarbonyl; and n is an integer of 0-2. COPYRIGHT: (C)2003,JPO

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