公开(公告)号：EP1546813A4

公开(公告)日：2006-08-30

申请号：EP03815294

申请日：2003-09-11

Applicant: IBM

Inventor： KHOJASTEH MAHMOUD M ,  WONG RANEE W ,  CHEN KUANG-JUNG ,  VARANASI PUSHKARA RAO ,  ALLEN ROBERT D ,  BROCK PHILLIP ,  HOULE FRANCES ,  SOORIYAKUMARAN RATNAM

IPC: G03F7/38 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09

CPC classification number: G03F7/094 ,  G03F7/0397 ,  G03F7/0758 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115

Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.

公开(公告)号：AU2003303304A1

公开(公告)日：2004-08-23

申请号：AU2003303304

申请日：2003-09-11

Applicant: IBM

Inventor： WONG RANEE W ,  CHEN KUANG-JUNG ,  VARANASI PUSHKARA RAO ,  ALLEN ROBERT D ,  BROCK PHILLIP ,  HOULE FRANCES ,  SOORIYAKUMARAN RATNAM ,  KHOJASTEH MAHMOUD M

IPC: G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G03F7/38

Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.