公开(公告)号：EP1846947A4

公开(公告)日：2009-04-15

申请号：EP05852630

申请日：2005-12-02

Applicant: IBM

Inventor： VEREECKEN PHILIPPE M ,  BASKER VEERARAGHAVAN ,  CABRAL CYRIL JR ,  COOPER EMANUEL I ,  DELIGIANNI HARIKLIA ,  FRANK MARTIN M ,  JAMMY RAJARAO ,  PARUCHURI VAMSI KRISHNA ,  SAENGER KATHERINE L ,  SHAO XIAOYAN

IPC: H01L21/302 ,  H01L29/745

CPC classification number: H01L21/2885 ,  C25D3/50 ,  C25D5/02 ,  C25D5/024 ,  C25D5/54 ,  C25D7/123 ,  C25D9/04 ,  C25F3/14 ,  H01L21/28079 ,  H01L21/28114 ,  H01L21/76885 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78648

Abstract: A method for electroplating a gate metal (9) or other conducting or semiconducting material on a gate dielectric (2) is provided. The method involves selecting a substrate (3, 4), dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be generated at an interface between the dielectric layer and the electrolyte solution or melt.

公开(公告)号：EP2257968A4

公开(公告)日：2014-05-07

申请号：EP09724159

申请日：2009-01-29

Applicant: IBM

Inventor： HOVEL HAROLD J ,  HUANG QIANG ,  SHAO XIAOYAN ,  VICHICONTI JAMES ,  WALKER GEORGE F

IPC: H01L21/308 ,  B82Y10/00 ,  B82Y40/00 ,  C30B29/02 ,  H01L21/306 ,  H01L29/06 ,  H01L31/06

CPC classification number: H01L31/18 ,  B82Y10/00 ,  B82Y30/00 ,  C30B29/02 ,  C30B29/06 ,  C30B29/40 ,  C30B29/52 ,  C30B29/60 ,  C30B29/605 ,  C30B33/10 ,  H01L21/30604 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L31/0352 ,  H01L33/20

公开(公告)号：WO2011154208A3

公开(公告)日：2012-06-07

申请号：PCT/EP2011057478

申请日：2011-05-10

Applicant: IBM ,  IBM UK ,  SHAO XIAOYAN ,  FULLER NICHOLAS ,  PAPA RAO SATYAVOLU SRINIVAS ,  FISHER KATHRYN CLARE ,  HEDRICK JEFFREY

Inventor： SHAO XIAOYAN ,  FULLER NICHOLAS ,  PAPA RAO SATYAVOLU SRINIVAS ,  FISHER KATHRYN CLARE ,  HEDRICK JEFFREY

IPC: H01L31/18 ,  H01L31/068

CPC classification number: H01L31/1804 ,  H01L31/022425 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

Abstract: The present invention provides a method of forming a back side surface field of a solar cell without utilizing screen printing. The method includes first forming a p-type dopant layer directly on the back side surface of a semiconductor substrate wherein said substrate includes a p/n junction, utilizing an electrodeposition method. The p/n junction is defined as the interface that is formed between an n-type semiconductor portion of the substrate and an underlying p-type semiconductor portion of the substrate. The plated structure is then annealed to from a P++ back side surface field layer directly on the back side surface of the semiconductor substrate, Optionally, a metallic film can be electrodeposited on an exposed surface of the P++ back side surface layer.

Abstract translation: 本发明提供一种在不使用丝网印刷的情况下形成太阳能电池的背面表面场的方法。 该方法包括首先在半导体衬底的背面形成p型掺杂剂层，其中所述衬底包括p / n结，利用电沉积法。 p / n结被定义为在衬底的n型半导体部分和衬底的下面的p型半导体部分之间形成的界面。 然后将电镀结构从直接在半导体衬底的背面表面上的P ++背面表面场层退火。可选地，金属膜可以电沉积在P ++背面层的露出表面上。

公开(公告)号：JP2007194624A

公开(公告)日：2007-08-02

申请号：JP2006353015

申请日：2006-12-27

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： MALHOTRA SANDRA G ,  DELIGIANNI HARIKLIA ,  VAN DER STRATEN OSCAR ,  SHAO XIAOYAN ,  ROSSNAGEL STEPHEN M ,  TAI TSONG-LIN

IPC: H01L23/52 ,  C23C16/16 ,  C23C16/56 ,  C25D7/12 ,  H01L21/288 ,  H01L21/3205

CPC classification number: H01L21/76843 ,  H01L21/28562 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873 ,  Y10S438/952

Abstract: PROBLEM TO BE SOLVED: To provide a process for direct electroplating of copper on a platable layer which is not copper.
SOLUTION: This process for forming an interconnection in a semiconductor structure comprises a step for forming a dielectric layer on a substrate, a step for forming a first barrier layer on the dielectric layer, and a step for forming a second barrier layer on the first barrier layer. The second barrier layer is selected from a group including ruthenium, platinum, palladium, rhodium and iridium. The second barrier layer is formed by a process including a step for manipulating so that bulk concentration of oxygen in the second barrier layer becomes 20 atm.% or less, and a step for forming a conductive layer on the second barrier layer. This process further can include a step for treating the second barrier to decrease the amount of an oxide on the surface of the second barrier layer.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供在不是铜的可镀层上直接电镀铜的方法。 解决方案：用于在半导体结构中形成互连的该工艺包括在衬底上形成电介质层的步骤，在电介质层上形成第一阻挡层的步骤和用于形成第二阻挡层的步骤 第一阻隔层。 第二阻挡层选自包括钌，铂，钯，铑和铱的组。 第二阻挡层通过包括操作步骤的方法形成，使得第二阻挡层中的氧的体积浓度变为20atm％以下，以及在第二阻挡层上形成导电层的步骤。 该方法还可以包括用于处理第二阻挡层以减少第二阻挡层的表面上的氧化物的量的步骤。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2011225991A

公开(公告)日：2011-11-10

申请号：JP2011082976

申请日：2011-04-04

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： SHAO XIAOYAN ,  KOSBAR LAURA L

IPC: C25D7/12 ,  C25D21/12 ,  H01L21/288 ,  H01L31/04

CPC classification number: C25D7/123 ,  C25D3/12 ,  C25D3/562 ,  C25D5/024 ,  C25D5/18 ,  H01L31/022425 ,  Y02E10/50

Abstract: PROBLEM TO BE SOLVED: To provide a method of electrodeposition directly on a semiconductor.SOLUTION: There is provided the method of electrodeposition of a metal or metal alloy on at least one surface of a semiconductor material. The method provides full coverage of an electrodeposited metallic film on the at least one surface of the semiconductor material. The method includes providing a semiconductor material. A metallic film is applied to at least one surface of the semiconductor material by an electrodeposition process. The electrodeposition process employed uses current waveforms that apply a low current density initially, and after a predetermined period of time, the current density is changed to a high current density.

Abstract translation: 要解决的问题：提供直接电沉积在半导体上的方法。 解决方案：提供了在半导体材料的至少一个表面上电沉积金属或金属合金的方法。 该方法提供半导体材料的至少一个表面上的电沉积金属膜的完全覆盖。 该方法包括提供半导体材料。 通过电沉积工艺将金属膜施加到半导体材料的至少一个表面。 使用的电沉积工艺使用最初施加低电流密度的电流波形，并且在预定时间段之后，将电流密度改变为高电流密度。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：WO2007112361A3

公开(公告)日：2008-04-10

申请号：PCT/US2007064946

申请日：2007-03-26

Applicant: IBM ,  CABRAL CYRIL JR ,  DELIGIANNI HARIKLIA ,  KNARR RANDOLPH F ,  MALHOTRA SANDRA G ,  ROSSNAGEL STEPHEN ,  SHAO XIAOYAN ,  TOPOL ANNA ,  VEREECKEN PHILIPPE M

Inventor： CABRAL CYRIL JR ,  DELIGIANNI HARIKLIA ,  KNARR RANDOLPH F ,  MALHOTRA SANDRA G ,  ROSSNAGEL STEPHEN ,  SHAO XIAOYAN ,  TOPOL ANNA ,  VEREECKEN PHILIPPE M

IPC: H01L29/02

CPC classification number: H01L23/485 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A contact metallurgy structure comprising a patterned dielectric layer having cavities on a substrate; a suicide or germanide layer such as of cobalt and/or nickel located at the bottom of cavities; a contact layer comprising Ti or Ti/TiN located on top of the dielectric layer and inside the cavities and making contact to the suicide or germanide layer on the bottom; a diffusion barrier layer located on top of the contact layer and inside the cavities; optionally a seed layer for plating located on top of the barrier layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer is electrodeposited with at least one member selected from the group consisting of copper, rhodium, ruthenium, iridium, molybdenum, gold, silver, nickel, cobalt, silver, gold, cadmium and zinc and alloys thereof. When the metal fill layer is rhodium, ruthenium, or iridium, an effective diffusion barrier layer is not required between the fill metal and the dielectric. When the barrier layer is platable, such as ruthenium, rhodium, platinum, or iridium, the seed layer is not required.

Abstract translation: 一种接触式冶金结构，包括在基底上具有空腔的图案化电介质层; 位于空腔底部的自杀或锗化物层，例如钴和/或镍; 接触层包括位于介电层顶部并且在空腔内并且与底部上的硅化物或锗化物层接触的Ti或Ti / TiN; 位于所述接触层顶部和所述空腔内的扩散阻挡层; 可选地，位于阻挡层顶部的用于电镀的种子层; 提供通孔中的金属填充层以及制造方法。 金属填充层用选自铜，铑，钌，铱，钼，金，银，镍，钴，银，金，镉和锌中的至少一种电池和其合金电沉积。 当金属填充层是铑，钌或铱时，在填充金属和电介质之间不需要有效的扩散阻挡层。 当阻挡层是可镀的，例如钌，铑，铂或铱时，不需要种子层。