公开(公告)号：JP2009235414A

公开(公告)日：2009-10-15

申请号：JP2009138295

申请日：2009-06-09

Applicant: Internatl Business Mach Corp ,  Sumitomo Bakelite Co Ltd ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation ,  住友ベークライト株式会社

Inventor： JAYARAMAN SAIKUMAR ,  GOODALL BRIAN L ,  RHODES LARRY F ,  SHICK ROBERT A ,  VICARI RICHARD ,  ROBERT D ALLEN ,  JULIAN OPITZ ,  RATONAMU SOORIYAKUMARAN ,  WALLOW THOMAS

IPC: C08F232/00 ,  C08F4/80 ,  C08F32/08 ,  C08F232/08 ,  C08G61/06 ,  C08G61/08 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039

CPC classification number: C08F232/08 ,  C08G61/08 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/039 ,  Y10S430/115

Abstract: PROBLEM TO BE SOLVED: To provide a polycyclic polymer and a polycyclic resist composition useful for a photoresist composition transparent to a short wavelength of image focusing irradiation, and having resistance in a dry etching method. SOLUTION: The present invention uses the resist composition comprising the polycyclic polymer containing repeated aromatic pendant groups along a polymer principal chain. The polymer exhibits a light transparent property with respect to a deep UV wavelength, and is useful for an application to a high resolution photolithography. The polymer is useful, in particular, in chemically amplified positive and negative type gradation resists. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种可用于对短波长图像聚焦照射透明的光致抗蚀剂组合物的多环聚合物和多环抗蚀剂组合物，并且在干蚀刻方法中具有电阻。 解决方案：本发明使用包含沿着聚合物主链含有重复芳族侧基的多环聚合物的抗蚀剂组合物。 该聚合物相对于深UV波长显示出透光性，并且可用于高分辨率光刻的应用。 该聚合物特别适用于化学放大的正型和负型层压抗蚀剂。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2000298350A

公开(公告)日：2000-10-24

申请号：JP2000065165

申请日：2000-03-09

Applicant: IBM

Inventor： VARANASI PUSHKARA RAO ,  ALLEN ROBERT D ,  TOMAS I WOROU ,  JULIAN OPITZ ,  DEPIETRO RICHARD A ,  MARGARET C LAWSON ,  ANN MARIE MYUUHAATAA ,  JOSEPH F MANISCALCO ,  MAHAMUUDO EMU HOJISUTE ,  JORDHAMO GEORGE M ,  ITO HIROSHI

IPC: C08F232/00 ,  C08K5/00 ,  C08L45/00 ,  G03F7/004 ,  G03F7/039 ,  G03F7/11 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To obtain a photoresist composition using an acid as a catalyst, capable of forming an image with radiation of 193 nm and capable of forming a photoresist structure having high resolution and high etching resistance by development. SOLUTION: The photoresist composition comprises a combination of a cyclic olefin polymer, a photosensitive acid-generating agent and a substantially transparent bulky hydrophobic additive. The cyclic olefin polymer contains a cyclic olefin unit having a polar functional group which promotes dissolution in an aqueous alkali solution and the cyclic olefin unit having an acid-labile group which inhibits the dissolution in the aqueous alkali solution. The hydrophobic additive is selected from the group comprising a saturated steroid compound, a non-steroid cycloaliphatic compound and a non-steroid polycycloaliphatic compound having an acid-labile bond.