公开(公告)号：EP1908094A4

公开(公告)日：2009-02-11

申请号：EP05853232

申请日：2005-12-07

Applicant: IBM

Inventor： GAIDIS MICHAEL C ,  KANAKASABAPATHY SIVANANDA K ,  O'SULLIVAN EUGENE J

IPC: H01L21/00 ,  B05C1/00 ,  B44C1/22

CPC classification number: H01L43/12 ,  H01L21/0332 ,  H01L21/0337 ,  H01L27/11507 ,  H01L28/65

Abstract: Techniques for magnetic device (302) fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure (315), comprising thin hard mask layer (316) and thick hard mask layer (318) is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one~ or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.

公开(公告)号：WO2007008251A2

公开(公告)日：2007-01-18

申请号：PCT/US2005044263

申请日：2005-12-07

Applicant: IBM ,  GAIDIS MICHAEL C ,  KANAKASABAPATHY SIVANANDA K ,  O'SULLIVAN EUGENE J

Inventor： GAIDIS MICHAEL C ,  KANAKASABAPATHY SIVANANDA K ,  O'SULLIVAN EUGENE J

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L43/12 ,  H01L21/0332 ,  H01L21/0337 ,  H01L27/11507 ,  H01L28/65

Abstract: Techniques for magnetic device fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.

Abstract translation: 提供了磁性器件制造技术。 一方面，图案化至少一种，例如非挥发性材料的方法包括以下步骤。 在待图案化材料的至少一个表面上形成硬掩模结构。 硬掩模结构被配置为具有靠近材料的基部和与基部相对的顶部。 基座具有大于硬掩模结构的顶部的一个或多个横向尺寸的一个或多个横向尺寸，使得基部的至少一部分横向延伸超过顶部的实质距离。 硬掩模结构的顶部距离被蚀刻的材料比基底更大的垂直距离。 材料被蚀刻。

公开(公告)号：CA2614373C

公开(公告)日：2014-05-27

申请号：CA2614373

申请日：2005-12-07

Applicant: IBM

Inventor： GAIDIS MICHAEL C ,  KANAKASABAPATHY SIVANANDA K ,  O'SULLIVAN EUGENE J

IPC: H01L21/302 ,  H01L21/461

Abstract: Techniques for magnetic device fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.

公开(公告)号：DE102016105377A1

公开(公告)日：2016-09-29

申请号：DE102016105377

申请日：2016-03-22

Applicant: IBM

Inventor： DELIGIANNI HARIKLIA ,  GALLAGHER WILLIAM J ,  KELLOCK ANDREW JOHN ,  O'SULLIVAN EUGENE J ,  ROMANKIW LUBOMYR T ,  WANG NAIGANG

IPC: H01L21/768 ,  H01L23/522 ,  H01L27/08

Abstract: Eine magnetische Struktur auf einem Chip beinhaltet ein magnetisches Material, das Cobalt in einem Bereich von etwa 80 bis etwa 90 Atom-% (At.-%) auf Grundlage der Gesamtzahl von Atomen des magnetischen Materials, Wolfram in einem Bereich von etwa 4 bis etwa 9 At.-% auf Grundlage der Gesamtzahl von Atomen des magnetischen Materials, Phosphor in einem Bereich von etwa 7 bis etwa 15 At.-% auf Grundlage der Gesamtzahl von Atomen des magnetischen Materials und Palladium im Wesentlichen im gesamten magnetischen Material verteilt aufweist.

公开(公告)号：CA2614373A1

公开(公告)日：2007-01-18

申请号：CA2614373

申请日：2005-12-07

Applicant: IBM

Inventor： GAIDIS MICHAEL C ,  KANAKASABAPATHY SIVANANDA K ,  O'SULLIVAN EUGENE J

IPC: H01L21/302 ,  H01L21/461

Abstract: Techniques for magnetic device fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.

公开(公告)号：CA2089791C

公开(公告)日：1998-11-24

申请号：CA2089791

申请日：1993-02-18

Applicant: IBM

Inventor： BRADY MICHAEL J ,  MARINO JEFFREY R ,  FARRELL CURTIS E ,  KANG SUNG K ,  PURUSHOTHAMAN SAMPATH ,  MIKALSEN DONALD J ,  MOSKOWITZ PAUL A ,  O'SULLIVAN EUGENE J ,  O'TOOLE TERRENCE R ,  RIELEY SHELDON C ,  WALKER GEORGE F

IPC: H01L21/60 ,  C23C18/50 ,  C25D3/54 ,  H01L21/288 ,  H01L21/603 ,  H01L21/768 ,  H01L23/495 ,  H01L23/498 ,  H01L23/532

Abstract: Silicon and germanium containing materials are used as a surface of conductors i n electronic devices. Solder can be fluxlessly bonded and wires can be wire bonded to these s urfaces. These materials are used as a surface coating for lead frames for packaging inte grated circuit chips. These materials can be decal transferred onto conductor surfaces or elect rolessly or electrolytically disposed thereon.

公开(公告)号：BR9301497A

公开(公告)日：1993-10-26

申请号：BR9301497

申请日：1993-04-12

Applicant: IBM

Inventor： BRADY MICHAEL J ,  FARREL CURTIS E ,  KANG SUNG K ,  MARINO JEFFREY R ,  MIKALSEN DONALD J ,  MOSKOWITZ PAUL A ,  O'SULLIVAN EUGENE J ,  TOOLE TERRENCE R O ,  PURUSHOTHAMAN SAMPATH ,  RIELEY SHELDON C ,  WALKER GEORGE F

IPC: H01L21/60 ,  C23C18/50 ,  C25D3/54 ,  H01L21/288 ,  H01L21/603 ,  H01L21/768 ,  H01L23/495 ,  H01L23/498 ,  H01L23/532 ,  H01L21/40

Abstract: Silicon and germanium containing materials are used at surface of conductors in electronic devices. Solder can be fluxlessly bonded and wires can be wire bonded to these surfaces. These material are used as a surface coating for lead frames for packaging integrated circuit chips. These materials can be decal transferred onto conductor surfaces or electrolessly or electrolytically disposed thereon.

公开(公告)号：CA2089791A1

公开(公告)日：1993-10-25

申请号：CA2089791

申请日：1993-02-18

Applicant: IBM

Inventor： BRADY MICHAEL J ,  FARRELL CURTIS E ,  KANG SUNG K ,  MARINO JEFFREY R ,  MIKALSEN DONALD J ,  MOSKOWITZ PAUL A ,  O'SULLIVAN EUGENE J ,  O'TOOLE TERRENCE R ,  PURUSHOTHAMAN SAMPATH ,  RIELEY SHELDON C ,  WALKER GEORGE F

IPC: H01L21/60 ,  C23C18/50 ,  C25D3/54 ,  H01L21/288 ,  H01L21/603 ,  H01L21/768 ,  H01L23/495 ,  H01L23/498 ,  H01L23/532

Abstract: Silicon and germanium containing materials are used at surface of conductors in electronic devices. Solder can be fluxlessly bonded and wires can be wire bonded to these surfaces. These material are used as a surface coating for lead frames for packaging integrated circuit chips. These materials can be decal transferred onto conductor surfaces or electrolessly or electrolytically disposed thereon.