公开(公告)号：EP1911096A4

公开(公告)日：2008-10-22

申请号：EP06788341

申请日：2006-07-24

Applicant: IBM

Inventor： DALTON TIMOTHY J ,  HSU LOUIS L C ,  WONG KEITH KWONG HON ,  YANG CHIH-CHAO ,  GAIDIS MICHAEL C ,  RADENS CARL ,  CLEVENGER LAWRENCE A

IPC: H01L27/22 ,  H01L21/768 ,  H01L21/8247 ,  H01L23/528 ,  H01L43/12

CPC classification number: B82Y10/00 ,  H01L27/222 ,  H01L43/12

Abstract: A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask.

公开(公告)号：EP1642330A4

公开(公告)日：2011-09-28

申请号：EP03817676

申请日：2003-06-24

Applicant: IBM

Inventor： GAIDIS MICHAEL C

IPC: H01L21/46 ,  H01L21/301 ,  H01L21/321 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8246 ,  H01L23/544 ,  H01L27/22

CPC classification number: H01L21/3212 ,  B82Y10/00 ,  H01L23/544 ,  H01L27/222 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1917678A4

公开(公告)日：2012-08-22

申请号：EP06759161

申请日：2006-05-04

Applicant: IBM

Inventor： KANAKASABAPATHY SIVANANDA K ,  GAIDIS MICHAEL C

IPC: H01L21/00 ,  H01L21/26 ,  H01L21/302 ,  H01L29/78

CPC classification number: H01L43/12 ,  H01L21/76897 ,  H01L27/222 ,  H01L43/08 ,  H01L2924/3011

公开(公告)号：EP2140458A4

公开(公告)日：2010-05-05

申请号：EP07867608

申请日：2007-12-04

Applicant: IBM

Inventor： GAIDIS MICHAEL C ,  CLEVENGER LAWRENCE A ,  DALTON TIMOTHY J ,  DEBROSSE JOHN K ,  HSU LOUIS L C ,  RADENS CARL ,  WONG KEITH K H ,  YANG CHIH-CHAO

IPC: G11C19/08 ,  G11B5/008

CPC classification number: G11C19/0841 ,  B82Y10/00 ,  G11C5/02 ,  G11C11/161 ,  G11C11/1675 ,  Y10T29/53165

公开(公告)号：EP1908094A4

公开(公告)日：2009-02-11

申请号：EP05853232

申请日：2005-12-07

Applicant: IBM

Inventor： GAIDIS MICHAEL C ,  KANAKASABAPATHY SIVANANDA K ,  O'SULLIVAN EUGENE J

IPC: H01L21/00 ,  B05C1/00 ,  B44C1/22

CPC classification number: H01L43/12 ,  H01L21/0332 ,  H01L21/0337 ,  H01L27/11507 ,  H01L28/65

Abstract: Techniques for magnetic device (302) fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure (315), comprising thin hard mask layer (316) and thick hard mask layer (318) is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one~ or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.

公开(公告)号：EP1639653A4

公开(公告)日：2006-11-22

申请号：EP03817675

申请日：2003-06-24

Applicant: IBM

Inventor： GAIDIS MICHAEL C

IPC: H01L29/82 ,  G11C11/15 ,  G11C11/16 ,  H01L27/22 ,  H01L29/00 ,  H01L43/00 ,  H01L43/08 ,  H01L43/12

CPC classification number: G11C11/16 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12

Abstract: A conductive line structure for a field effect transistor (FET) based magnetic random access memory (MRAM) device includes a lateral metal strap (326) conductively coupled to a lower metallization line (302). A magnetic tunnel junction (MTJ) stack (316) is formed on the metal strap (326), and a metal shield (324) is formed over the MTJ stack (316), the metal shield (324) being self-aligned with respect to the metal strap (326). An upper metallization line (332) is conductively coupled to the metal shield (324), wherein the metal shield (324) serves as an etch stop during the formation of the upper metallization line (332).

公开(公告)号：JP2006005342A

公开(公告)日：2006-01-05

申请号：JP2005162158

申请日：2005-06-02

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： GAIDIS MICHAEL C ,  TROUILLOUD PHILLIP L ,  KANAKASABAPATHY SIVANANDA K ,  ABRAHAM DAVID W

IPC: H01L27/105 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/22 ,  H01L31/113 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/12 ,  G11C11/15 ,  G11C11/16 ,  H01L27/222

Abstract: PROBLEM TO BE SOLVED: To provide a method capable of efficiently forming a magnetism liner profile, making write-in magnetic field concentrate in a free layer of MTJ.
SOLUTION: In an MRAM cell, write-in current is confined inside a low reluctance material. A U-shaped cross-section concentrating magnetic flux to storing elements is attained, in such a way that this material is processed by one among several methods, and that the magnetic flux is transmitted by making a material nearest to the storing elements invalid.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供能够有效地形成磁性衬垫轮廓的方法，使得写入磁场集中在MTJ的自由层中。

解决方案：在MRAM单元中，写入电流限制在低磁阻材料内。 获得了将U形截面集中到存储元件的磁通量，使得这种材料通过几种方法中的一种进行处理，并且通过使最靠近存储元件的材料无效地传输磁通量。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：WO2007008251A2

公开(公告)日：2007-01-18

申请号：PCT/US2005044263

申请日：2005-12-07

Applicant: IBM ,  GAIDIS MICHAEL C ,  KANAKASABAPATHY SIVANANDA K ,  O'SULLIVAN EUGENE J

Inventor： GAIDIS MICHAEL C ,  KANAKASABAPATHY SIVANANDA K ,  O'SULLIVAN EUGENE J

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L43/12 ,  H01L21/0332 ,  H01L21/0337 ,  H01L27/11507 ,  H01L28/65

Abstract: Techniques for magnetic device fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.

Abstract translation: 提供了磁性器件制造技术。 一方面，图案化至少一种，例如非挥发性材料的方法包括以下步骤。 在待图案化材料的至少一个表面上形成硬掩模结构。 硬掩模结构被配置为具有靠近材料的基部和与基部相对的顶部。 基座具有大于硬掩模结构的顶部的一个或多个横向尺寸的一个或多个横向尺寸，使得基部的至少一部分横向延伸超过顶部的实质距离。 硬掩模结构的顶部距离被蚀刻的材料比基底更大的垂直距离。 材料被蚀刻。

公开(公告)号：WO2007016047A3

公开(公告)日：2008-01-03

申请号：PCT/US2006028718

申请日：2006-07-24

Applicant: IBM ,  GAIDIS MICHAEL C ,  RADENS CARL ,  CLEVENGER LAWRENCE A ,  DALTON TIMOTHY J ,  HSU LOUIS L C ,  WONG KEITH KWONG HON ,  YANG CHIH-CHAO

Inventor： GAIDIS MICHAEL C ,  RADENS CARL ,  CLEVENGER LAWRENCE A ,  DALTON TIMOTHY J ,  HSU LOUIS L C ,  WONG KEITH KWONG HON ,  YANG CHIH-CHAO

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: B82Y10/00 ,  H01L27/222 ,  H01L43/12

Abstract: A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask.

Abstract translation: 磁性随机存取存储器（MRAM）器件包括形成在下布线层上的磁隧道结（MTJ）堆叠，形成在MTJ堆叠上的硬掩模和形成在硬掩模上的上布线层。 上布线层包括经由位于其中的位线的槽，槽经由与硬掩模接触的位线并与部分地围绕硬掩模的侧壁的蚀刻停止层接触。

公开(公告)号：WO2007024300A2

公开(公告)日：2007-03-01

申请号：PCT/US2006017418

申请日：2006-05-04

Applicant: IBM ,  KANAKASABAPATHY SIVANANDA K ,  GAIDIS MICHAEL C

Inventor： KANAKASABAPATHY SIVANANDA K ,  GAIDIS MICHAEL C

IPC: H01L21/336

CPC classification number: H01L43/12 ,  H01L21/76897 ,  H01L27/222 ,  H01L43/08 ,  H01L2924/3011

Abstract: Techniques for forming a magnetic device are provided. In one aspect, a method of forming a via hole self-aligned with a magnetic device comprises the following steps. A dielectric layer is formed over at least a portion of the magnetic device. The dielectric layer is configured to have an underlayer proximate to the magnetic device which comprises a first material, and an overlayer on a side of the underlayer opposite the magnetic device which comprises a second material. The first material is different from the second material. In a first etching phase, a first etchant is used to etch the dielectric layer, beginning with the overlayer, and through the overlayer. In a second etching phase, a second etchant which is selective for etching the underlayer is used to etch the dielectric layer through the underlayer.

Abstract translation: 提供了用于形成磁性装置的技术。 一方面，形成与磁性装置自对准的通孔的方法包括以下步骤。 在磁性器件的至少一部分上形成电介质层。 电介质层被配置为具有靠近磁性装置的底层，其包括第一材料，并且在与包括第二材料的磁性装置相对的底层的一侧上的覆盖层。 第一种材料与第二种材料不同。 在第一蚀刻阶段中，使用第一蚀刻剂来从覆盖层开始并通过覆盖层来蚀刻介电层。 在第二蚀刻阶段中，使用用于蚀刻底层的第二蚀刻剂来蚀刻通过底层的介电层。