公开(公告)号：JP2007318141A

公开(公告)日：2007-12-06

申请号：JP2007135218

申请日：2007-05-22

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： LIN QINGHUANG ,  YANG CHIH-CHAO ,  SPOONER TERRY A ,  GRISELDA BONILLA

IPC: H01L21/768 ,  H01L21/312 ,  H01L21/316 ,  H01L21/3205 ,  H01L23/52

CPC classification number: H01L23/53295 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide an interconnection structure with improved adhesion between a noble metal liner and dielectric material adjacent thereto.
SOLUTION: The structure relates to the interconnection structure with improved adhesion between a chemically etched dielectric material and a noble metal liner, as well as a method for manufacturing the structure. The structure includes a step of processing the chemically etched dielectric material to change chemical properties of the dielectric material so that the processed surface can become hydrophobic. The processing step is carried out before deposition of the noble metal liner, whereby the adhesion between the chemically etched dielectric material and the noble metal liner can be improved.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供具有改进的贵金属衬垫和与其相邻的电介质材料之间的粘附性的互连结构。 解决方案：该结构涉及具有改进的化学蚀刻介电材料和贵金属衬垫之间的粘附性的互连结构以及制造该结构的方法。 该结构包括处理化学蚀刻的电介质材料以改变电介质材料的化学性质以使经处理的表面变得疏水的步骤。 在沉积贵金属衬垫之前进行处理步骤，从而可以改善化学蚀刻的电介质材料和贵金属衬垫之间的粘合性。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006216541A

公开(公告)日：2006-08-17

申请号：JP2006013182

申请日：2006-01-20

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： EDELSTEIN DANIEL C ,  GATES STEPHEN M ,  GRILL ALFRED ,  LANE MICHAEL ,  LIN QINGHUANG ,  MILLER ROBERT D ,  NEUMAYER DEBORAH A ,  NGUYEN SON VAN

IPC: H01B3/00 ,  C23C16/42 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures. SOLUTION: The low-k dielectric material includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si-CH 3 functional groups, and another fraction of the C atoms are bonded as Si-R-Si, wherein R is phenyl, -[CH 2 ] n -, (n is greater than or equal to 1), HC=CH, C=CH 2 , C≡C or a [S] n linkage, (n is as defined above). COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供具有增加的内聚强度的低k电介质材料，用于包括互连和感测结构的电子结构中。 解决方案：低k电介质材料包括Si，C，O和H的原子，其中C原子的一部分键合为Si-CH 3 S / S官能团，另一部分 的C原子键合为Si-R-Si，其中R是苯基， - （n大于或等于1） ，HC = CH，C = CH 2 ，C≡C或[S] n 键，（n如上所定义）。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004212983A

公开(公告)日：2004-07-29

申请号：JP2003421691

申请日：2003-12-18

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： LIN QINGHUANG ,  SOORIYAKUMARAN RATNAM

IPC: G03F7/075 ,  C08G77/04 ,  C08G77/14 ,  C08G77/24 ,  C08K5/00 ,  C08L83/06 ,  C09D183/08 ,  G03F7/004 ,  H01L21/312 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: G03F7/0757 ,  C08G77/04 ,  C08G77/24 ,  C09D183/08 ,  G03F7/0046 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/31695 ,  H01L21/76814 ,  H01L21/7682 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  Y10T428/31663 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a dielectric material having a low dielectric constant (low k) and not requiring a number of mask layers or processing steps as a dielectric material used for an interconnection structure of integrated circuits. SOLUTION: A composition containing a functionalized polymer having one or more acid-sensitive groups capable of imaging is provided. The polymer is a low k polymer or a polymer convertible to a low k polymer after succeeding processing with heat or light. Specifically, the polymer may be hydrocarbon, fluorinated hydrocarbon, organosilicate or silsesquioxane. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JPH11316460A

公开(公告)日：1999-11-16

申请号：JP3870299

申请日：1999-02-17

Applicant: IBM

Inventor： CHEN KUANG-JUNG ,  DELLAGUARDIA RONALD A ,  HUANG WU-SONG ,  KATNANI AHMAD D ,  KHOJASTEH MAHMOUD M ,  LIN QINGHUANG

IPC: H01L21/027 ,  G03F7/004 ,  G03F7/039

Abstract: PROBLEM TO BE SOLVED: To obtain high resolution and superior stability by incorporating a mix of at least two kinds of miscible polymer resins soluble in an aqueous base to make it useful for the blend of a positive type resist. SOLUTION: One of polymer resins soluble in an aq. base is partially protected with protective groups, having high activation energy and the other of the polymer resins soluble in an aqueous base is partially protected with protective groups having low activation energy. The polymer resin to be used is a homopolymer which is soluble in an alkali solution after being deprotected or a multiple polymer containing two or more kinds of repeating monomeric units e.g. a copolymer or a terpolymer and contains polar functional groups which ionize readily. The polar functional groups of the polymer resins are hydroxyl or carboxyl groups. The homopolymer which can be used as the polymer resin is especially preferably polyhydroxystyrene(PHS), and the para-type is most preferable.

公开(公告)号：GB2485283A

公开(公告)日：2012-05-09

申请号：GB201119451

申请日：2010-08-23

Applicant: IBM

Inventor： NELSON ALSHAKIM ,  BROCK PHILLIP JOE ,  SOORIYAKUMARAN RATNAM ,  DAVIS BLAKE ,  MILLER ROBERT DENNIS ,  ALLEN ROBERT DAVID ,  LIN QINGHUANG

IPC: C09D183/04 ,  C08G77/04 ,  C08L83/04 ,  C09D183/14 ,  H01L21/312

Abstract: Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.

公开(公告)号：GB2485283B

公开(公告)日：2014-11-26

申请号：GB201119451

申请日：2010-08-23

Applicant: IBM

Inventor： NELSON ALSHAKIM ,  BROCK PHILLIP JOE ,  SOORIYAKUMARAN RATNAM ,  DAVIS BLAKE ,  MILLER ROBERT DENNIS ,  ALLEN ROBERT DAVID ,  LIN QINGHUANG

IPC: C09D183/04 ,  C08G77/04 ,  C08L83/04 ,  C09D183/14 ,  H01L21/312

公开(公告)号：DE112010003844T5

公开(公告)日：2012-09-06

申请号：DE112010003844

申请日：2010-08-23

Applicant: IBM

Inventor： LIN QINGHUANG ,  NEUMAYER DEBORAH ANN

IPC: H01L21/768 ,  H01L21/027

Abstract: Es wird eine Verbindungsstruktur bereitgestellt, welche mindestens ein strukturiertes und gehärtetes Low-k-Material (18', 22') umfasst, das auf einer Fläche einer strukturierten Gradienten-Deckschicht (14) angeordnet ist. Das mindestens eine gehärtete und strukturierte Low-k-Material und die strukturierte Gradienten-Deckschicht weisen jeweils darin eingebettete leitfähig gefüllte Bereiche (26) auf. Bei dem strukturierten und gehärteten Low-k-Material handelt es sich um ein gehärtetes Produkt eines funktionalisierten Polymers, Copolymers oder Gemisches, welches mindestens zwei einer beliebigen Kombination von Polymeren und/oder Copolymeren mit einer oder mehreren säureempfindlichen abbildbaren Gruppen umfasst, und die Gradienten-Deckschicht einen unteren Bereich, der als Barrierebereich fungiert, und einen oberen Bereich umfasst, welcher Antireflexeigenschaften einer permanenten Antireflexbeschichtung aufweist.

公开(公告)号：GB2486078B

公开(公告)日：2014-05-07

申请号：GB201200146

申请日：2010-08-23

Applicant: IBM

Inventor： LIN QINGHUANG ,  NEUMAYER DEBORAH ANN

IPC: H01L21/768 ,  H01L21/312

Abstract: An interconnect structure is provided that includes at least one patterned and cured low-k material located on a surface of a patterned graded cap layer. The at least one cured and patterned low-k material and the patterned graded cap layer each have conductively filled regions embedded therein. The patterned and cured low-k material is a cured product of a functionalized polymer, copolymer, or a blend including at least two of any combination of polymers and/or copolymers having one or more acid-sensitive imageable groups, and the graded cap layer includes a lower region that functions as a barrier region and an upper region that has antireflective properties of a permanent antireflective coating.

公开(公告)号：DE112010003502T5

公开(公告)日：2013-03-14

申请号：DE112010003502

申请日：2010-08-23

Applicant: IBM

Inventor： NELSON ALSHAKIM ,  BROCK PHILLIP JOE ,  SOORIYAKUMARAN RATMAN ,  DAVIS BLAKE ,  MILLER ROBERT DENNIS ,  ALLEN ROBERT DAVID ,  LIN QINGHUANG

IPC: H01L21/32 ,  C09D183/04 ,  C09D183/14 ,  H01L21/312

Abstract: Silsesquioxan-Polymere, Silsesquioxan-Polymere in negativ photostrukturierbaren dielektrischen Formulierungen, Verfahren zur Bildung von Strukturen unter Verwendung von negativ photostrukturierbaren dielektrischen Formulierungen, welche Silsesquioxan-Polymere enthalten, und Strukturen, die aus Silsesquioxan-Polymeren hergestellt wurden.

公开(公告)号：GB2486078A

公开(公告)日：2012-06-06

申请号：GB201200146

申请日：2010-08-23

Applicant: IBM

Inventor： LIN QINGHUANG ,  NEUMAYER DEBORAH ANN

IPC: H01L21/768 ,  H01L21/312

Abstract: An interconnect structure is provided that includes at least one patterned and cured low-k material (18', 22') located on a surface of a patterned graded cap layer (14). The at least one cured and patterned low-k material and the patterned graded cap layer each have conductively filled regions (26) embedded therein. The patterned and cured low-k material is a cured product of a functionalized polymer, copolymer, or a blend including at -least two of any combination of polymers and/or copolymers having one or more acid-sensitive imageable groups, and the graded cap layer includes a lower region that functions as a barrier region and an upper region that has antireflective properties of a permanent antireflective coating.