公开(公告)号：IE79088B1

公开(公告)日：1998-04-08

申请号：IE960846

申请日：1996-12-02

Applicant: IBM

Inventor： ANDRICACOS PANAYOTIS CONSTANTI ,  DATTA MADAV ,  DELIGIANNI HARIKLIA ,  HORKANS WILMA JEAN ,  KANG SUNG KWON ,  KWIETNIAK KEITH THOMAS ,  MATHAD GANGADHARA SWAMI ,  PURUSHOTHAMAN SAMPATH ,  SHI LEATHEN ,  TONG HO-MING

IPC: B23K35/26 ,  B23K35/00 ,  B32B15/01 ,  C22C13/00 ,  C22C13/02 ,  H01L21/60 ,  H01L23/485 ,  H01L23/488

Abstract: An interconnection structure suitable for the connection of microelectronic circuit chips to packages is provided by this invention. In particular, the invention pertains to the area-array or flip-chip technology often called C4 (controlled collapse chip connection). The structure comprises an adhesion/barrier layer deposited on a passivated substrate (e.g., a silicon wafer), optionally an additional adhesion layer, a solderable layer of a metal selected from the group consisting of Ni, Co, Fe, NiFe, NiCo, CoFe and NiCoFe on the adhesion/barrier layer, and a lead-free solder ball comprising tin as the predominate component and one or more alloying elements selected from Bi, Ag, and Sb, and further optionally including one or more elements selected from the group consisting of Zn, In, Ni, Co and Cu.

公开(公告)号：IE960846A1

公开(公告)日：1997-09-24

申请号：IE960846

申请日：1996-12-02

Applicant: IBM

Inventor： ANDRICACOS PANAYOTIS CONSTANTI ,  DATTA MADAV ,  DELIGIANNI HARIKLIA ,  HORKANS WILMA JEAN ,  KANG SUNG KWON ,  KWIETNIAK KEITH THOMAS ,  MATHAD GANGADHARA SWAMI ,  PURUSHOTHAMAN SAMPATH ,  SHI LEATHEN ,  TONG HO-MING

IPC: B23K35/26 ,  B23K35/00 ,  B32B15/01 ,  C22C13/00 ,  C22C13/02 ,  H01L21/60 ,  H01L23/485 ,  H01L23/488

Abstract: An interconnection structure suitable for the connection of microelectronic circuit chips to packages is provided by this invention. In particular, the invention pertains to the area-array or flip-chip technology often called C4 (controlled collapse chip connection). The structure comprises an adhesion/barrier layer deposited on a passivated substrate (e.g., a silicon wafer), optionally an additional adhesion layer, a solderable layer of a metal selected from the group consisting of Ni, Co, Fe, NiFe, NiCo, CoFe, and NiCoFe on the adhesion/barrier layer, and lead free solder ball comprising tin as the predominate component and one or more alloying elements selected from Bi, Ag, and Sb, and further optionally including one or more elements selected from the group consisting of Zn, In, Ni, Co and Cu.