公开(公告)号：JP2004046098A

公开(公告)日：2004-02-12

申请号：JP2003128938

申请日：2003-05-07

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ALLEN ROBERT DAVID ,  GREGORY BUREITA ,  BROCK PHILLIP ,  DIPIETRO RICHARD A ,  FENZEL-ALEXANDER DEBRA ,  LARSON CARL ,  MEDEIROS DAVID ,  PFEIFFER DIRK ,  SOORIYAKUMARAN RATNAM ,  TRUONG HOA D ,  WALLRAFF GREGORY M

IPC: C08F20/22 ,  C08F220/28 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

CPC classification number: C08F220/22 ,  C08F220/28 ,  G03F7/0046 ,  G03F7/0382 ,  Y10S430/108

Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition containing a polymer having at least one methacrylate monomer and to provide a method of pattering a substrate using the photoresist composition. SOLUTION: The photoresist composition contains a methacrylate monomer of formula 1 where R 1 represents hydrogen (H), a linear or branched 1-20C alkyl group or a semi- or perfluorinated linear or branched 1-20C alkyl group; where R 2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF 3 ) group bonded to each carbon of the substituted aliphatic group or a substituted or unsubstituted aromatic group; and where R 3 represents hydrogen (H), methyl (CH 3 ), trifluoromethyl (CF 3 ), difluoromethyl (CHF 2 ) or fluoromethyl (CH 2 F). COPYRIGHT: (C)2004,JPO

公开(公告)号：AT477517T

公开(公告)日：2010-08-15

申请号：AT02786917

申请日：2002-12-05

Applicant: IBM

Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID ,  PETRILLO KAREN ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/30

公开(公告)号：GB2489645A

公开(公告)日：2012-10-03

申请号：GB201213664

申请日：2010-10-22

Applicant: IBM

Inventor： BURNS SEAN ,  MEDEIROS DAVID ,  PFEIFFER DIRK

IPC: G03F7/00 ,  C08G77/00

Abstract: An antireflective hardmask composition layer including a polymer having Si-O and non- silicon inorganic units in its backbone. The polymer includes chromophore and transparent moieties and a crosslinking component. The antireflective hardmask composition layer is employed in a method of forming a patterned material on a substrate.