公开(公告)号：DE3880051T2

公开(公告)日：1993-10-28

申请号：DE3880051

申请日：1988-07-12

Applicant: IBM

Inventor： COTE WILLIAM J ,  KAANTA CARTER W GRANDVIEW ROAD ,  LEACH MICHAEL A ,  PAULSEN JAMES K STEAM MILL ROA

IPC: H01L21/3205 ,  H01L21/768 ,  H01L21/90

公开(公告)号：DE68909168T2

公开(公告)日：1994-04-21

申请号：DE68909168

申请日：1989-10-21

Applicant: IBM

Inventor： COTE WILLIAM J ,  LEACH MICHAEL A

IPC: B24B37/04 ,  B24B49/16 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/00

公开(公告)号：DE3880051D1

公开(公告)日：1993-05-13

申请号：DE3880051

申请日：1988-07-12

Applicant: IBM

Inventor： COTE WILLIAM J ,  KAANTA CARTER W GRANDVIEW ROAD ,  LEACH MICHAEL A ,  PAULSEN JAMES K STEAM MILL ROA

IPC: H01L21/3205 ,  H01L21/768 ,  H01L21/90

公开(公告)号：DE3852370T2

公开(公告)日：1995-05-24

申请号：DE3852370

申请日：1988-09-22

Applicant: IBM

Inventor： COTE WILLIAM J ,  KERBAUGH MICHAEL L ,  KENNEY DONALD M ,  LEACH MICHAEL A ,  ROBINSON JEFFREY A ,  SWEETSER ROBERT W

IPC: H01L21/302 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/31 ,  H01L21/312

公开(公告)号：CA1271267A

公开(公告)日：1990-07-03

申请号：CA562616

申请日：1988-03-28

Applicant: IBM

Inventor： CRONIN JOHN E ,  LEACH MICHAEL A

IPC: H01L23/52 ,  H01L21/3205 ,  H01L23/538 ,  H05K1/02 ,  H05K3/46

Abstract: A coaxial wiring structure that is constructed by depositing and etching a series of conductor layers and insulator layers. More specifically, the shielded transmission line of the invention comprises a first plate structure disposed on a first insulator layer disposed on a substrate; a second insulator layer disposed on the first insulator layer and the first plate structure, the second insulator layer having first troughs exposing end portions of the first plate structure; a central conductor and at least two peripheral conductors disposed on the second insulator layer, the two peripheral conductors contacting the end portions of the first plate structure through the first troughs; a third insulator layer disposed on the second insulator layer, the two peripheral conductors, and the central conductor, the third insulator layer having second troughs exposing respective ones of the peripheral conductors; and an upper plate structure formed on the third insulator layer, the upper plate structure contacting the peripheral conductors through the second troughs. In combination, the upper plate structure, the peripheral conductor structures and the lower plate structure surround the central conductor and are insulated therefrom by the respective insulator layers. The surrounding conductors are coupled to ground potential, and high frequency transmission signals are propagated along the central conductor.

公开(公告)号：DE3852370D1

公开(公告)日：1995-01-19

申请号：DE3852370

申请日：1988-09-22

Applicant: IBM

Inventor： COTE WILLIAM J ,  KERBAUGH MICHAEL L ,  KENNEY DONALD M ,  LEACH MICHAEL A ,  ROBINSON JEFFREY A ,  SWEETSER ROBERT W

IPC: H01L21/302 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/31 ,  H01L21/312

公开(公告)号：DE68909168D1

公开(公告)日：1993-10-21

申请号：DE68909168

申请日：1989-10-21

Applicant: IBM

Inventor： COTE WILLIAM J ,  LEACH MICHAEL A

IPC: B24B37/04 ,  B24B49/16 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/00

公开(公告)号：CA1306072C

公开(公告)日：1992-08-04

申请号：CA556673

申请日：1988-01-15

Applicant: IBM

Inventor： CRONIN JOHN E ,  KAANTA CARTER W ,  LEACH MICHAEL A ,  LEE PEI-ING P ,  PAN PAI-HUNG

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532 ,  H01L29/43 ,  H01L29/49 ,  H01L29/78 ,  H01L21/285 ,  H01L29/40 ,  H01L23/48

Abstract: B??-86-011 The present invention provides a conductive structure for use in semiconductor devices. The structure can be used to interconnect the various diffusion regions or electrodes of devices formed on a processed semiconductor substrate to a layer of metal, to interconnect overlying layers of metal or to provide the gate electrode of an FET device formed on the surface of a semiconductor substrate. Various embodiments of the invention are described, but in broad form the active metallurgy of the present invention comprises a thin layer of titanium nitride and a thick layer of a refractory metal, e.g., tungsten or molybdenum, overlying the titanium nitride layer.