Abstract:
Methods for testing a semiconductor circuit (10) including testing the circuit and modifying a well bias (14, 18) of the circuit during testing. The methods improve the resolution of voltage-based and IDDQ testing and diagnosis by modifying well bias during testing. In addition, the methods provide more efficient stresses during stress testing. The methods apply to ICs where the semiconductor well (wells and/or substrates) are wired separately from the chip VDD and GND, allowing for external control (40) of the well potentials during test. In general, the methods rely on using the well bias to change transistor threshold voltages.
Abstract:
A voltage island architecture wherein the source voltage of each voltage island can be independently turned on/off or adjusted during a scan-based test. The architecture includes a plurality of voltage islands, each powered by a respective island source voltage, and a testing circuit, coupled to the voltage islands, and powered by a global source voltage that is always on during test, wherein each island source voltage may be independently controlled during test.