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公开(公告)号：JP2009235414A
公开(公告)日：2009-10-15
申请号：JP2009138295
申请日：2009-06-09
Applicant: Internatl Business Mach Corp
, Sumitomo Bakelite Co Ltd , インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation , 住友ベークライト株式会社 Inventor： JAYARAMAN SAIKUMAR , GOODALL BRIAN L , RHODES LARRY F , SHICK ROBERT A , VICARI RICHARD , ROBERT D ALLEN , JULIAN OPITZ , RATONAMU SOORIYAKUMARAN , WALLOW THOMAS
IPC: C08F232/00 , C08F4/80 , C08F32/08 , C08F232/08 , C08G61/06 , C08G61/08 , G03F7/004 , G03F7/038 , G03F7/039
CPC classification number: C08F232/08 , C08G61/08 , G03F7/0045 , G03F7/0382 , G03F7/039 , Y10S430/115
Abstract: PROBLEM TO BE SOLVED: To provide a polycyclic polymer and a polycyclic resist composition useful for a photoresist composition transparent to a short wavelength of image focusing irradiation, and having resistance in a dry etching method. SOLUTION: The present invention uses the resist composition comprising the polycyclic polymer containing repeated aromatic pendant groups along a polymer principal chain. The polymer exhibits a light transparent property with respect to a deep UV wavelength, and is useful for an application to a high resolution photolithography. The polymer is useful, in particular, in chemically amplified positive and negative type gradation resists. COPYRIGHT: (C)2010,JPO&INPIT
Abstract translation: 要解决的问题：提供一种可用于对短波长图像聚焦照射透明的光致抗蚀剂组合物的多环聚合物和多环抗蚀剂组合物，并且在干蚀刻方法中具有电阻。 解决方案：本发明使用包含沿着聚合物主链含有重复芳族侧基的多环聚合物的抗蚀剂组合物。 该聚合物相对于深UV波长显示出透光性，并且可用于高分辨率光刻的应用。 该聚合物特别适用于化学放大的正型和负型层压抗蚀剂。 版权所有（C）2010，JPO＆INPIT
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公开(公告)号：JP2002014472A
公开(公告)日：2002-01-18
申请号：JP2001130763
申请日：2001-04-27
Applicant: IBM
Inventor： WALLOW THOMAS I , ROBERT D ALLEN , PHILIP JOE BROCK , DIPIETRO RICHARD ANTHONY , ITO HIROSHI , TRUONG HOA DAO , VARANASI PUSHKARA RAO
IPC: G03F7/004 , G03F7/039 , G03F7/11 , G03F7/40 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition capable of ensuring suitability to high resolution lithography using imaging radiation of 193 nm and to provide a lithographic process using the photoresist composition. SOLUTION: An acid catalyzed positive photoresist composition is provided by using a resist composition containing a cycloolefin polymer with a cydoolefin monomer having a lactone moiety. The photoresist can be imaged with radiation of 193 nm and is developed to form a photoresist structure with improved development characteristics and improved etching resistance. The monomer has no oxygen atom between the lactone moiety and a cycloolefin ring. The lactone moiety is appropriately spirolactone (5- or 6-membered ring) which bonds directly to the cycloolefin ring.
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Patent Agency Ranking
公开(公告)号：JP2001356482A
公开(公告)日：2001-12-26
申请号：JP2001130713
申请日：2001-04-27
Applicant: IBM
Inventor： ROBERT D ALLEN , PHILIP JOE BROCK , DIPIETRO RICHARD ANTHONY , ITO HIROSHI , VARANASI PUSHKARA RAO
IPC: C08F222/06 , C08F222/40 , C08F232/00 , C08K5/00 , C08L45/00 , G03F7/004 , G03F7/039 , G03F7/11 , G03F7/40 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition having so improved resolution as to enable high resolution lithography performance using imaging radiation of 193 nm. SOLUTION: The photoresist composition is obtained by using an imaging copolymer so as to improve a known alternating copolymer-base photoresist. The imaging copolymer is characterized by the presence of at least a third monomer which enhances the resolution of the photoresist. The performance of the composition is further improved by using a bulky acid active protective group on the imaging copolymer. An alkyl functional cyclicolefin is particularly suitable for use as the third monomer.
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公开(公告)号：SG90720A1
公开(公告)日：2002-08-20
申请号：SG200001282
申请日：2000-03-09
Applicant: IBM
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公开(公告)号：MY126758A
公开(公告)日：2006-10-31
申请号：MYPI20000517
申请日：2000-02-15
Applicant: IBM
Inventor： PUSHKARA RAO VARANASI , JOSEPH F MANISCALCO , MARGARET C LAWSON , ANN MARIE MEWHERTER , MAHMOUD M KHOJASTEH , GEORGE M JORDHAMO , ROBERT D ALLEN , JULIANN OPITZ , HIROSHI ITO
Abstract: ACID-CATALYZED POSITIVE PHOTORESIST COMPOSITIONS WHICH ARE IMAGEABLE WITH 193 NM RADIATION AND ARE DEVELOPABLE TO FORM PHOTORESIST STRUCTURES OF HIGH RESOLUTION AND HIGH ETCH RESISTANCE ARE ENABLED BY THE USE OF A COMBINATION OF CYCLIC OLEFIN POLYMER, PHOTOSENSITIVE ACID GENERATOR AND BULKY HYDROPHOBIC ADDITIVE WHICH IS SUBSTANTIALLY TRANSPARENT TO 193 NM RADIATION. THE CYCLIC OLEFIN POLYMERS CONTAIN I) CYCLIC OLEFIN UNITS HAVING ACIDIC POLAR FUNCTIONAL MOIETIES THAT PROMOTE SOLUBILITY IN AQUEOUS ALKALINE SOLUTIONS, AND II) CYCLIC OLEFIN UNITS HAVING ACID LABILE MOIETIES THAT INHIBIT SOLUBILITY IN AQUEOUS SOLUTIONS.
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公开(公告)号：BR112021001429A2
公开(公告)日：2021-04-27
申请号：BR112021001429
申请日：2019-08-30
Applicant: IBM , SUBSEA 7 US LLC
Inventor： ALIREZA RAHIMI , JEANNETTE M GARCIA , JOHN HOBBS , MICHAEL FIRMIAN , ROBERT D ALLEN
IPC: C08K5/3412 , C08K5/3415 , C08L23/14 , C09D123/14
Abstract: a presente invenção refere-se a composições extrudáveis que foram preparadas compreendendo poli(propileno) e um aditivo líquido compreendendo um grupo lactama. as composições podem conter outros aditivos opcionais, que incluem um poli-hemiaminal, antioxidantes, absorvedores de luz uv e tensoativos. as composições extrudadas têm maior alongamento percentual na ruptura e menor módulo de young em comparação com poli(propileno) extrudado sem o aditivo líquido. estas e outras melhorias de propriedades tornam as composições extrudadas atraentes para formar revestimentos de junta de campo para aplicações em dutos submarinos.
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公开(公告)号：SG96547A1
公开(公告)日：2003-06-16
申请号：SG200001379
申请日：2000-03-10
Applicant: IBM
Inventor： PUSHKARA RAO VARANASI , ROBERT D ALLEN , THOMAS I WALLOW , JULIANN OPTIZ , RICHARD A DEPIETRO , MARGARET C LAWSON , ANN MARIE MEWHERTER , JOSEPH F MANISCALCO , GEORGE M JORDHAMO
IPC: C08K5/41 , G03F7/004 , G03F7/039 , H01L21/027
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