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公开(公告)号：JPH04309289A
公开(公告)日：1992-10-30
申请号：JP33464791
申请日：1991-12-18
Applicant: IBM
Inventor： PIITAA JIEIMUZU DEYUUKU , KURISUTEINA WARERIA SEMUKOU
Abstract: PURPOSE: To provide a method for manufacturing a microelectronic package, having at least one layer formed of copper-Invar-copper core sealed between a pair of dielectric films. CONSTITUTION: A method includes a step of exposing the copper-Invar-copper surface of a copper-Invar-copper core, for instance, a step of exposing the inner copper-Invar-copper by exposing the circumference of the copper-Invar-copper core or by making a hole that penetrates a layer. Then, the copper-Invar-copper is formed, namely, back-etched. Such step is an electrolytic process, wherein a package is impregnated with an electrolytic solution which is substantially neutral in pH, including a counter electrode. The electrolytic solution wets the exposed surface of the copper-Invar-copper core. The exposed surface of the copper-Invar-copper core is made anode with respect to the counter electrode, and a voltage is applied in between. As a result, the copper-Invar-copper surface is electrochemically etched and formed.
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