Abstract:
A method and device is provided for performing rotate operations on operands having a size of 2N bits, alternatively, for performing rotate operations on two operands each having a size of N bits to the left, whereby N is an integer. The device includes a control unit being adapted for exchanging M least significant bits of the output of a first rotate circuit with M least significant bits of the output of a second rotate circuit, when M =N is true, whenever an input having the width of 2N is to be rotated by M bits. For rotator arrays rotating N bit wide data to the right, it functions correspondingly.
Abstract:
An improved hardware circuit simulation method in particular for history-dependent and cyclic operation sensible hardware circuits, like SOI-type hardware, for example, checks for correct cyclic boundary conditions by performing (110) a first run of a prior art DC simulation with input voltage conditions belonging to CYCLE START, and by carrying out (120) a second DC simulation with input voltage conditions belonging to CYCLE STOP. After comparing (130) the results, e.g., comparing the node voltages, any mismatches can be determined which serve as a hint to non-compatibility with cyclic operation. Thus, the design is able to be re-designed (140) before being simulated in vain with a great amount of work and computing time. A transient simulation (150) can be appended for automated correction (160, 170) of dynamic errors.
Abstract:
PROBLEM TO BE SOLVED: To match and adjust a drift on a bit line to a high-speed system execution mode or low-power test mode in accordance with a feed voltage by using a small skew invertor with a switchable PFET feedback loop. SOLUTION: Gate terminals of PFETs P1, P21 are connected to an output of an invertor I1 which is in turn connected to a bit line BL. A signal 'test' is low in a system execution mode. When '1' is to be read from a memory cell, the PFET P1 is turned on and works as a bleeder element to prevent the bit line BL from drifting towards a feed voltage Vdd because of a threshold or smaller current. The signal 'test' is high in a test mode, wherein the PFET P1 works as a keeper element and constitutes a half latch with the invertor I1. The keeper element PFET P1 is reinforced in function by a parallel keeper route of PFETs P21, P22. COPYRIGHT: (C)2000,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a new method restoring a bit line and a data line from a memory cell. SOLUTION: All bit lines (510, 511) and all data lines (517, 518) are connected during a restoration operation, and all restored FET (503, 504, 505) are used for supplying a required recharging current. Successively a non-address specified bit line is turned off by its bit switch. Thus, a size of a recharging device can be made considerably small.
Abstract:
Die vorliegende Offenbarung bezieht sich auf einen Stromerfassungs-Leseverstärker zum Verwenden als Leseverstärker bei einer Speicheranordnung von Speicherzellengruppen, wobei in allen Zellen der Speicherzellengruppen wenigstens ein Leseanschluss enthalten ist, der durch eine Bitleitung mit einem Leseverstärker verbunden ist, und wobei die Leseverstärker mit einem Datenausgang verbunden sind. Ein Stromerfassungs-Leseverstärker enthält einen Spannungsregler, um die Bitleitungsspannung auf einem konstanten Spannungswert unterhalb einer Stromversorgungsspannung und oberhalb einer Masse zu halten, eine Messschaltung zum Erkennen eines hohen Stromwerts und eines niedrigen Stromwerts in einem Eingangssignal und einen Generator zum Erzeugen eines Ausgangssignals mit einem hohen Spannungswert, wenn das Eingangssignal mit hohen Stromwert erkannt wird, und zum Erzeugen eines Ausgangssignals mit einem niedrigen Spannungswert, wenn der niedrige Stromwerterkannt wird.
Abstract:
Eine Ausführungsform kann eine mikroelektronische Einheit enthalten. Die mikroelektronische Einheit kann ein erstes Paar Transistoren enthalten, die vertikal gestapelt und in Reihe geschaltet sind. Beide Transistoren des ersten Paars Transistoren sind vom selben Typ. Die mikroelektronische Einheit kann ein zweites Paar Transistoren enthalten, die parallel geschaltet sind. Das zweite Paar Transistoren ist von einem anderen Typ als das erste Paar Transistoren. Das erste Paar Transistoren und das zweite Paar Transistoren sind im Wesentlichen senkrecht zu der Mehrzahl Schichten angeordnet.
Abstract:
A storage device and a method for determining the entry with the highest priority in a buffer memory. The method is characterized by the steps of operating a plurality of priority subfilter circuits each of them covering a disjunct subgroup of the total of entries and each selecting the entry with the highest subgroup priority, and selecting the entry associated with the highest priority subgroup. The storage device is able to be allocated and deallocated repeatedly during processing program instructions in a computer system. The storage device is further characterized by an operator for operating a plurality of priority subfilter circuits. Each of priority subfilter circuits covers a disjunct subgroup of the total of entries and each selecting the entry with the highest subgroup priority. The storage device is still further characterized by a selector for selecting the entry associated with the highest priority subgroup.