公开(公告)号：WO02088077A3

公开(公告)日：2003-02-27

申请号：PCT/US0212885

申请日：2002-04-22

Applicant: IBM

Inventor： PUSHKARA RAO VARANASI ,  LAWSON MARGARET C ,  LI WENJIE

IPC: G03F7/039 ,  H01L21/027 ,  G03F7/004 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

CPC classification number: G03F7/0395 ,  G03F7/0392 ,  Y10S430/106

Abstract: Acid-catalyzed positive resist compositions which are imageable with 193nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer having a monomer with a pendant group containing plural acid labile moieties. Preferred pendant groups containing plural acid labile moieties are characterized by the presence of a bulky end group.

Abstract translation: 可通过193nm辐射和/或可能的其它辐射成像并且可显影以形成改进的显影特性和改善的耐蚀刻性的抗蚀剂结构的酸催化的正性抗蚀剂组合物通过使用含有具有带侧基的单体的成像聚合物的抗蚀剂组合物 该基团含有多个酸不稳定部分。 含有多个酸不稳定部分的优选侧基的特征在于存在大体积端基。

公开(公告)号：MY126722A

公开(公告)日：2006-10-31

申请号：MYPI20000524

申请日：2000-02-15

Applicant: IBM

Inventor： PUSHKARA RAO VARANASI ,  JOSEPH F MANISCALCO

IPC: G03F7/004 ,  G03F7/028 ,  G03F7/039

Abstract: ACID-CATALYZED POSITIVE PHOTORESIS COMPOSITIONS WHICH ARE IMAGEABLE WITH 193NM RADIATION AND ARE DEVELOPABLE TO FROM PHOTORESIST STRUCTURE OF HIGH RESOLUTION AND HIGH ETCH RESISTANCE ARE ENABLED BY THE USE OF A COMBINATION OF CYCLIC OLEFIN POLYMER, PHOTOSENSITIVE ACID GENERATOR AND A HYDROPHOBIC NON-STEROIDAL ALICYCLIC COMPONENT. THE CYCLIC OLEFIN POLYMERS PREFERABLY CONTAIN I) CYCLIC OLEFIN UNITS HAVING POLAR FUNCTIONAL MOIETIES, II) CYCLIC OLEFIN UNITS HAVING ACID LABILE MOIETIES THAT INHIBIT SOLUBILITY IN AQUEOUS ALKALINE SOLUTIONS.

公开(公告)号：SG96547A1

公开(公告)日：2003-06-16

申请号：SG200001379

申请日：2000-03-10

Applicant: IBM

Inventor： PUSHKARA RAO VARANASI ,  ROBERT D ALLEN ,  THOMAS I WALLOW ,  JULIANN OPTIZ ,  RICHARD A DEPIETRO ,  MARGARET C LAWSON ,  ANN MARIE MEWHERTER ,  JOSEPH F MANISCALCO ,  GEORGE M JORDHAMO

IPC: C08K5/41 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

公开(公告)号：MY126758A

公开(公告)日：2006-10-31

申请号：MYPI20000517

申请日：2000-02-15

Applicant: IBM

Inventor： PUSHKARA RAO VARANASI ,  JOSEPH F MANISCALCO ,  MARGARET C LAWSON ,  ANN MARIE MEWHERTER ,  MAHMOUD M KHOJASTEH ,  GEORGE M JORDHAMO ,  ROBERT D ALLEN ,  JULIANN OPITZ ,  HIROSHI ITO

IPC: G03F7/039 ,  G03F7/027

Abstract: ACID-CATALYZED POSITIVE PHOTORESIST COMPOSITIONS WHICH ARE IMAGEABLE WITH 193 NM RADIATION AND ARE DEVELOPABLE TO FORM PHOTORESIST STRUCTURES OF HIGH RESOLUTION AND HIGH ETCH RESISTANCE ARE ENABLED BY THE USE OF A COMBINATION OF CYCLIC OLEFIN POLYMER, PHOTOSENSITIVE ACID GENERATOR AND BULKY HYDROPHOBIC ADDITIVE WHICH IS SUBSTANTIALLY TRANSPARENT TO 193 NM RADIATION. THE CYCLIC OLEFIN POLYMERS CONTAIN I) CYCLIC OLEFIN UNITS HAVING ACIDIC POLAR FUNCTIONAL MOIETIES THAT PROMOTE SOLUBILITY IN AQUEOUS ALKALINE SOLUTIONS, AND II) CYCLIC OLEFIN UNITS HAVING ACID LABILE MOIETIES THAT INHIBIT SOLUBILITY IN AQUEOUS SOLUTIONS.

公开(公告)号：MY122873A

公开(公告)日：2006-05-31

申请号：MYPI20021340

申请日：2002-04-11

Applicant: IBM

Inventor： PUSHKARA RAO VARANASI ,  MARGARET C LAWSON ,  WENJI LI

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027

Abstract: ACID-CATALYZED POSITIVE RESIST COMPOSITIONS WHICH ARE IMAGEABLE WITH 193 NM RADIATION AND/OR POSSIBLY OTHER RADIATION AND ARE DEVELOPABLE TO FORM RESIST STRUCTURES OF IMPROVED DEVELOPMENT CHARACTERISTICS AND IMPROVED ETCH RESISTANCE ARE ENABLED BY THE USE OF RESIST COMPOSITIONS CONTAINING IMAGING POLYMER HAVING A MONOMER WITH A PENDANT GROUP CONTAINING PLURAL ACID LABILE MOIETIES. PREFERRED PENDANT GROUPS CONTAINING PLURAL ACID LABILE MOIETIES ARE CHARACTERIZED BY THE PRESENCE OF A BULKY END GROUP.

公开(公告)号：AU2002305222A1

公开(公告)日：2002-11-11

申请号：AU2002305222

申请日：2002-04-22

Applicant: IBM

Inventor： LI WENJIE ,  PUSHKARA RAO VARANASI ,  LAWSON MARGARET C

IPC: G03F7/039 ,  H01L21/027 ,  G03F7/004 ,  G03F7/40 ,  G03F7/32 ,  G03F7/38

Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer having a monomer with a pendant group containing plural acid labile moieties. Preferred pendant groups containing plural acid labile moieties are characterized by the presence of a bulky end group.

公开(公告)号：SG90720A1

公开(公告)日：2002-08-20

申请号：SG200001282

申请日：2000-03-09

Applicant: IBM

Inventor： PUSHKARA RAO VARANASI ,  JOSEPH F MANISCALCO ,  MARGARET C LAWSON ,  ANN MARIE MEWHERTER ,  MAHMOUD M KHOJASTEH ,  GEORGE M JORDHAMO ,  ROBERT D ALLEN ,  JULIANN OPTIZ ,  HIROSHI ITO

IPC: G03F7/027 ,  G03F7/039