Abstract:
The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.
Abstract:
Acid-catalyzed positive resist compositions which are imageable with 193nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer having a monomer with a pendant group containing plural acid labile moieties. Preferred pendant groups containing plural acid labile moieties are characterized by the presence of a bulky end group.
Abstract:
Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer having a monomer with a pendant group containing plural acid labile moieties. Preferred pendant groups containing plural acid labile moieties are characterized by the presence of a bulky end group.
Abstract:
Photoresist composition comprises: (a) a cyclic olefin polymer, (b) a photosensitive acid generating compound and (c) a hydrophobic additive selected from non-steroidal alicyclic and multi-alicyclic components and a saturated steroid component.