Abstract:
PROBLEM TO BE SOLVED: To provide a method of forming a sub-lithographic structure utilizing polymer directional self-organization. SOLUTION: The method includes a block copolymer self-organization. The method of forming holes in a regular or an optional arrangement starting from an opening (inside one or a plurality of substrates) having a targeted CD (critical dimension) is explained. Importantly, the percentage dispersion of the average diameter of the formed holes is smaller than the percentage dispersion of the average diameter of the initial opening. The formed holes (or vias) can be transferred to the lower layer substrate, and then, these holes can be filled back with materials such as metal conductors. The method enables the creation of vias having a narrower pitch or superior CD evenness even in the technological node of 22 nm or below. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for reducing a proximity effect of electron beam lithography. SOLUTION: Resolution of features and lines drawn by a resist is improved by applying an electric field below the resist to reduce the proximity effect associated with electron beam scattering. Electrons in electron beams may have an extremely high energy (for example, >> 10 keV), however, it is possible to reduce the number of electrons that enter a resist material again after being scattered in a substrate even under a small electric field, therefore, energy deposited in the resist by the electrons is reduced. One advantage of this technique is that neither a high potential nor a high electric field is required. Therefore, it is also possible to apply this described method to an already existing tool by slightly modifying an electron beam apparatus. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
A chemical pattern layer (32, 33) including an orientation control material (32) and a prepattern material (33) is formed over a substrate (10). The chemical pattern layer (32, 33) includes alignment-conferring features (33D) and additional masking features (33S). A self-assembling material is applied and self-aligned over the chemical pattern layer. The polymeric block components align to the alignment-conferring features, while the alignment is not altered by the additional masking features. A first polymeric block component (40) is removed selective to a second polymeric block component (50) by an etch to form second polymeric block component portions having a pattern. A composite pattern of the pattern of an etch-resistant material within the chemical pattern layer and the pattern of the second polymeric block component portions can be transferred into underlying material layers employing at least another etch.
Abstract:
A method (and resultant structure) of forming a plurality of masks, includes creating a reference template, using imprint lithography to print at least one reference template alignment mark on all of a plurality of mask blanks for a given chip set, and printing sub-patterns on each of the plurality of mask blanks, and aligning the sub-patterns to the at least one reference template alignment mark.