Method for reducing proximity effect of electron beam lithography
    2.
    发明专利
    Method for reducing proximity effect of electron beam lithography 有权
    减少电子束光刻临近效应的方法

    公开(公告)号:JP2005340831A

    公开(公告)日:2005-12-08

    申请号:JP2005153656

    申请日:2005-05-26

    Abstract: PROBLEM TO BE SOLVED: To provide a method for reducing a proximity effect of electron beam lithography.
    SOLUTION: Resolution of features and lines drawn by a resist is improved by applying an electric field below the resist to reduce the proximity effect associated with electron beam scattering. Electrons in electron beams may have an extremely high energy (for example, >> 10 keV), however, it is possible to reduce the number of electrons that enter a resist material again after being scattered in a substrate even under a small electric field, therefore, energy deposited in the resist by the electrons is reduced. One advantage of this technique is that neither a high potential nor a high electric field is required. Therefore, it is also possible to apply this described method to an already existing tool by slightly modifying an electron beam apparatus.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:提供减小电子束光刻的邻近效应的方法。 解决方案:通过在抗蚀剂下方施加电场以减少与电子束散射相关的接近效应,改善了由抗蚀剂绘制的特征和线的分辨率。 电子束中的电子可能具有非常高的能量(例如,>> 10keV),然而,即使在小的电场下也可以在甚至在基板中散射到基板之后再次减少进入抗蚀剂材料的电子数, 因此,减少了由电子沉积在抗蚀剂中的能量。 该技术的一个优点是既不需要高电位也不需要高电场。 因此,也可以通过稍微修改电子束装置将这种描述的方法应用于现有的工具。 版权所有(C)2006,JPO&NCIPI

    FORMATION OF A COMPOSITE PATTERN INCLUDING A PERIODIC PATTERN SELF-ALIGNED TO A PREPATTERN
    3.
    发明申请
    FORMATION OF A COMPOSITE PATTERN INCLUDING A PERIODIC PATTERN SELF-ALIGNED TO A PREPATTERN 审中-公开
    一个复合图案的形成,包括一个自定义为一个预处理的周期性图案

    公开(公告)号:WO2014120320A3

    公开(公告)日:2014-10-02

    申请号:PCT/US2013069988

    申请日:2013-11-14

    Applicant: IBM

    CPC classification number: H05K3/007 G03F7/0002 H05K2203/0548

    Abstract: A chemical pattern layer (32, 33) including an orientation control material (32) and a prepattern material (33) is formed over a substrate (10). The chemical pattern layer (32, 33) includes alignment-conferring features (33D) and additional masking features (33S). A self-assembling material is applied and self-aligned over the chemical pattern layer. The polymeric block components align to the alignment-conferring features, while the alignment is not altered by the additional masking features. A first polymeric block component (40) is removed selective to a second polymeric block component (50) by an etch to form second polymeric block component portions having a pattern. A composite pattern of the pattern of an etch-resistant material within the chemical pattern layer and the pattern of the second polymeric block component portions can be transferred into underlying material layers employing at least another etch.

    Abstract translation: 在衬底(10)上形成包括取向控制材料(32)和预模式材料(33)的化学图案层(32,33)。 化学图案层(32,33)包括对准赋予特征(33D)和附加掩模特征(33S)。 自组装材料在化学图案层上施加并自对准。 聚合物嵌段组分与对准赋予特征对准,而对准不会被附加的掩蔽特征所改变。 通过蚀刻将第一聚合物嵌段组分(40)选择性地除去第二聚合物嵌段组分(50)以形成具有图案的第二聚合物嵌段组分部分。 化学图案层内的抗蚀刻材料的图案和第二聚合物嵌段组分部分的图案的复合图案可以使用至少另一种蚀刻转移到下面的材料层中。

    4.
    发明专利
    未知

    公开(公告)号:DE602005007776D1

    公开(公告)日:2008-08-07

    申请号:DE602005007776

    申请日:2005-10-18

    Applicant: IBM

    Abstract: A method (and resultant structure) of forming a plurality of masks, includes creating a reference template, using imprint lithography to print at least one reference template alignment mark on all of a plurality of mask blanks for a given chip set, and printing sub-patterns on each of the plurality of mask blanks, and aligning the sub-patterns to the at least one reference template alignment mark.

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