公开(公告)号：JP2010269304A

公开(公告)日：2010-12-02

申请号：JP2010102303

申请日：2010-04-27

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CHENG JOY ,  DANIEL P SANDERS ,  RETTNER CHARLES T ,  NA YOUNG-HYE ,  DA YANG ,  KAFAI LAI ,  WAI-KIN LI

IPC: B05D7/00 ,  B82B3/00 ,  H01L21/027 ,  H01L21/768

CPC classification number: H01L21/76816 ,  B81B2203/0353 ,  B81B2207/07 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/31144 ,  Y10S438/947

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a sub-lithographic structure utilizing polymer directional self-organization.
SOLUTION: The method includes a block copolymer self-organization. The method of forming holes in a regular or an optional arrangement starting from an opening (inside one or a plurality of substrates) having a targeted CD (critical dimension) is explained. Importantly, the percentage dispersion of the average diameter of the formed holes is smaller than the percentage dispersion of the average diameter of the initial opening. The formed holes (or vias) can be transferred to the lower layer substrate, and then, these holes can be filled back with materials such as metal conductors. The method enables the creation of vias having a narrower pitch or superior CD evenness even in the technological node of 22 nm or below.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种利用聚合物定向自组织形成亚光刻结构的方法。 解决方案：该方法包括嵌段共聚物自组织。 说明从具有目标CD（临界尺寸）的开口（一个或多个基板内）开始以规则或可选布置形成孔的方法。 重要的是，所形成的孔的平均直径的百分比分散度小于初始开口的平均直径的百分比分散。 形成的孔（或通孔）可以转移到下层基板，然后可以用诸如金属导体的材料填充这些孔。 该方法即使在22nm以下的技术节点中也能够创建具有较窄间距或优异CD均匀性的通孔。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2005340831A

公开(公告)日：2005-12-08

申请号：JP2005153656

申请日：2005-05-26

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： MARRIAN CHRISTIE RODERICK K ,  RETTNER CHARLES T

IPC: G03F7/20 ,  H01J37/302 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  H01J2237/31796

Abstract: PROBLEM TO BE SOLVED: To provide a method for reducing a proximity effect of electron beam lithography.
SOLUTION: Resolution of features and lines drawn by a resist is improved by applying an electric field below the resist to reduce the proximity effect associated with electron beam scattering. Electrons in electron beams may have an extremely high energy (for example, >> 10 keV), however, it is possible to reduce the number of electrons that enter a resist material again after being scattered in a substrate even under a small electric field, therefore, energy deposited in the resist by the electrons is reduced. One advantage of this technique is that neither a high potential nor a high electric field is required. Therefore, it is also possible to apply this described method to an already existing tool by slightly modifying an electron beam apparatus.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供减小电子束光刻的邻近效应的方法。 解决方案：通过在抗蚀剂下方施加电场以减少与电子束散射相关的接近效应，改善了由抗蚀剂绘制的特征和线的分辨率。 电子束中的电子可能具有非常高的能量（例如，>> 10keV），然而，即使在小的电场下也可以在甚至在基板中散射到基板之后再次减少进入抗蚀剂材料的电子数， 因此，减少了由电子沉积在抗蚀剂中的能量。 该技术的一个优点是既不需要高电位也不需要高电场。 因此，也可以通过稍微修改电子束装置将这种描述的方法应用于现有的工具。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：WO2014120320A3

公开(公告)日：2014-10-02

申请号：PCT/US2013069988

申请日：2013-11-14

Applicant: IBM

Inventor： CHENG JOY ,  DOERK GREGORY S ,  RETTNER CHARLES T ,  SANDERS DANIEL P

IPC: H01L21/027 ,  G03F1/00 ,  G03F7/20

CPC classification number: H05K3/007 ,  G03F7/0002 ,  H05K2203/0548

Abstract: A chemical pattern layer (32, 33) including an orientation control material (32) and a prepattern material (33) is formed over a substrate (10). The chemical pattern layer (32, 33) includes alignment-conferring features (33D) and additional masking features (33S). A self-assembling material is applied and self-aligned over the chemical pattern layer. The polymeric block components align to the alignment-conferring features, while the alignment is not altered by the additional masking features. A first polymeric block component (40) is removed selective to a second polymeric block component (50) by an etch to form second polymeric block component portions having a pattern. A composite pattern of the pattern of an etch-resistant material within the chemical pattern layer and the pattern of the second polymeric block component portions can be transferred into underlying material layers employing at least another etch.

Abstract translation: 在衬底（10）上形成包括取向控制材料（32）和预模式材料（33）的化学图案层（32,33）。 化学图案层（32,33）包括对准赋予特征（33D）和附加掩模特征（33S）。 自组装材料在化学图案层上施加并自对准。 聚合物嵌段组分与对准赋予特征对准，而对准不会被附加的掩蔽特征所改变。 通过蚀刻将第一聚合物嵌段组分（40）选择性地除去第二聚合物嵌段组分（50）以形成具有图案的第二聚合物嵌段组分部分。 化学图案层内的抗蚀刻材料的图案和第二聚合物嵌段组分部分的图案的复合图案可以使用至少另一种蚀刻转移到下面的材料层中。

公开(公告)号：DE602005007776D1

公开(公告)日：2008-08-07

申请号：DE602005007776

申请日：2005-10-18

Applicant: IBM

Inventor： COLBURN MATTHEW E ,  MARTIN YVES C ,  RETTNER CHARLES T ,  VAN KESSEL THEODORE G ,  WICKRAMASINGHE HEMATHA K

IPC: G03F7/00

Abstract: A method (and resultant structure) of forming a plurality of masks, includes creating a reference template, using imprint lithography to print at least one reference template alignment mark on all of a plurality of mask blanks for a given chip set, and printing sub-patterns on each of the plurality of mask blanks, and aligning the sub-patterns to the at least one reference template alignment mark.