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公开(公告)号：DE2758145A1
公开(公告)日：1978-07-13
申请号：DE2758145
申请日：1977-12-27
Applicant: IBM
Inventor： MCGRODDY JAMES CLEARY , SCOTT BRUCE ALBERT
IPC: H01J17/04 , C23C18/20 , C25D5/02 , G03C1/675 , G03C1/73 , G03C5/58 , G09F9/30 , H01B13/00 , H05K3/10 , H05K3/18 , C25D5/54
Abstract: 1521860 Electro-deposited patterns INTERNATIONAL BUSINESS MACHINES CORP 16 Nov 1977 [30 Dec 1976] 47675/77 Heading C7B Electrically conductive metal films are electrodeposited on a substrate in a predetermined pattern by first photochemically depositing on the substrate an organic #-electron donor halide salt, e.g.: followed by metal electro-deposition, the electrodeposition being accompanied by the simultaneous removal of the organic salt.
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Patent Agency Ranking
公开(公告)号：DE3770540D1
公开(公告)日：1991-07-11
申请号：DE3770540
申请日：1987-07-21
Applicant: IBM
Inventor： JASINSKI JOSEPH MARTIN , MEYERSON BERNARD STEELE , SCOTT BRUCE ALBERT
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公开(公告)号：DE3171036D1
公开(公告)日：1985-07-25
申请号：DE3171036
申请日：1981-09-16
Applicant: IBM
Abstract: This invention relates to a high resolution video storage disk comprising a substrate and a film of a monofunctionalized substituted tetraheterofulvalene compound and a halocarbon deposited on said substrate.
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公开(公告)号：DE3068815D1
公开(公告)日：1984-09-06
申请号：DE3068815
申请日：1980-11-20
Applicant: IBM
Inventor： BRODSKY MARC HERBERT , GREEN DENNIS CLINTON , KUCZA JOSEPH ALBERT , PLECENIK RICHARD MICHAEL , SCOTT BRUCE ALBERT
IPC: H01L31/04 , C23C16/06 , C23C16/24 , C23C16/32 , C23C16/34 , C23C16/40 , H01L21/205 , H01L21/314 , H01L21/316 , H01L21/318 , C23C11/00 , H01L21/02
Abstract: The films (10) are formed on a substrate (9) by means of chemical vapor deposition where a gas atmosphere containing at least one silane or germane of a higher order is used. The gases forming the gas atmosphere are supplied to a region adjacent to the substrate (9) and an excitation energy is applied to those gases preferably with a glow discharge being generated. At least when the gas atmosphere additionally contains a gas reacting with the silane or the germane respectively the pressure of the reactive gases is kept below 0.133 mbar. … The films (10) formed consist of silicon or germanium respectively, or of compounds or alloys of these elements with oxygen, nitrogen, carbon and boron depending on the nature of the additionally available reactive gases. The films (10) preferably hydrated are useful in semiconducting devices.
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公开(公告)号：DE3572200D1
公开(公告)日：1989-09-14
申请号：DE3572200
申请日：1985-02-22
Applicant: IBM
IPC: H01L21/205 , C23C16/44 , C23C16/455 , C30B25/14
Abstract: In a method of homogeneous chemical vapour deposition in which first (22) and second (20) gases are intermixed at a location (28) in the vicinity of a cool substrate (14) onto which a material is to be deposited, the first gas contains at least one constituent of the material to be deposited and is at a temperature less than its pyrolysis temperature and the second gas is heated (18) to a sufficiently high temperature that the intermixing of the gases causes the first gas to decompose.
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公开(公告)号：DE2627828A1
公开(公告)日：1977-01-27
申请号：DE2627828
申请日：1976-06-22
Applicant: IBM
Inventor： ENGLER EDWARD MARTIN , KAUFMAN FRANK BENJAMIN , SCOTT BRUCE ALBERT
Abstract: A method of optically printing conductive characters using charge transfer compounds is provided. The method is characterized by depositing an organic pi electron donor compound dissolved in a halogenated hydrocarbon (halocarbon) on a suitable substrate and selectively exposing the so coated substrate to actinic radiation to obtain a permanent, highly conductive, image.
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