Abstract:
A method of forming CMOS semiconductor (10) materials with PFET (16) and NFET (14) areas formed on a semiconductor substrate (12), covered respectively with a PFET (16) and NFET (14) gate dielectric layers composed of silicon oxide and different degrees of nitridation (18D and 18E) thereof. Provide a silicon substrate (12) with a PFET (16) area and an NFET (14) area and form PFET and NFET gate oxide layers thereover. Provide nitridation of the PFET gate oxide layer above the PFET area to form the PFET gate dielectric layer (42) above the PFET area with a first concentration level of nitrogen atoms in the PFET gate dielectric I ayer above the PFET area. Provide nitridation of the NFET gate oxide layer to form the NFET gate dielectric layer (40) above the NFET area with a different concentration level of nitrogen atoms from the first concentration level. The NFET gate dielectric layer (40) and the PFET gate dielectric layer (42) can have the same thickness.
Abstract:
An apparatus for self-aligning an optical fiber to an optical waveguide. The apparatus includes an optical waveguide chip including: one or more optical waveguides formed on a first substrate, each optical waveguide having a protruding portion; and one or more alignment rails formed on the first substrate, each alignment rail spaced apart from each optical waveguide by a predetermined distance; and an alignment jig including: one or more grooves formed in a second substrate, each groove adapted to receive one protruding portion and each groove supporting one optical fiber in alignment with one optical waveguide; and one or more alignment grooves formed on the second substrate, each alignment groove spaced apart from the grooves by the predetermined distance and adapted to mate with the alignment rails.