公开(公告)号：WO03009380A3

公开(公告)日：2003-08-07

申请号：PCT/GB0201370

申请日：2002-03-21

Applicant: IBM ,  IBM UK

Inventor： CONTI RICHARD ,  DEV PRAKASH ,  DOBUZINSKY DAVID MARK ,  EDELSTEIN DANIEL CHARLES ,  LEE GILL ,  LOW KIA-SENG ,  SHAFER PADRAIC ,  SIMPSON ALEXANDER ,  WRSCHKA PETER

IPC: H01L21/28 ,  H01L21/316 ,  H01L23/532 ,  H01L29/51

CPC classification number: H01L21/28185 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/28194 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3.3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.

Abstract translation: 公开了一种用于在衬底上方具有碳渐变层的绝缘体层的结构和方法，其中在衬底上方的每个连续碳渐变层中的碳浓度增加。 绝缘体包括具有小于3.3的介电常数的低k电介质。 碳渐变层增加了衬底和绝缘体之间以及绝缘体和导体层之间的粘附力。 该结构还可以包括碳梯度层之间的稳定界面。 更具体地说，碳缓变层包括与碳含量在约5％和20％之间的衬底相邻的第一层，在第一层之上的含碳量在约10％和30％之间的第二层，以及第三层 在碳含量在约20％和40％之间的第二层之上。

公开(公告)号：JP2003100680A

公开(公告)日：2003-04-04

申请号：JP2002176781

申请日：2002-06-18

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： ECONOMIKOS LAERTIS ,  SIMPSON ALEXANDER

IPC: B24B57/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/76 ,  B24B37/00

Abstract: PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing method using fixed abrasive by which the thicknesses of oxide layers, particularly, siliceous oxide layers can be reduced quickly and effectively. SOLUTION: This chemical mechanical polishing method is characterized preferably by at least one step of simultaneously using a fixed-abrasive polishing member and an aqueous liquid medium containing an abrasive. When the first oxide layer to be polished has topographic variation, a topography reducing step using the fixed abrasive and an aqueous liquid medium containing a polyelectrolyte may be performed as part of the polishing method, including the reduction of the topography variation (height difference) extended to the oxide layer provided on a substrate before performing this thickness reducing method.

公开(公告)号：WO0249090A3

公开(公告)日：2003-05-01

申请号：PCT/US0144921

申请日：2001-11-29

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： ECONOMIKOS LAERTIS ,  RAMACHANDRAN RAVIKUMAR ,  SIMPSON ALEXANDER

IPC: H01L21/3105

CPC classification number: H01L21/31053

Abstract: A method for polishing a dielectric layer containing silicon (16) provides a fluorine-based compound (34) during a polishing process. The dielectric layer is polished in the presence of the fluorine based compound to accelerate a polishing rate of the dielectric layer.

Abstract translation: 用于抛光含硅（16）的电介质层的方法在抛光过程中提供氟基化合物（34）。 在氟基化合物的存在下对电介质层进行研磨，以加速电介质层的研磨速度。

公开(公告)号：AU2002241147A1

公开(公告)日：2003-03-03

申请号：AU2002241147

申请日：2002-03-21

Applicant: IBM

Inventor： DEV PRAKASH ,  EDELSTEIN DANIEL CHARLES ,  SHAFER PADRAIC ,  SIMPSON ALEXANDER ,  LOW KIA-SENG ,  WRSCHKA PETER ,  CONTI RICHARD ,  DOBUZINSKY DAVID MARK ,  LEE GILL

IPC: H01L21/28 ,  H01L21/316 ,  H01L23/532 ,  H01L29/51

Abstract: A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3.3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.

公开(公告)号：DE10226235A1

公开(公告)日：2003-01-16

申请号：DE10226235

申请日：2002-06-13

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： ECONOMIKOS LAERTIS ,  SIMPSON ALEXANDER

IPC: B24B57/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/76

Abstract: The invention provides fixed-abrasive chemical-mechanical polishing processes which are effective in rapidly reducing thickness of oxide layers, especially siliceous oxides. The processes of the invention are preferably characterized by at least one step involving simultaneous use of a fixed-abrasive polishing element and an aqueous liquid medium containing an abrasive. Where the original oxide layer has topographic variation, the thickness reduction technique of the invention may be preceeded by topography reduction step using a fixed-abrasive and an aqueous medium containing a polyelectrolyte for at least a portion of the polishing process involving reduction in the amount of topographic variation (height differential) across the oxide layer on the substrate.

公开(公告)号：DE10226235B4

公开(公告)日：2010-02-18

申请号：DE10226235

申请日：2002-06-13

Applicant: IBM ,  QIMONDA AG

Inventor： ECONOMIKOS LAERTIS ,  SIMPSON ALEXANDER

IPC: B24B57/02 ,  H01L21/3105 ,  B24B37/04 ,  B24B57/00 ,  C09K3/14 ,  H01L21/304 ,  H01L21/76

Abstract: The invention provides fixed-abrasive chemical-mechanical polishing processes which are effective in rapidly reducing thickness of oxide layers, especially siliceous oxides. The processes of the invention are preferably characterized by at least one step involving simultaneous use of a fixed-abrasive polishing element and an aqueous liquid medium containing an abrasive. Where the original oxide layer has topographic variation, the thickness reduction technique of the invention may be preceeded by topography reduction step using a fixed-abrasive and an aqueous medium containing a polyelectrolyte for at least a portion of the polishing process involving reduction in the amount of topographic variation (height differential) across the oxide layer on the substrate.