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    CARBON-GRADED LAYER FOR IMPROVED ADHESION OF LOW-K DIELECTRICS TO SILICON SUBSTRATES
    1.
    发明申请
    CARBON-GRADED LAYER FOR IMPROVED ADHESION OF LOW-K DIELECTRICS TO SILICON SUBSTRATES 审中-公开
    用于改善低介电常数硅基底粘附的碳分层

    公开(公告)号：WO03009380A3

    公开(公告)日：2003-08-07

    申请号：PCT/GB0201370

    申请日：2002-03-21

    Applicant: IBM ,  IBM UK

    Inventor： CONTI RICHARD ,  DEV PRAKASH ,  DOBUZINSKY DAVID MARK ,  EDELSTEIN DANIEL CHARLES ,  LEE GILL ,  LOW KIA-SENG ,  SHAFER PADRAIC ,  SIMPSON ALEXANDER ,  WRSCHKA PETER

    IPC: H01L21/28 ,  H01L21/316 ,  H01L23/532 ,  H01L29/51

    CPC classification number: H01L21/28185 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/28194 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3.3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.

    Abstract translation: 公开了一种用于在衬底上方具有碳渐变层的绝缘体层的结构和方法，其中在衬底上方的每个连续碳渐变层中的碳浓度增加。 绝缘体包括具有小于3.3的介电常数的低k电介质。 碳渐变层增加了衬底和绝缘体之间以及绝缘体和导体层之间的粘附力。 该结构还可以包括碳梯度层之间的稳定界面。 更具体地说，碳缓变层包括与碳含量在约5％和20％之间的衬底相邻的第一层，在第一层之上的含碳量在约10％和30％之间的第二层，以及第三层 在碳含量在约20％和40％之间的第二层之上。

    5.
    发明专利
    未知

    公开(公告)号：DE10244570B4

    公开(公告)日：2007-08-16

    申请号：DE10244570

    申请日：2002-09-25

    Applicant: INFINEON TECHNOLOGIES AG ,  IBM

    Inventor： IGGULDEN ROY ,  ROBL WERNER ,  SHAFER PADRAIC ,  WONG KWONG HON

    IPC: H01L21/283 ,  H01L21/768 ,  H01L23/532

    Abstract: The method of filling a damascene structure with liner and tungsten involves coating damascene structure by liner providing poor step coverage, depositing tungsten by chemical vapor deposition, and performing metal isolation process. The resulting damascene structure has improved resistance, resistance spread and favorable adhesion.

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