公开(公告)号：JP2001284453A

公开(公告)日：2001-10-12

申请号：JP2001033861

申请日：2001-02-09

Applicant: IBM

Inventor： JUDETH M RUBINO ,  JAHNES CHRISTOPHER ,  LINIGER ERIC G ,  RYAN JAMES G ,  CARLOS J SANBUSETEI ,  CARDONE FRANK ,  PURUSHOTHAMAN SAMPATH ,  PHIZHIMONS JOHN A ,  STEVEN M GATES

IPC: C22F1/10 ,  C22C19/00 ,  C22F1/00 ,  H01L21/28 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/76 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a low dielectric barrier with a superior diffusion characteristic for copper and adhesion, on a copper conductor. SOLUTION: A method comprises; 1) preparing a substrate having a copper conductor, 2) putting a metal alloy film including phosphor or boron as a protective layer, on the copper conductor, 3) carrying out the first annealing process to diffuse a metal alloy including phosphor or boron into 2-4 atom layers at least, on the top of the copper conductor, then 4) putting a dielectric film with low dielectric constant on the metal alloy film including phosphor or boron, and 5) carrying out the second annealing process. The obtained structure has a double layer barrier which includes the metal alloy film including phosphor or boron on the copper conductor and the dielectric material film on the metal alloy film, and shows superior barrier and adhesive characteristics for the copper conductor.