公开(公告)号：JP2001267356A

公开(公告)日：2001-09-28

申请号：JP2001032285

申请日：2001-02-08

Applicant: IBM

Inventor： CARLOS J SAMUBUSETTEI ,  EDELSTEIN DANIEL C ,  JOHN G GAUDEIERO ,  JUDETH M RUBINO ,  GEORGE WALKER

IPC: H05K3/34 ,  C23C18/16 ,  H01L21/60 ,  H01L23/12 ,  H01L23/485 ,  H01L23/532 ,  H05K3/24 ,  H05K13/06

Abstract: PROBLEM TO BE SOLVED: TO provide a method for preparing an electrically connected copper pad having superior diffusing barrier characteristics and bonding characteristic. SOLUTION: The method for preparing an electrically connecting conductive pad comprises the steps of first preparing a copper pad surface 14 cleaned by an acid solution, than adhering a protective layer of a phosphorus or a boron-containing metal alloy to the surface of the pad, and then adhering an adhesive layer 18 of a noble metal onto the protective layer. In this case, a suitable thickness of the protective layer is in the range of 1,000 to about 10,000 Åor preferably about 3,000 to about 7,000 Å. The adhesive layer is formed of the noble metal, such as Au, Pt, Pd, Ag or the like and can be formed into a thickness of about 500 to about 4,000 Å or preferably about 1,000 to about 2,000 Å. Or before electrolessly adhering of the protective layer, a Pd nucleating layer may be adhered between the surface of the copper conductive pad and the protective layer.

公开(公告)号：JP2001284453A

公开(公告)日：2001-10-12

申请号：JP2001033861

申请日：2001-02-09

Applicant: IBM

Inventor： JUDETH M RUBINO ,  JAHNES CHRISTOPHER ,  LINIGER ERIC G ,  RYAN JAMES G ,  CARLOS J SANBUSETEI ,  CARDONE FRANK ,  PURUSHOTHAMAN SAMPATH ,  PHIZHIMONS JOHN A ,  STEVEN M GATES

IPC: C22F1/10 ,  C22C19/00 ,  C22F1/00 ,  H01L21/28 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/76 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a low dielectric barrier with a superior diffusion characteristic for copper and adhesion, on a copper conductor. SOLUTION: A method comprises; 1) preparing a substrate having a copper conductor, 2) putting a metal alloy film including phosphor or boron as a protective layer, on the copper conductor, 3) carrying out the first annealing process to diffuse a metal alloy including phosphor or boron into 2-4 atom layers at least, on the top of the copper conductor, then 4) putting a dielectric film with low dielectric constant on the metal alloy film including phosphor or boron, and 5) carrying out the second annealing process. The obtained structure has a double layer barrier which includes the metal alloy film including phosphor or boron on the copper conductor and the dielectric material film on the metal alloy film, and shows superior barrier and adhesive characteristics for the copper conductor.