公开(公告)号：GB2600338A

公开(公告)日：2022-04-27

申请号：GB202201027

申请日：2020-07-03

Applicant: IBM

Inventor： STUART SIEG ,  DANIEL JAMES DECHENE ,  ERIC MILLER

IPC: H01L21/02

Abstract: A method of forming a semiconductor structure includes forming a nanosheet stack including alternating layers of a sacrificial material and a channel material over a substrate, the layers of channel material providing nanosheet channels for one or more nanosheet field-effect transistors. The method also includes forming a hard mask stack over the nanosheet stack, and forming a patterning layer over the hard mask stack. The method further includes patterning a lithographic mask over the patterning layer, the lithographic mask defining (i) one or more first regions for direct printing of one or more fins of a first width in the nanosheet stack and the substrate and (ii) one or more second regions for setting the spacing between two or more fins of a second width in the nanosheet stack and the substrate using self-aligned double patterning. The second width is less than the first width.

公开(公告)号：GB2556224B

公开(公告)日：2019-10-30

申请号：GB201720310

申请日：2016-05-06

Applicant: IBM

Inventor： SIVANANDA KANAKASABAPATHY ,  FEE LI LIE ,  GAURI KARVE ,  SOON-CHEON SEO ,  STUART SIEG ,  HONG HE ,  DERRICK LIU ,  BRUCE DORIS

IPC: H01L21/336 ,  H01L29/78

Abstract: A semiconductor structure is provided that includes a semiconductor fin portion having an end wall and extending upward from a substrate. A gate structure straddles a portion of the semiconductor fin portion. A first set of gate spacers is located on opposing sidewall surfaces of the gate structure; and a second set of gate spacers is located on sidewalls of the first set of gate spacers. One gate spacer of the second set of gate spacers has a lower portion that directly contacts the end wall of the semiconductor fin portion.

公开(公告)号：GB2556224A

公开(公告)日：2018-05-23

申请号：GB201720310

申请日：2016-05-06

Applicant: IBM

Inventor： SIVANANDA KANAKASABAPATHY ,  FEE LI LIE ,  GAURI KARVE ,  SOON-CHEON SEO ,  STUART SIEG ,  HONG HE ,  DERRICK LIU ,  BRUCE DORIS

IPC: H01L29/66 ,  H01L29/78

Abstract: A semiconductor structure is provided that includes a semiconductor fin portion (14P) having an end wall (15W) and extending upward from a substrate (10). A gate structure (16) straddles a portion of the semiconductor fin portion (14P). A first set of gate spacers (24P/50P) is located on opposing sidewall surfaces of the gate structure (16L/16R); and a second set of gate spacers (32P) is located on sidewalls of the first set of gate spacers (24P/50P). One gate spacer of the second set of spacers (32P) has a lower portion that directly contacts the end wall (15W) of the semiconductor fin portion (14P).