公开(公告)号：GB2549621A

公开(公告)日：2017-10-25

申请号：GB201706263

申请日：2016-01-04

Applicant: IBM

Inventor： HONG HE ,  JUNLI WANG ,  CHIH-CHAO YANG ,  JUNTAO LI

IPC: H01L21/8234 ,  H01L21/28

Abstract: A method of fabricating a replacement metal gate in a transistor device, a fin field effect transistor (finFET), and a method of fabricating a finFET device with the replacement metal gate are described. The method of fabricating the replacement metal gate includes forming a dummy gate structure (140) over a substrate (110), the dummy gate structure (140) being surrounded by an insulating layer (120), and removing the dummy gate structure (140) so as to expose a trench (121) within the insulating layer (120). The method also includes conformally depositing a dielectric material layer (160) and a work function metal layer (170) over the insulating layer (120) and in the trench (121) and removing the dielectric material layer (160) and the work function metal layer (170) from a tip surface of the insulating layer (120), recessing the work function metal layer (170) below a top of the trench (121), and selectively forming a gate metal (190) only on exposed surfaces of the work function metal layer (170).

公开(公告)号：GB2556224B

公开(公告)日：2019-10-30

申请号：GB201720310

申请日：2016-05-06

Applicant: IBM

Inventor： SIVANANDA KANAKASABAPATHY ,  FEE LI LIE ,  GAURI KARVE ,  SOON-CHEON SEO ,  STUART SIEG ,  HONG HE ,  DERRICK LIU ,  BRUCE DORIS

IPC: H01L21/336 ,  H01L29/78

Abstract: A semiconductor structure is provided that includes a semiconductor fin portion having an end wall and extending upward from a substrate. A gate structure straddles a portion of the semiconductor fin portion. A first set of gate spacers is located on opposing sidewall surfaces of the gate structure; and a second set of gate spacers is located on sidewalls of the first set of gate spacers. One gate spacer of the second set of gate spacers has a lower portion that directly contacts the end wall of the semiconductor fin portion.

公开(公告)号：GB2556224A

公开(公告)日：2018-05-23

申请号：GB201720310

申请日：2016-05-06

Applicant: IBM

Inventor： SIVANANDA KANAKASABAPATHY ,  FEE LI LIE ,  GAURI KARVE ,  SOON-CHEON SEO ,  STUART SIEG ,  HONG HE ,  DERRICK LIU ,  BRUCE DORIS

IPC: H01L29/66 ,  H01L29/78

Abstract: A semiconductor structure is provided that includes a semiconductor fin portion (14P) having an end wall (15W) and extending upward from a substrate (10). A gate structure (16) straddles a portion of the semiconductor fin portion (14P). A first set of gate spacers (24P/50P) is located on opposing sidewall surfaces of the gate structure (16L/16R); and a second set of gate spacers (32P) is located on sidewalls of the first set of gate spacers (24P/50P). One gate spacer of the second set of spacers (32P) has a lower portion that directly contacts the end wall (15W) of the semiconductor fin portion (14P).

公开(公告)号：GB2549621B

公开(公告)日：2018-06-13

申请号：GB201706263

申请日：2016-01-04

Applicant: IBM

Inventor： HONG HE ,  JUNLI WANG ,  CHIH-CHAO YANG ,  JUNTAO LI

IPC: H01L21/8234 ,  H01L21/28

Abstract: A method of fabricating a replacement metal gate in a transistor device, a fin field effect transistor (finFET), and method of fabricating a finFET device with the replacement metal gate are described. The method of fabricating the replacement metal gate includes forming a dummy gate structure over a substrate, the dummy gate structure being surrounded by an insulating layer, and removing the dummy gate structure so as to expose a trench within the insulating layer. The method also includes conformally depositing a dielectric material layer and a work function metal layer over a the insulating layer and in the trench and removing the dielectric material layer and the work function metal layer from a tip surface of the insulating layer, recessing the work function metal layer below a top of the trench, and selectively forming a gate metal only on exposed surfaces of the work function metal layer