公开(公告)号：JP2003338517A

公开(公告)日：2003-11-28

申请号：JP2003136494

申请日：2003-05-14

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーション

Inventor： COPELAND BRUCE ANTHONY ,  GORRELL REBECCA YUNG ,  TAKACS MARK A ,  TRAVIS JR KENNETH J ,  WANG JUN ,  WIGGINS LOVELL B

IPC: H01L21/60 ,  H01L23/485 ,  H05K3/24 ,  H05K3/34

CPC classification number: H01L24/11 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13171 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/351 ,  H05K3/244 ,  H05K3/3463 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2224/13099 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a lead-free solder alloy on an electronic substrate.
SOLUTION: A metal stack which comprises a thick nickel barrier layer 16 and a copper layer 18 formed on the nickel barrier layer 16 is evaporated or plated with silver and tin (20). By being heated to a prescribed temperature, the copper, tin, and silver form a lead-less tin-silver-copper alloy 22.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种在电子基板上形成无铅焊料合金的方法。 解决方案：包含形成在镍阻挡层16上的厚镍阻挡层16和铜层18的金属堆叠被银和锡（20）蒸发或镀覆。 通过加热到规定的温度，铜，锡和银形成无铅锡 - 银 - 铜 - 铜合金22.版权所有（C）2004，JPO

公开(公告)号：CA1308817C

公开(公告)日：1992-10-13

申请号：CA593138

申请日：1989-03-08

Applicant: IBM

Inventor： BAISE ARNOLD I ,  CASEY JON A ,  CLARKE DAVID R ,  DIVAKARUNI RENUKA S ,  DUNKEL WERNER E ,  HUMENIK JAMES N ,  KANDETZKE STEVEN M ,  KIRBY DANIEL P ,  KNICKERBOCKER JOHN U ,  MATTS AMY T ,  TAKACS MARK A ,  WIGGINS LOVELL B

IPC: H05K1/03 ,  C04B41/48 ,  C04B41/49 ,  H01L21/48 ,  H01L23/08 ,  H01L23/538 ,  H05K3/40 ,  H01L23/14

Abstract: The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength. FI9-86-046