公开(公告)号：CA1184149A

公开(公告)日：1985-03-19

申请号：CA407313

申请日：1982-07-15

Applicant: IBM

Inventor： BAISE ARNOLD I ,  BURNS JOHN M ,  SACHDEV HARBANS S

IPC: C23C14/02 ,  B05D7/24 ,  C08F2/52 ,  C08F30/02 ,  C08J7/00 ,  C23C14/04 ,  H01L21/312 ,  C23C11/00

Abstract: The adhesion of organic resins to substrate materials is increased by depositing on the substrate a coating of a plasma polymerized unsaturated organophosphine.

公开(公告)号：DE3382653T2

公开(公告)日：1993-07-15

申请号：DE3382653

申请日：1983-11-17

Applicant: IBM

Inventor： BAISE ARNOLD I ,  WU ANTHONY W

IPC: C07D241/38 ,  B32B27/00 ,  C07D241/36 ,  C07D241/42 ,  C07D241/44 ,  C08G73/00 ,  C08G73/06 ,  H01B3/30 ,  H01L21/312 ,  H01L21/47

Abstract: 57 An insulating or masking film for semiconductor devices formed by curing applied coatings of biphenylene end-capped quinoxaline polymers.The synthesis of such polymers comprises the step of end-capping quinoxaline prepolymers with biphenylene groups by reacting terminal ortho-diamines with 1,2-diketones.

公开(公告)号：DE3382653D1

公开(公告)日：1993-03-04

申请号：DE3382653

申请日：1983-11-17

Applicant: IBM

Inventor： BAISE ARNOLD I ,  WU ANTHONY W

IPC: C07D241/38 ,  B32B27/00 ,  C07D241/36 ,  C07D241/42 ,  C07D241/44 ,  C08G73/00 ,  C08G73/06 ,  H01B3/30 ,  H01L21/312 ,  H01L21/47

Abstract: 57 An insulating or masking film for semiconductor devices formed by curing applied coatings of biphenylene end-capped quinoxaline polymers.The synthesis of such polymers comprises the step of end-capping quinoxaline prepolymers with biphenylene groups by reacting terminal ortho-diamines with 1,2-diketones.

公开(公告)号：CA1308817C

公开(公告)日：1992-10-13

申请号：CA593138

申请日：1989-03-08

Applicant: IBM

Inventor： BAISE ARNOLD I ,  CASEY JON A ,  CLARKE DAVID R ,  DIVAKARUNI RENUKA S ,  DUNKEL WERNER E ,  HUMENIK JAMES N ,  KANDETZKE STEVEN M ,  KIRBY DANIEL P ,  KNICKERBOCKER JOHN U ,  MATTS AMY T ,  TAKACS MARK A ,  WIGGINS LOVELL B

IPC: H05K1/03 ,  C04B41/48 ,  C04B41/49 ,  H01L21/48 ,  H01L23/08 ,  H01L23/538 ,  H05K3/40 ,  H01L23/14

Abstract: The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength. FI9-86-046